GB2038092A - Reducing the switching time of semiconductor devices by neutron irradiation - Google Patents
Reducing the switching time of semiconductor devices by neutron irradiation Download PDFInfo
- Publication number
- GB2038092A GB2038092A GB7944034A GB7944034A GB2038092A GB 2038092 A GB2038092 A GB 2038092A GB 7944034 A GB7944034 A GB 7944034A GB 7944034 A GB7944034 A GB 7944034A GB 2038092 A GB2038092 A GB 2038092A
- Authority
- GB
- United Kingdom
- Prior art keywords
- irradiation
- annealing
- switching time
- neutron
- thyristors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 230000005855 radiation Effects 0.000 claims description 30
- 238000000137 annealing Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 19
- 238000003860 storage Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000004992 fission Effects 0.000 description 16
- 238000011084 recovery Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- JFALSRSLKYAFGM-OIOBTWANSA-N uranium-235 Chemical compound [235U] JFALSRSLKYAFGM-OIOBTWANSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/165—Transmutation doping
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/972,302 US4240844A (en) | 1978-12-22 | 1978-12-22 | Reducing the switching time of semiconductor devices by neutron irradiation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2038092A true GB2038092A (en) | 1980-07-16 |
Family
ID=25519487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7944034A Withdrawn GB2038092A (en) | 1978-12-22 | 1979-12-21 | Reducing the switching time of semiconductor devices by neutron irradiation |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4240844A (fr) |
| JP (1) | JPS5588338A (fr) |
| BE (1) | BE880836A (fr) |
| BR (1) | BR7908365A (fr) |
| CA (1) | CA1131368A (fr) |
| DE (1) | DE2951925A1 (fr) |
| FR (1) | FR2445021A1 (fr) |
| GB (1) | GB2038092A (fr) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4328610A (en) * | 1980-04-25 | 1982-05-11 | Burroughs Corporation | Method of reducing alpha-particle induced errors in an integrated circuit |
| US4311534A (en) * | 1980-06-27 | 1982-01-19 | Westinghouse Electric Corp. | Reducing the reverse recovery charge of thyristors by nuclear irradiation |
| JPS5950531A (ja) * | 1982-09-16 | 1984-03-23 | Toshiba Corp | 半導体装置及びその製造方法 |
| JPS6068621A (ja) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | 半導体装置の製造方法 |
| US4684413A (en) * | 1985-10-07 | 1987-08-04 | Rca Corporation | Method for increasing the switching speed of a semiconductor device by neutron irradiation |
| DE3714357C2 (de) * | 1986-04-30 | 1994-02-03 | Toshiba Ceramics Co | Siliciumwafer und Verfahren zu dessen Herstellung und Siliziumwafer-Auswahleinrichtung |
| DE3639835A1 (de) * | 1986-11-21 | 1987-04-30 | Corneliu Dipl Phys Protop | Verfahren zur herstellung von hochgeschwindigkeitshalbleitern |
| EP0398120B1 (fr) * | 1989-05-18 | 1993-10-13 | Asea Brown Boveri Ag | Dispositif semi-conducteur |
| US5784424A (en) * | 1994-09-30 | 1998-07-21 | The United States Of America As Represented By The United States Department Of Energy | System for studying a sample of material using a heavy ion induced mass spectrometer source |
| US9312133B2 (en) | 2011-08-25 | 2016-04-12 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
| EP2748844A4 (fr) * | 2011-08-25 | 2015-11-04 | Aeroflex Colorado Springs Inc | Structure de tranche pour la fabrication de circuits intégrés électroniques |
| US9396947B2 (en) | 2011-08-25 | 2016-07-19 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
| US9378956B2 (en) | 2011-08-25 | 2016-06-28 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
| US9378955B2 (en) | 2011-08-25 | 2016-06-28 | Aeroflex Colorado Springs Inc. | Wafer structure for electronic integrated circuit manufacturing |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1948884B2 (de) * | 1969-09-27 | 1971-09-30 | Verfahren zum beseitigen von inversionsschichten | |
| US3769693A (en) * | 1971-07-16 | 1973-11-06 | Martin Marietta Corp | Process for preparing nuclear hardened semiconductor and microelectronic devices |
| US3872493A (en) * | 1972-08-25 | 1975-03-18 | Westinghouse Electric Corp | Selective irradiation of junctioned semiconductor devices |
| US3840887A (en) * | 1972-08-25 | 1974-10-08 | Westinghouse Electric Corp | Selective irradiation of gated semiconductor devices to control gate sensitivity |
| US3852612A (en) * | 1972-08-31 | 1974-12-03 | Westinghouse Electric Corp | Selective low level irradiation to improve blocking voltage yield of junctioned semiconductors |
| US3881963A (en) * | 1973-01-18 | 1975-05-06 | Westinghouse Electric Corp | Irradiation for fast switching thyristors |
| US3881964A (en) * | 1973-03-05 | 1975-05-06 | Westinghouse Electric Corp | Annealing to control gate sensitivity of gated semiconductor devices |
| US3809582A (en) * | 1973-03-08 | 1974-05-07 | Westinghouse Electric Corp | Irradiation for fast recovery of high power junction diodes |
| US3888701A (en) * | 1973-03-09 | 1975-06-10 | Westinghouse Electric Corp | Tailoring reverse recovery time and forward voltage drop characteristics of a diode by irradiation and annealing |
| US3933527A (en) * | 1973-03-09 | 1976-01-20 | Westinghouse Electric Corporation | Fine tuning power diodes with irradiation |
| US3877997A (en) * | 1973-03-20 | 1975-04-15 | Westinghouse Electric Corp | Selective irradiation for fast switching thyristor with low forward voltage drop |
| US4056408A (en) * | 1976-03-17 | 1977-11-01 | Westinghouse Electric Corporation | Reducing the switching time of semiconductor devices by nuclear irradiation |
| US4076555A (en) * | 1976-05-17 | 1978-02-28 | Westinghouse Electric Corporation | Irradiation for rapid turn-off reverse blocking diode thyristor |
| US4135951A (en) * | 1977-06-13 | 1979-01-23 | Monsanto Company | Annealing method to increase minority carrier life-time for neutron transmutation doped semiconductor materials |
-
1978
- 1978-12-22 US US05/972,302 patent/US4240844A/en not_active Expired - Lifetime
-
1979
- 1979-12-13 CA CA341,867A patent/CA1131368A/fr not_active Expired
- 1979-12-20 BR BR7908365A patent/BR7908365A/pt unknown
- 1979-12-20 FR FR7931303A patent/FR2445021A1/fr not_active Withdrawn
- 1979-12-21 DE DE19792951925 patent/DE2951925A1/de not_active Withdrawn
- 1979-12-21 GB GB7944034A patent/GB2038092A/en not_active Withdrawn
- 1979-12-21 JP JP16581479A patent/JPS5588338A/ja active Pending
- 1979-12-21 BE BE0/198730A patent/BE880836A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA1131368A (fr) | 1982-09-07 |
| BR7908365A (pt) | 1980-08-26 |
| US4240844A (en) | 1980-12-23 |
| BE880836A (fr) | 1980-06-23 |
| DE2951925A1 (de) | 1980-07-10 |
| FR2445021A1 (fr) | 1980-07-18 |
| JPS5588338A (en) | 1980-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |