FR2408913A1 - Procede et gaz pour enlever une matiere d'un element semi-conducteur dans un milieu de plasma - Google Patents

Procede et gaz pour enlever une matiere d'un element semi-conducteur dans un milieu de plasma

Info

Publication number
FR2408913A1
FR2408913A1 FR7831933A FR7831933A FR2408913A1 FR 2408913 A1 FR2408913 A1 FR 2408913A1 FR 7831933 A FR7831933 A FR 7831933A FR 7831933 A FR7831933 A FR 7831933A FR 2408913 A1 FR2408913 A1 FR 2408913A1
Authority
FR
France
Prior art keywords
gas
semiconductor element
removing material
plasma medium
sif
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7831933A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dionex Corp
Original Assignee
Dionex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dionex Corp filed Critical Dionex Corp
Publication of FR2408913A1 publication Critical patent/FR2408913A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PROCEDE ET MELANGE GAZEUX DE TRAITEMENT AU PLASMA POUR L'ENLEVEMENT DE MATIERES LORS DE LA FABRICATION D'ELEMENTS SEMI-CONDUCTEURS. LES ELEMENTS SEMI-CONDUCTEURS SONT EXPOSES A UN PLASMA GAZEUX CONTENANT DU SIF, OU UN MELANGE DE SIF ET D'OXYGENE, PENDANT UNE DUREE SUFFISANTE POUR ENLEVER DE CES ELEMENTS LA QUANTITE SOUHAITEE DE MATIERE. DOMAINE D'APPLICATION : FABRICATION DE SEMI-CONDUCTEURS.
FR7831933A 1977-11-11 1978-11-13 Procede et gaz pour enlever une matiere d'un element semi-conducteur dans un milieu de plasma Withdrawn FR2408913A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/850,713 US4303467A (en) 1977-11-11 1977-11-11 Process and gas for treatment of semiconductor devices

Publications (1)

Publication Number Publication Date
FR2408913A1 true FR2408913A1 (fr) 1979-06-08

Family

ID=25308913

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7831933A Withdrawn FR2408913A1 (fr) 1977-11-11 1978-11-13 Procede et gaz pour enlever une matiere d'un element semi-conducteur dans un milieu de plasma

Country Status (8)

Country Link
US (1) US4303467A (fr)
JP (1) JPS5489484A (fr)
CA (1) CA1117400A (fr)
DE (1) DE2848691A1 (fr)
FR (1) FR2408913A1 (fr)
GB (1) GB2008499B (fr)
IT (1) IT7829676A0 (fr)
NL (1) NL7811183A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0036144A1 (fr) * 1980-03-17 1981-09-23 International Business Machines Corporation Procédé d'attaque sélectif du silicium à l'aide d'ions réactifs
EP0036061B1 (fr) * 1980-02-08 1984-07-18 VEB Zentrum für Forschung und Technologie Mikroelektronik Procédé et réacteur tubulaire pour le dépôt à partir de la phase vapeur ainsi que pour le décapage par un plasma
EP0283306A2 (fr) * 1987-03-20 1988-09-21 Applied Materials, Inc. Procédé d'attaque sélective de couches minces
EP0368732A1 (fr) * 1988-11-04 1990-05-16 Fujitsu Limited Procédé pour former un masque en matière photorésistante

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415402A (en) * 1981-04-02 1983-11-15 The Perkin-Elmer Corporation End-point detection in plasma etching or phosphosilicate glass
US4550242A (en) * 1981-10-05 1985-10-29 Tokyo Denshi Kagaku Kabushiki Kaisha Automatic plasma processing device and heat treatment device for batch treatment of workpieces
US4550239A (en) * 1981-10-05 1985-10-29 Tokyo Denshi Kagaku Kabushiki Kaisha Automatic plasma processing device and heat treatment device
US4462882A (en) * 1983-01-03 1984-07-31 Massachusetts Institute Of Technology Selective etching of aluminum
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
JPS60240121A (ja) * 1984-05-15 1985-11-29 Fujitsu Ltd 横型炉
GB8431422D0 (en) * 1984-12-13 1985-01-23 Standard Telephones Cables Ltd Plasma reactor vessel
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JPH0698292B2 (ja) * 1986-07-03 1994-12-07 忠弘 大見 超高純度ガスの供給方法及び供給系
US5169478A (en) * 1987-10-08 1992-12-08 Friendtech Laboratory, Ltd. Apparatus for manufacturing semiconductor devices
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5217567A (en) * 1992-02-27 1993-06-08 International Business Machines Corporation Selective etching process for boron nitride films
US5362353A (en) * 1993-02-26 1994-11-08 Lsi Logic Corporation Faraday cage for barrel-style plasma etchers
US20040213368A1 (en) * 1995-09-11 2004-10-28 Norman Rostoker Fusion reactor that produces net power from the p-b11 reaction
US6465159B1 (en) * 1999-06-28 2002-10-15 Lam Research Corporation Method and apparatus for side wall passivation for organic etch
US6664740B2 (en) 2001-02-01 2003-12-16 The Regents Of The University Of California Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
JP2004273532A (ja) * 2003-03-05 2004-09-30 Hitachi High-Technologies Corp プラズマエッチング方法
US9123512B2 (en) 2005-03-07 2015-09-01 The Regents Of The Unviersity Of California RF current drive for plasma electric generation system
US9607719B2 (en) 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US8031824B2 (en) 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
RS58860B1 (sr) 2011-11-14 2019-07-31 Univ California Postupci za formiranje i održavanje frc visokih performansi
WO2015030761A1 (fr) 2013-08-29 2015-03-05 Halliburton Energy Services, Inc. Procédés et systèmes pour générer des espèces de fluorure réactif à partir d'un précurseur gazeux dans une formation souterraine en vue de sa stimulation
EP3312843B1 (fr) 2013-09-24 2019-10-23 TAE Technologies, Inc. Systèmes de formation et de maintien d'une frc à haute performance
EA034349B1 (ru) 2014-10-13 2020-01-30 Таэ Текнолоджиз, Инк. Система для формирования, сжатия и слияния компактных тороидов плазмы
SG11201703167UA (en) 2014-10-30 2017-05-30 Tri Alpha Energy Inc Systems and methods for forming and maintaining a high performance frc
KR102598740B1 (ko) 2015-05-12 2023-11-03 티에이이 테크놀로지스, 인크. 원하지 않는 맴돌이 전류를 감소시키는 시스템 및 방법
SG11201803610QA (en) 2015-11-13 2018-05-30 Tae Technologies Inc Systems and methods for frc plasma position stability
UA128079C2 (uk) 2016-10-28 2024-04-03 Тае Текнолоджіз, Інк. Системи і способи поліпшеної підтримки підвищених енергій високоефективної конфігурації з оберненим полем, що передбачають використання інжекторів нейтральних пучків з настроюваними енергіями пучків
UA127712C2 (uk) 2016-11-04 2023-12-13 Тае Текнолоджіз, Інк. Системи і способи поліпшеної підтримки високоефективної конфігурації з оберненим полем з вакуумуванням із захопленням багатомасштабного типу
KR102590709B1 (ko) 2016-11-15 2023-10-17 티에이이 테크놀로지스, 인크. 고성능 frc의 개선된 지속성 및 고성능 frc에서의 고속 고조파 전자 가열을 위한 시스템들 및 방법들
CN112585458A (zh) * 2018-08-17 2021-03-30 生命技术公司 形成离子传感器的方法
CN112585459B (zh) * 2018-08-17 2024-01-02 生命技术公司 形成离子传感器的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026742A (en) * 1972-11-22 1977-05-31 Katsuhiro Fujino Plasma etching process for making a microcircuit device
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0036061B1 (fr) * 1980-02-08 1984-07-18 VEB Zentrum für Forschung und Technologie Mikroelektronik Procédé et réacteur tubulaire pour le dépôt à partir de la phase vapeur ainsi que pour le décapage par un plasma
EP0036144A1 (fr) * 1980-03-17 1981-09-23 International Business Machines Corporation Procédé d'attaque sélectif du silicium à l'aide d'ions réactifs
EP0283306A2 (fr) * 1987-03-20 1988-09-21 Applied Materials, Inc. Procédé d'attaque sélective de couches minces
EP0283306A3 (fr) * 1987-03-20 1990-07-18 Applied Materials, Inc. Procédé d'attaque sélective de couches minces
EP0368732A1 (fr) * 1988-11-04 1990-05-16 Fujitsu Limited Procédé pour former un masque en matière photorésistante
US5447598A (en) * 1988-11-04 1995-09-05 Fujitsu Limited Process for forming resist mask pattern

Also Published As

Publication number Publication date
DE2848691A1 (de) 1979-05-17
IT7829676A0 (it) 1978-11-10
GB2008499B (en) 1982-07-28
JPS5489484A (en) 1979-07-16
GB2008499A (en) 1979-06-06
US4303467A (en) 1981-12-01
NL7811183A (nl) 1979-05-15
CA1117400A (fr) 1982-02-02

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Legal Events

Date Code Title Description
ST Notification of lapse