IT1193328B - Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori - Google Patents

Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori

Info

Publication number
IT1193328B
IT1193328B IT27119/79A IT2711979A IT1193328B IT 1193328 B IT1193328 B IT 1193328B IT 27119/79 A IT27119/79 A IT 27119/79A IT 2711979 A IT2711979 A IT 2711979A IT 1193328 B IT1193328 B IT 1193328B
Authority
IT
Italy
Prior art keywords
metallization
related apparatus
semiconductive devices
semiconductive
devices
Prior art date
Application number
IT27119/79A
Other languages
English (en)
Other versions
IT7927119A0 (it
Inventor
Rudolf August Herbert Heinecke
Ronald Carl Stern
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of IT7927119A0 publication Critical patent/IT7927119A0/it
Application granted granted Critical
Publication of IT1193328B publication Critical patent/IT1193328B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
IT27119/79A 1978-11-09 1979-11-08 Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori IT1193328B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7843914A GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices

Publications (2)

Publication Number Publication Date
IT7927119A0 IT7927119A0 (it) 1979-11-08
IT1193328B true IT1193328B (it) 1988-06-15

Family

ID=10500922

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27119/79A IT1193328B (it) 1978-11-09 1979-11-08 Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori

Country Status (5)

Country Link
JP (1) JPS5567135A (it)
DE (1) DE2944500A1 (it)
FR (1) FR2441271A1 (it)
GB (1) GB2041983B (it)
IT (1) IT1193328B (it)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040693A1 (de) * 1979-11-08 1981-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur metallisierung von halbleiterbauelementen
JPS5948952B2 (ja) * 1981-03-23 1984-11-29 富士通株式会社 金属薄膜の形成方法
US4488506A (en) * 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
EP0221156B1 (en) * 1985-05-03 1989-10-11 AT&T Corp. Method of making a device comprising a patterned aluminum layer
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
DE3783405T2 (de) * 1986-08-19 1993-08-05 Fujitsu Ltd Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben.
JPS6324070A (ja) * 1987-04-24 1988-02-01 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
JPH01198475A (ja) * 1988-02-02 1989-08-10 Anelva Corp 薄膜作製方法
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
JP2544185B2 (ja) * 1988-08-09 1996-10-16 アネルバ株式会社 薄膜作製装置および方法
JP2781220B2 (ja) * 1989-09-09 1998-07-30 キヤノン株式会社 堆積膜形成法
JP2781219B2 (ja) * 1989-09-09 1998-07-30 キヤノン株式会社 堆積膜形成法
JP2801285B2 (ja) * 1989-09-26 1998-09-21 キヤノン株式会社 堆積膜形成法
JP2721020B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JP2721021B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1122171B (de) * 1955-11-10 1962-01-18 Robert Mueller Verfahren zur Herstellung elektrischer Kondensatoren, die aus einem Isolationsmaterial mit darauf haftenden, duennen Aluminiumbelaegen bestehen
GB1070396A (en) * 1964-08-05 1967-06-01 Union Carbide Corp Linde Divis Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
US3449150A (en) * 1965-03-31 1969-06-10 Continental Oil Co Coating surfaces with aluminum
US3620837A (en) * 1968-09-16 1971-11-16 Ibm Reliability of aluminum and aluminum alloy lands
DE2151052A1 (de) * 1970-10-14 1972-06-08 Motorola Inc Verfahren und Vorrichtung zur Bildung einer Silicium-Aluminium-Schicht auf einem Siliciumtraeger
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si

Also Published As

Publication number Publication date
FR2441271B1 (it) 1983-06-17
IT7927119A0 (it) 1979-11-08
DE2944500A1 (de) 1980-05-29
GB2041983B (en) 1982-12-01
FR2441271A1 (fr) 1980-06-06
GB2041983A (en) 1980-09-17
JPS5567135A (en) 1980-05-21

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