JPS5567135A - Method of forming metallic film of semiconductor device - Google Patents

Method of forming metallic film of semiconductor device

Info

Publication number
JPS5567135A
JPS5567135A JP14455379A JP14455379A JPS5567135A JP S5567135 A JPS5567135 A JP S5567135A JP 14455379 A JP14455379 A JP 14455379A JP 14455379 A JP14455379 A JP 14455379A JP S5567135 A JPS5567135 A JP S5567135A
Authority
JP
Japan
Prior art keywords
semiconductor device
metallic film
forming metallic
forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14455379A
Other languages
English (en)
Inventor
Oogasuto Haabaato Hei Rudorufu
Kaaru Sutaan Ronarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS5567135A publication Critical patent/JPS5567135A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP14455379A 1978-11-09 1979-11-09 Method of forming metallic film of semiconductor device Pending JPS5567135A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7843914A GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices

Publications (1)

Publication Number Publication Date
JPS5567135A true JPS5567135A (en) 1980-05-21

Family

ID=10500922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14455379A Pending JPS5567135A (en) 1978-11-09 1979-11-09 Method of forming metallic film of semiconductor device

Country Status (5)

Country Link
JP (1) JPS5567135A (ja)
DE (1) DE2944500A1 (ja)
FR (1) FR2441271A1 (ja)
GB (1) GB2041983B (ja)
IT (1) IT1193328B (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
JPS6324070A (ja) * 1987-04-24 1988-02-01 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
JPH01198475A (ja) * 1988-02-02 1989-08-10 Anelva Corp 薄膜作製方法
JPH0247263A (ja) * 1988-08-09 1990-02-16 Anelva Corp 薄膜作製装置および方法
JPH03111567A (ja) * 1989-09-26 1991-05-13 Canon Inc 堆積膜形成法
JPH03122279A (ja) * 1989-09-09 1991-05-24 Canon Inc 堆積膜形成法
JPH03122278A (ja) * 1989-09-09 1991-05-24 Canon Inc 堆積膜形成法
JPH03183770A (ja) * 1989-09-26 1991-08-09 Canon Inc 堆積膜形成法
JPH03183771A (ja) * 1989-09-26 1991-08-09 Canon Inc 堆積膜形成法
JPH03202471A (ja) * 1989-09-26 1991-09-04 Canon Inc 堆積膜形成法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040693A1 (de) * 1979-11-08 1981-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur metallisierung von halbleiterbauelementen
JPS5948952B2 (ja) * 1981-03-23 1984-11-29 富士通株式会社 金属薄膜の形成方法
US4488506A (en) * 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
EP0221156B1 (en) * 1985-05-03 1989-10-11 AT&T Corp. Method of making a device comprising a patterned aluminum layer
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
DE3783405T2 (de) * 1986-08-19 1993-08-05 Fujitsu Ltd Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben.
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1122171B (de) * 1955-11-10 1962-01-18 Robert Mueller Verfahren zur Herstellung elektrischer Kondensatoren, die aus einem Isolationsmaterial mit darauf haftenden, duennen Aluminiumbelaegen bestehen
GB1070396A (en) * 1964-08-05 1967-06-01 Union Carbide Corp Linde Divis Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
US3449150A (en) * 1965-03-31 1969-06-10 Continental Oil Co Coating surfaces with aluminum
US3620837A (en) * 1968-09-16 1971-11-16 Ibm Reliability of aluminum and aluminum alloy lands
DE2151052A1 (de) * 1970-10-14 1972-06-08 Motorola Inc Verfahren und Vorrichtung zur Bildung einer Silicium-Aluminium-Schicht auf einem Siliciumtraeger
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
JPS6324070A (ja) * 1987-04-24 1988-02-01 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
JPH01198475A (ja) * 1988-02-02 1989-08-10 Anelva Corp 薄膜作製方法
JPH0247263A (ja) * 1988-08-09 1990-02-16 Anelva Corp 薄膜作製装置および方法
JPH03122279A (ja) * 1989-09-09 1991-05-24 Canon Inc 堆積膜形成法
JPH03122278A (ja) * 1989-09-09 1991-05-24 Canon Inc 堆積膜形成法
JPH03111567A (ja) * 1989-09-26 1991-05-13 Canon Inc 堆積膜形成法
JPH03183770A (ja) * 1989-09-26 1991-08-09 Canon Inc 堆積膜形成法
JPH03183771A (ja) * 1989-09-26 1991-08-09 Canon Inc 堆積膜形成法
JPH03202471A (ja) * 1989-09-26 1991-09-04 Canon Inc 堆積膜形成法

Also Published As

Publication number Publication date
FR2441271B1 (ja) 1983-06-17
IT7927119A0 (it) 1979-11-08
DE2944500A1 (de) 1980-05-29
GB2041983B (en) 1982-12-01
FR2441271A1 (fr) 1980-06-06
GB2041983A (en) 1980-09-17
IT1193328B (it) 1988-06-15

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