IT7829676A0 - Procedimento e gas per il trattamento di dispositivi semiconduttori. - Google Patents
Procedimento e gas per il trattamento di dispositivi semiconduttori.Info
- Publication number
- IT7829676A0 IT7829676A0 IT7829676A IT2967678A IT7829676A0 IT 7829676 A0 IT7829676 A0 IT 7829676A0 IT 7829676 A IT7829676 A IT 7829676A IT 2967678 A IT2967678 A IT 2967678A IT 7829676 A0 IT7829676 A0 IT 7829676A0
- Authority
- IT
- Italy
- Prior art keywords
- treatment
- gas
- semiconductor devices
- semiconductor
- devices
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/850,713 US4303467A (en) | 1977-11-11 | 1977-11-11 | Process and gas for treatment of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
IT7829676A0 true IT7829676A0 (it) | 1978-11-10 |
Family
ID=25308913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT7829676A IT7829676A0 (it) | 1977-11-11 | 1978-11-10 | Procedimento e gas per il trattamento di dispositivi semiconduttori. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4303467A (it) |
JP (1) | JPS5489484A (it) |
CA (1) | CA1117400A (it) |
DE (1) | DE2848691A1 (it) |
FR (1) | FR2408913A1 (it) |
GB (1) | GB2008499B (it) |
IT (1) | IT7829676A0 (it) |
NL (1) | NL7811183A (it) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD150318A3 (de) * | 1980-02-08 | 1981-08-26 | Rainer Moeller | Verfahren und rohrreaktor zur plasmachemischen dampfphasenabscheidung und zum plasmaaetzen |
US4264409A (en) * | 1980-03-17 | 1981-04-28 | International Business Machines Corporation | Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide |
US4415402A (en) * | 1981-04-02 | 1983-11-15 | The Perkin-Elmer Corporation | End-point detection in plasma etching or phosphosilicate glass |
US4550239A (en) * | 1981-10-05 | 1985-10-29 | Tokyo Denshi Kagaku Kabushiki Kaisha | Automatic plasma processing device and heat treatment device |
US4550242A (en) * | 1981-10-05 | 1985-10-29 | Tokyo Denshi Kagaku Kabushiki Kaisha | Automatic plasma processing device and heat treatment device for batch treatment of workpieces |
US4462882A (en) * | 1983-01-03 | 1984-07-31 | Massachusetts Institute Of Technology | Selective etching of aluminum |
US4505782A (en) * | 1983-03-25 | 1985-03-19 | Lfe Corporation | Plasma reactive ion etching of aluminum and aluminum alloys |
JPS60240121A (ja) * | 1984-05-15 | 1985-11-29 | Fujitsu Ltd | 横型炉 |
GB8431422D0 (en) * | 1984-12-13 | 1985-01-23 | Standard Telephones Cables Ltd | Plasma reactor vessel |
US4749440A (en) * | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
JPH0698292B2 (ja) * | 1986-07-03 | 1994-12-07 | 忠弘 大見 | 超高純度ガスの供給方法及び供給系 |
US4793897A (en) * | 1987-03-20 | 1988-12-27 | Applied Materials, Inc. | Selective thin film etch process |
US5169478A (en) * | 1987-10-08 | 1992-12-08 | Friendtech Laboratory, Ltd. | Apparatus for manufacturing semiconductor devices |
DE68923247T2 (de) * | 1988-11-04 | 1995-10-26 | Fujitsu Ltd | Verfahren zum Erzeugen eines Fotolackmusters. |
US4900395A (en) * | 1989-04-07 | 1990-02-13 | Fsi International, Inc. | HF gas etching of wafers in an acid processor |
US5217567A (en) * | 1992-02-27 | 1993-06-08 | International Business Machines Corporation | Selective etching process for boron nitride films |
US5362353A (en) * | 1993-02-26 | 1994-11-08 | Lsi Logic Corporation | Faraday cage for barrel-style plasma etchers |
US20040213368A1 (en) * | 1995-09-11 | 2004-10-28 | Norman Rostoker | Fusion reactor that produces net power from the p-b11 reaction |
US6465159B1 (en) * | 1999-06-28 | 2002-10-15 | Lam Research Corporation | Method and apparatus for side wall passivation for organic etch |
US6664740B2 (en) * | 2001-02-01 | 2003-12-16 | The Regents Of The University Of California | Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma |
US6611106B2 (en) * | 2001-03-19 | 2003-08-26 | The Regents Of The University Of California | Controlled fusion in a field reversed configuration and direct energy conversion |
JP2004273532A (ja) * | 2003-03-05 | 2004-09-30 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
US9123512B2 (en) | 2005-03-07 | 2015-09-01 | The Regents Of The Unviersity Of California | RF current drive for plasma electric generation system |
US8031824B2 (en) | 2005-03-07 | 2011-10-04 | Regents Of The University Of California | Inductive plasma source for plasma electric generation system |
US9607719B2 (en) | 2005-03-07 | 2017-03-28 | The Regents Of The University Of California | Vacuum chamber for plasma electric generation system |
SG11201402259YA (en) | 2011-11-14 | 2014-06-27 | Univ California | Systems and methods for forming and maintaining a high performance frc |
MX2016001066A (es) | 2013-08-29 | 2016-08-03 | Halliburton Energy Services Inc | Metodos y sistemas para generar especies de fluoruro reactivas a partir de un precursor gaseoso en una formacion subterranea para su estimulacion. |
SI3312843T1 (sl) | 2013-09-24 | 2020-02-28 | Tae Technologies, Inc. | Sistemi za tvorjenje in ohranjanje visokozmogljivega FRC |
PE20170757A1 (es) | 2014-10-13 | 2017-07-04 | Tri Alpha Energy Inc | Sistemas y metodos para fusionar y comprimir toroides compactos |
TWI654908B (zh) | 2014-10-30 | 2019-03-21 | 美商堤艾億科技公司 | 形成及維持高效能場反轉型磁場結構的系統及方法 |
PT3295459T (pt) | 2015-05-12 | 2020-11-19 | Tae Tech Inc | Sistemas e processos para reduzir correntes de foucault indesejáveis |
EP3357067B1 (en) | 2015-11-13 | 2021-09-29 | TAE Technologies, Inc. | Systems and methods for frc plasma position stability |
MY194606A (en) | 2016-10-28 | 2022-12-06 | Tae Tech Inc | Systems and methods for improved sustainment of a high performance frc elevated energies utilizing neutral beam injectors with tunable beam energies |
AU2017355652B2 (en) | 2016-11-04 | 2022-12-15 | Tae Technologies, Inc. | Systems and methods for improved sustainment of a high performance FRC with multi-scaled capture type vacuum pumping |
EA201991202A1 (ru) | 2016-11-15 | 2019-10-31 | Системы и способы улучшенного поддержания высокоэффективной конфигурации с обращенным полем и нагрева электронов посредством высших гармоник быстрых волн в высокоэффективной конфигурации с обращенным полем | |
WO2020037264A1 (en) * | 2018-08-17 | 2020-02-20 | Life Technologies Corporation | Method of forming ion sensors |
EP3837539A1 (en) * | 2018-08-17 | 2021-06-23 | Life Technologies Corporation | Method of forming ion sensors |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4026742A (en) * | 1972-11-22 | 1977-05-31 | Katsuhiro Fujino | Plasma etching process for making a microcircuit device |
US4213818A (en) * | 1979-01-04 | 1980-07-22 | Signetics Corporation | Selective plasma vapor etching process |
-
1977
- 1977-11-11 US US05/850,713 patent/US4303467A/en not_active Expired - Lifetime
-
1978
- 1978-11-08 GB GB7843603A patent/GB2008499B/en not_active Expired
- 1978-11-08 CA CA000315970A patent/CA1117400A/en not_active Expired
- 1978-11-09 DE DE19782848691 patent/DE2848691A1/de not_active Withdrawn
- 1978-11-10 NL NL7811183A patent/NL7811183A/xx not_active Application Discontinuation
- 1978-11-10 JP JP13874678A patent/JPS5489484A/ja active Pending
- 1978-11-10 IT IT7829676A patent/IT7829676A0/it unknown
- 1978-11-13 FR FR7831933A patent/FR2408913A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB2008499B (en) | 1982-07-28 |
US4303467A (en) | 1981-12-01 |
GB2008499A (en) | 1979-06-06 |
DE2848691A1 (de) | 1979-05-17 |
FR2408913A1 (fr) | 1979-06-08 |
CA1117400A (en) | 1982-02-02 |
NL7811183A (nl) | 1979-05-15 |
JPS5489484A (en) | 1979-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT7829676A0 (it) | Procedimento e gas per il trattamento di dispositivi semiconduttori. | |
IT1096889B (it) | Dispositivo per il trattamento di gas di scarico | |
IT1075017B (it) | Procedimento per il trattamento di estratti antocianinici | |
IT1068922B (it) | Procedimento e dispositivo per il trattamento e la combustione di rifiuti | |
IT1064668B (it) | Procedimento per il trattamento di rifiuti e prodotti ottenuti | |
IT7849580A0 (it) | Apparecchio catalitico per il trattamento di gas | |
IT7827116A0 (it) | Apparecchiatura per il trattamentodi fluidi. | |
IT1063279B (it) | Apparecchiatura per il trattamento di wafer o moduli semiconduttori | |
IT7821387A0 (it) | Scarico. apparecchiatura per trattare gas di | |
IT1062021B (it) | Procedimento e dispositivo per il trattamento di scaglie di laminazione | |
IT7821113A0 (it) | Processo e apparecchio per il trattamento di gas di rifiuto. | |
IT7827273A0 (it) | Procedimento per il trattamento superficiale stabilizzante di corpi semiconduttori. | |
IT7821574A0 (it) | Procedimento e dispositivo per laproduzione di vello. | |
IT7831071A0 (it) | Trattamento di idrocarburi. | |
IT1091167B (it) | Procedimento per il trattamento di effluenti nitrici | |
IT1079339B (it) | Procedimento per il trattamento di gas da forni di cokeria | |
IT1105624B (it) | Procedimento per il trattamento di fanhiglie di scarico | |
NL7807818A (nl) | Werkwijze voor de vervaardiging van halfgeleiderinrich- tingen. | |
IT7969475A0 (it) | Procedimento e dispositivo di raffreddamento per il trattamento di metalli | |
IT7819995A0 (it) | Dispositivo semiconduttore e metodo di incapsulamento dello stesso. | |
IT7819527A0 (it) | Appararecchiatura per il trattamento di articoli. | |
IT1062619B (it) | Procedimento ed impianto per la depurazione di-stillativa di 2.5 diosso i ossa 2 fosfolani | |
IT1095593B (it) | Impianto di depurazione di gas di altoforno | |
IT7829985A0 (it) | Procedimento e dispositivo per il trattamento di pietre e laterizi. | |
IT7822919A0 (it) | Procedimento e dispositivo per il trattamento di acque di scarico contenenti metalli. |