FR2441271A1 - Procede de metallisation de dispositifs semi-conducteurs - Google Patents

Procede de metallisation de dispositifs semi-conducteurs

Info

Publication number
FR2441271A1
FR2441271A1 FR7927649A FR7927649A FR2441271A1 FR 2441271 A1 FR2441271 A1 FR 2441271A1 FR 7927649 A FR7927649 A FR 7927649A FR 7927649 A FR7927649 A FR 7927649A FR 2441271 A1 FR2441271 A1 FR 2441271A1
Authority
FR
France
Prior art keywords
tablets
semiconductor devices
hydrogen
metallizing
metallizing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7927649A
Other languages
English (en)
Other versions
FR2441271B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2441271A1 publication Critical patent/FR2441271A1/fr
Application granted granted Critical
Publication of FR2441271B1 publication Critical patent/FR2441271B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PROCEDE ET EQUIPEMENT DE METALLISATION DE DISPOSITIFS SEMI-CONDUCTEURS AU SILICIUM, NOTAMMENT DES CIRCUITS INTEGRES, PAR UN ALLIAGE D'ALUMINIUM ET DE SILICIUM. SELON L'INVENTION, LES PASTILLES 11 SONT REVETUES PAR DECOMPOSITION THERMIQUE DE VAPEURS D'ALKYLALUMINIUM ET DE SILANE A TEMPERATURE ELEVEE ET SOUS PRESSION REDUITE. LA TEMPERATURE DU FOUR 13 EST MAINTENUE, DE PREFERENCE, ENTRE 300 ET 400C. LES COUCHES DE MEILLEURES QUALITES SONT OBTENUES AVEC LE TRIISOBUTYLALUMINIUM, L'HYDRURE DE DIISOBUTYLALUMINIUM OU LEURS MELANGES. CE PROCEDE ELIMINE LE TRAITEMENT PREALABLE DANS UN PLASMA D'HYDROGENE ET LE RECUIT ULTERIEUR DES PASTILLES, COMME L'EXIGENT LES METHODES CLASSIQUES. LA QUALITE DE RECUIT, OBTENU ICI PENDANT LE DEPOT, PEUT ETRE AMELIOREE PAR L'ADDITION D'HYDROGENE.
FR7927649A 1978-11-09 1979-11-09 Procede de metallisation de dispositifs semi-conducteurs Granted FR2441271A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7843914A GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices

Publications (2)

Publication Number Publication Date
FR2441271A1 true FR2441271A1 (fr) 1980-06-06
FR2441271B1 FR2441271B1 (fr) 1983-06-17

Family

ID=10500922

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7927649A Granted FR2441271A1 (fr) 1978-11-09 1979-11-09 Procede de metallisation de dispositifs semi-conducteurs

Country Status (5)

Country Link
JP (1) JPS5567135A (fr)
DE (1) DE2944500A1 (fr)
FR (1) FR2441271A1 (fr)
GB (1) GB2041983B (fr)
IT (1) IT1193328B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469467A1 (fr) * 1979-11-08 1981-05-22 Itt Procede de metallisation de dispositifs a semi-conducteurs

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948952B2 (ja) * 1981-03-23 1984-11-29 富士通株式会社 金属薄膜の形成方法
US4488506A (en) * 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
EP0221156B1 (fr) * 1985-05-03 1989-10-11 AT&T Corp. Procede de fabrication d'un dispositif comprenant une couche de circuit en aluminium
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
DE3783405T2 (de) * 1986-08-19 1993-08-05 Fujitsu Ltd Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben.
JPS6324070A (ja) * 1987-04-24 1988-02-01 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
JPH01198475A (ja) * 1988-02-02 1989-08-10 Anelva Corp 薄膜作製方法
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
JP2544185B2 (ja) * 1988-08-09 1996-10-16 アネルバ株式会社 薄膜作製装置および方法
JP2781220B2 (ja) * 1989-09-09 1998-07-30 キヤノン株式会社 堆積膜形成法
JP2781219B2 (ja) * 1989-09-09 1998-07-30 キヤノン株式会社 堆積膜形成法
JP2801285B2 (ja) * 1989-09-26 1998-09-21 キヤノン株式会社 堆積膜形成法
JP2721020B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JP2721021B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
EP0498580A1 (fr) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Méthode dépôt d'un film métallique contenant de l'aluminium en utilisant un halide d'alkylaluminium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449150A (en) * 1965-03-31 1969-06-10 Continental Oil Co Coating surfaces with aluminum
DE2151052A1 (de) * 1970-10-14 1972-06-08 Motorola Inc Verfahren und Vorrichtung zur Bildung einer Silicium-Aluminium-Schicht auf einem Siliciumtraeger
GB1495924A (en) * 1975-08-25 1977-12-21 Ibm Chemical vapour deposition of films

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1122171B (de) * 1955-11-10 1962-01-18 Robert Mueller Verfahren zur Herstellung elektrischer Kondensatoren, die aus einem Isolationsmaterial mit darauf haftenden, duennen Aluminiumbelaegen bestehen
GB1070396A (en) * 1964-08-05 1967-06-01 Union Carbide Corp Linde Divis Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
US3620837A (en) * 1968-09-16 1971-11-16 Ibm Reliability of aluminum and aluminum alloy lands

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3449150A (en) * 1965-03-31 1969-06-10 Continental Oil Co Coating surfaces with aluminum
DE2151052A1 (de) * 1970-10-14 1972-06-08 Motorola Inc Verfahren und Vorrichtung zur Bildung einer Silicium-Aluminium-Schicht auf einem Siliciumtraeger
GB1495924A (en) * 1975-08-25 1977-12-21 Ibm Chemical vapour deposition of films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2469467A1 (fr) * 1979-11-08 1981-05-22 Itt Procede de metallisation de dispositifs a semi-conducteurs

Also Published As

Publication number Publication date
FR2441271B1 (fr) 1983-06-17
IT7927119A0 (it) 1979-11-08
DE2944500A1 (de) 1980-05-29
GB2041983B (en) 1982-12-01
GB2041983A (en) 1980-09-17
JPS5567135A (en) 1980-05-21
IT1193328B (it) 1988-06-15

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