FR2453916A1 - Procede de production de grenat de gadolinium et de gallium - Google Patents

Procede de production de grenat de gadolinium et de gallium

Info

Publication number
FR2453916A1
FR2453916A1 FR8008145A FR8008145A FR2453916A1 FR 2453916 A1 FR2453916 A1 FR 2453916A1 FR 8008145 A FR8008145 A FR 8008145A FR 8008145 A FR8008145 A FR 8008145A FR 2453916 A1 FR2453916 A1 FR 2453916A1
Authority
FR
France
Prior art keywords
gallium
gadolinium
iridium
grenate
realization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8008145A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of FR2453916A1 publication Critical patent/FR2453916A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Soft Magnetic Materials (AREA)

Abstract

PROCEDE DE PRODUCTION DE GRENAT NON CRISTALLIN DE GADOLINIUM ET DE GALLIUM, NE CONTENANT PRATIQUEMENT AUCUNE INCLUSION D'IRIDIUM, A L'AIDE D'UN BAIN 9 D'OXYDES DE GADOLINIUM ET DE GALLIUM PLACE DANS UN CREUSET D'IRIDIUM 8. UNE ATMOSPHERE D'AZOTE CONTENANT ENVIRON 0,5 A 3 EN VOLUME D'OXYGENE EST INTRODUITE EN CONTINU PAR UN TUBE D'IRIDIUM 47 DANS LA CHAMBRE SITUEE AU-DESSUS DU BAIN A L'INTERIEUR DU CREUSET. APPLICATION A LA REALISATION DE CORPS PIRIFORMES DE SECTION CIRCULAIRE QUI SONT ENSUITE DECOUPES EN RONDELLES POUR LA REALISATION DE SUBSTRATS DE COMPOSANTS ELECTRONIQUES.
FR8008145A 1979-04-12 1980-04-11 Procede de production de grenat de gadolinium et de gallium Withdrawn FR2453916A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2921679A 1979-04-12 1979-04-12

Publications (1)

Publication Number Publication Date
FR2453916A1 true FR2453916A1 (fr) 1980-11-07

Family

ID=21847874

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8008145A Withdrawn FR2453916A1 (fr) 1979-04-12 1980-04-11 Procede de production de grenat de gadolinium et de gallium

Country Status (7)

Country Link
JP (1) JPS5918360B2 (fr)
CA (1) CA1171341A (fr)
CH (1) CH646402A5 (fr)
DE (1) DE3013045C2 (fr)
FR (1) FR2453916A1 (fr)
GB (1) GB2047113B (fr)
NL (1) NL8002144A (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605094A (ja) * 1983-06-13 1985-01-11 Shin Etsu Chem Co Ltd ガリウムガ−ネツト単結晶の製造方法
FR2548689B1 (fr) * 1983-07-07 1985-11-08 Crismatec Procede de fabrication de monocristaux de germanate de bismuth a fort rendement de scintillation
US6451711B1 (en) * 2000-05-04 2002-09-17 Osemi, Incorporated Epitaxial wafer apparatus
US6936900B1 (en) 2000-05-04 2005-08-30 Osemi, Inc. Integrated transistor devices
US7187045B2 (en) 2002-07-16 2007-03-06 Osemi, Inc. Junction field effect metal oxide compound semiconductor integrated transistor devices
EP2841630B1 (fr) 2012-04-24 2017-04-12 Forschungsverbund Berlin E.V. Procédé et appareil pour la croissance de monocristaux d'oxyde d'indium (in2o3) et monocristal d'oxyde d'indium (in2o3)
CN104313693B (zh) * 2014-09-19 2017-01-18 北京雷生强式科技有限责任公司 掺杂钇铝石榴石激光晶体的生长装置、晶体生长炉及制备方法
EP3851562A4 (fr) * 2019-08-21 2022-02-09 Meishan Boya Advanced Materials Co., Ltd. Procédé et équipement de croissance de cristaux scintillateurs à structure grenat à composants multiples

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2149518A1 (fr) * 1971-08-18 1973-03-30 Western Electric Co
FR2355560A1 (fr) * 1976-06-24 1978-01-20 Union Carbide Corp Procede pour produire du gadolinium-gallium mono-cristallin parfait

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2149518A1 (fr) * 1971-08-18 1973-03-30 Western Electric Co
FR2355560A1 (fr) * 1976-06-24 1978-01-20 Union Carbide Corp Procede pour produire du gadolinium-gallium mono-cristallin parfait

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C.D. GRAHAM et al.: "Magnetism and magnetic materials", 1973, New York, American Institute of Physics conference proceedings, no. 10, partie I et partie 2, pages 237-255 *

Also Published As

Publication number Publication date
DE3013045A1 (de) 1980-10-16
JPS55136200A (en) 1980-10-23
CH646402A5 (fr) 1984-11-30
GB2047113A (en) 1980-11-26
GB2047113B (en) 1983-08-03
NL8002144A (nl) 1980-10-14
JPS5918360B2 (ja) 1984-04-26
CA1171341A (fr) 1984-07-24
DE3013045C2 (de) 1983-11-03

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Legal Events

Date Code Title Description
ST Notification of lapse