IT7922198A0 - Processo ed apparecchiatura per laproduzione di nitruro di alluminio. - Google Patents

Processo ed apparecchiatura per laproduzione di nitruro di alluminio.

Info

Publication number
IT7922198A0
IT7922198A0 IT7922198A IT2219879A IT7922198A0 IT 7922198 A0 IT7922198 A0 IT 7922198A0 IT 7922198 A IT7922198 A IT 7922198A IT 2219879 A IT2219879 A IT 2219879A IT 7922198 A0 IT7922198 A0 IT 7922198A0
Authority
IT
Italy
Prior art keywords
production
equipment
aluminum nitride
nitride
aluminum
Prior art date
Application number
IT7922198A
Other languages
English (en)
Other versions
IT1166778B (it
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT7922198A0 publication Critical patent/IT7922198A0/it
Application granted granted Critical
Publication of IT1166778B publication Critical patent/IT1166778B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/22—Sandwich processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
IT22198/79A 1978-05-15 1979-04-27 Processo ed apparecchiatura per la produzione di nitruro di alluminio IT1166778B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/905,625 US4152182A (en) 1978-05-15 1978-05-15 Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide

Publications (2)

Publication Number Publication Date
IT7922198A0 true IT7922198A0 (it) 1979-04-27
IT1166778B IT1166778B (it) 1987-05-06

Family

ID=25421169

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22198/79A IT1166778B (it) 1978-05-15 1979-04-27 Processo ed apparecchiatura per la produzione di nitruro di alluminio

Country Status (6)

Country Link
US (1) US4152182A (it)
EP (1) EP0005442B1 (it)
JP (1) JPS54155762A (it)
CA (1) CA1122859A (it)
DE (1) DE2960342D1 (it)
IT (1) IT1166778B (it)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
US4382837A (en) * 1981-06-30 1983-05-10 International Business Machines Corporation Epitaxial crystal fabrication of SiC:AlN
US4533645A (en) * 1983-08-01 1985-08-06 General Electric Company High thermal conductivity aluminum nitride ceramic body
US4537863A (en) * 1983-08-10 1985-08-27 Nippon Electric Glass Company, Ltd. Low temperature sealing composition
EP0460710B1 (en) * 1987-01-31 1994-12-07 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor and luminous element comprising it and the process of producing the same
US4911102A (en) * 1987-01-31 1990-03-27 Toyoda Gosei Co., Ltd. Process of vapor growth of gallium nitride and its apparatus
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
DE3731455A1 (de) * 1987-09-18 1989-03-30 Hoechst Ag Verfahren zur herstellung von transparenten aluminiumnitrid-folien sowie -beschichtungen aus amminsalzen des aluminiumjodids
WO1990007586A1 (en) * 1989-01-06 1990-07-12 Celestech, Inc. Improved diamond deposition cell
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
US5650361A (en) * 1995-11-21 1997-07-22 The Aerospace Corporation Low temperature photolytic deposition of aluminum nitride thin films
US5954874A (en) * 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
US6045612A (en) * 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
JP3439994B2 (ja) * 1998-07-07 2003-08-25 科学技術振興事業団 低抵抗ｎ型および低抵抗ｐ型単結晶ＡｌＮ薄膜の合成法
US6063185A (en) * 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6086672A (en) * 1998-10-09 2000-07-11 Cree, Inc. Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
JP5310257B2 (ja) * 2009-05-21 2013-10-09 株式会社リコー 窒化物結晶製造方法
JP6394170B2 (ja) * 2014-08-12 2018-09-26 Tdk株式会社 アルミナ基板

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1327707A (fr) * 1956-07-31 1963-05-24 Pechiney Prod Chimiques Sa Procédé de fabrication du nitrure d'aluminium
LU38170A1 (it) * 1959-02-13
US3128153A (en) * 1961-05-01 1964-04-07 Gen Electric Preparation of the nitrides of aluminum and gallium
NL296876A (it) * 1962-08-23
DE1289830B (de) * 1965-08-05 1969-02-27 Siemens Ag Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen
US3307908A (en) * 1965-08-16 1967-03-07 Union Carbide Corp Preparation of aluminum nitride
US3577285A (en) * 1968-03-28 1971-05-04 Ibm Method for epitaxially growing silicon carbide onto a crystalline substrate
US3589936A (en) * 1969-08-04 1971-06-29 Air Reduction Heteroepitaxial growth of germanium on sapphire
US3922475A (en) * 1970-06-22 1975-11-25 Rockwell International Corp Process for producing nitride films
US4008111A (en) * 1975-12-31 1977-02-15 International Business Machines Corporation AlN masking for selective etching of sapphire

Also Published As

Publication number Publication date
CA1122859A (en) 1982-05-04
JPS54155762A (en) 1979-12-08
IT1166778B (it) 1987-05-06
DE2960342D1 (en) 1981-08-20
JPS5612009B2 (it) 1981-03-18
EP0005442A1 (fr) 1979-11-28
EP0005442B1 (fr) 1981-05-13
US4152182A (en) 1979-05-01

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