GB2041983B - Metallising semiconductor devices - Google Patents

Metallising semiconductor devices

Info

Publication number
GB2041983B
GB2041983B GB7843914A GB7843914A GB2041983B GB 2041983 B GB2041983 B GB 2041983B GB 7843914 A GB7843914 A GB 7843914A GB 7843914 A GB7843914 A GB 7843914A GB 2041983 B GB2041983 B GB 2041983B
Authority
GB
United Kingdom
Prior art keywords
metallising
semiconductor devices
semiconductor
devices
metallising semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7843914A
Other languages
English (en)
Other versions
GB2041983A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB7843914A priority Critical patent/GB2041983B/en
Priority to DE19792944500 priority patent/DE2944500A1/de
Priority to GB7938793A priority patent/GB2038883B/en
Priority to IT27119/79A priority patent/IT1193328B/it
Priority to JP14455379A priority patent/JPS5567135A/ja
Priority to FR7927649A priority patent/FR2441271A1/fr
Publication of GB2041983A publication Critical patent/GB2041983A/en
Priority to US06/199,799 priority patent/US4328261A/en
Application granted granted Critical
Publication of GB2041983B publication Critical patent/GB2041983B/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB7843914A 1978-11-09 1978-11-09 Metallising semiconductor devices Expired GB2041983B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB7843914A GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices
DE19792944500 DE2944500A1 (de) 1978-11-09 1979-11-03 Verfahren zur metallisierung von halbleiterbauelementen
GB7938793A GB2038883B (en) 1978-11-09 1979-11-08 Metallizing semiconductor devices
IT27119/79A IT1193328B (it) 1978-11-09 1979-11-08 Processo e relativo apparato per la metallizzazione di dispositivi semiconduttori
JP14455379A JPS5567135A (en) 1978-11-09 1979-11-09 Method of forming metallic film of semiconductor device
FR7927649A FR2441271A1 (fr) 1978-11-09 1979-11-09 Procede de metallisation de dispositifs semi-conducteurs
US06/199,799 US4328261A (en) 1978-11-09 1980-10-23 Metallizing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7843914A GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices

Publications (2)

Publication Number Publication Date
GB2041983A GB2041983A (en) 1980-09-17
GB2041983B true GB2041983B (en) 1982-12-01

Family

ID=10500922

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7843914A Expired GB2041983B (en) 1978-11-09 1978-11-09 Metallising semiconductor devices

Country Status (5)

Country Link
JP (1) JPS5567135A (ja)
DE (1) DE2944500A1 (ja)
FR (1) FR2441271A1 (ja)
GB (1) GB2041983B (ja)
IT (1) IT1193328B (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040693A1 (de) * 1979-11-08 1981-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur metallisierung von halbleiterbauelementen
JPS5948952B2 (ja) * 1981-03-23 1984-11-29 富士通株式会社 金属薄膜の形成方法
US4488506A (en) * 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
WO1986006756A1 (en) * 1985-05-03 1986-11-20 American Telephone & Telegraph Company Method of making a device comprising a patterned aluminum layer
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
EP0256557B1 (en) * 1986-08-19 1993-01-07 Fujitsu Limited Semiconductor device having thin film wiring layer and method of forming thin wiring layer
JPS6324070A (ja) * 1987-04-24 1988-02-01 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
JPH01198475A (ja) * 1988-02-02 1989-08-10 Anelva Corp 薄膜作製方法
GB2213836B (en) * 1987-12-18 1992-08-26 Gen Electric Co Plc Vacuum deposition process
JP2544185B2 (ja) * 1988-08-09 1996-10-16 アネルバ株式会社 薄膜作製装置および方法
JP2781219B2 (ja) * 1989-09-09 1998-07-30 キヤノン株式会社 堆積膜形成法
JP2781220B2 (ja) * 1989-09-09 1998-07-30 キヤノン株式会社 堆積膜形成法
JP2721020B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JP2801285B2 (ja) * 1989-09-26 1998-09-21 キヤノン株式会社 堆積膜形成法
JP2721021B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
EP0498580A1 (en) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1122171B (de) * 1955-11-10 1962-01-18 Robert Mueller Verfahren zur Herstellung elektrischer Kondensatoren, die aus einem Isolationsmaterial mit darauf haftenden, duennen Aluminiumbelaegen bestehen
GB1070396A (en) * 1964-08-05 1967-06-01 Union Carbide Corp Linde Divis Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
US3449150A (en) * 1965-03-31 1969-06-10 Continental Oil Co Coating surfaces with aluminum
US3620837A (en) * 1968-09-16 1971-11-16 Ibm Reliability of aluminum and aluminum alloy lands
DE2151052A1 (de) * 1970-10-14 1972-06-08 Motorola Inc Verfahren und Vorrichtung zur Bildung einer Silicium-Aluminium-Schicht auf einem Siliciumtraeger
US3974003A (en) * 1975-08-25 1976-08-10 Ibm Chemical vapor deposition of dielectric films containing Al, N, and Si

Also Published As

Publication number Publication date
IT1193328B (it) 1988-06-15
JPS5567135A (en) 1980-05-21
GB2041983A (en) 1980-09-17
FR2441271A1 (fr) 1980-06-06
IT7927119A0 (it) 1979-11-08
DE2944500A1 (de) 1980-05-29
FR2441271B1 (ja) 1983-06-17

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941109