JPS5489484A - Method of treating semiconductor and gas used therefor - Google Patents

Method of treating semiconductor and gas used therefor

Info

Publication number
JPS5489484A
JPS5489484A JP13874678A JP13874678A JPS5489484A JP S5489484 A JPS5489484 A JP S5489484A JP 13874678 A JP13874678 A JP 13874678A JP 13874678 A JP13874678 A JP 13874678A JP S5489484 A JPS5489484 A JP S5489484A
Authority
JP
Japan
Prior art keywords
gas used
used therefor
treating semiconductor
treating
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13874678A
Other languages
English (en)
Inventor
Sukoonabuatsuka Furanku
Ruuisu Baashin Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROSS Inc WILL
Dionex Corp
Original Assignee
ROSS Inc WILL
Dionex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROSS Inc WILL, Dionex Corp filed Critical ROSS Inc WILL
Publication of JPS5489484A publication Critical patent/JPS5489484A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP13874678A 1977-11-11 1978-11-10 Method of treating semiconductor and gas used therefor Pending JPS5489484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/850,713 US4303467A (en) 1977-11-11 1977-11-11 Process and gas for treatment of semiconductor devices

Publications (1)

Publication Number Publication Date
JPS5489484A true JPS5489484A (en) 1979-07-16

Family

ID=25308913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13874678A Pending JPS5489484A (en) 1977-11-11 1978-11-10 Method of treating semiconductor and gas used therefor

Country Status (8)

Country Link
US (1) US4303467A (ja)
JP (1) JPS5489484A (ja)
CA (1) CA1117400A (ja)
DE (1) DE2848691A1 (ja)
FR (1) FR2408913A1 (ja)
GB (1) GB2008499B (ja)
IT (1) IT7829676A0 (ja)
NL (1) NL7811183A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641236A (en) * 1987-03-20 1989-01-05 Applied Materials Inc Method for selectively etching thin film and gas mixture used therefor
JP2004273532A (ja) * 2003-03-05 2004-09-30 Hitachi High-Technologies Corp プラズマエッチング方法

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD150318A3 (de) * 1980-02-08 1981-08-26 Rainer Moeller Verfahren und rohrreaktor zur plasmachemischen dampfphasenabscheidung und zum plasmaaetzen
US4264409A (en) * 1980-03-17 1981-04-28 International Business Machines Corporation Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide
US4415402A (en) * 1981-04-02 1983-11-15 The Perkin-Elmer Corporation End-point detection in plasma etching or phosphosilicate glass
US4550242A (en) * 1981-10-05 1985-10-29 Tokyo Denshi Kagaku Kabushiki Kaisha Automatic plasma processing device and heat treatment device for batch treatment of workpieces
US4550239A (en) * 1981-10-05 1985-10-29 Tokyo Denshi Kagaku Kabushiki Kaisha Automatic plasma processing device and heat treatment device
US4462882A (en) * 1983-01-03 1984-07-31 Massachusetts Institute Of Technology Selective etching of aluminum
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
JPS60240121A (ja) * 1984-05-15 1985-11-29 Fujitsu Ltd 横型炉
GB8431422D0 (en) * 1984-12-13 1985-01-23 Standard Telephones Cables Ltd Plasma reactor vessel
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JPH0698292B2 (ja) * 1986-07-03 1994-12-07 忠弘 大見 超高純度ガスの供給方法及び供給系
US5169478A (en) * 1987-10-08 1992-12-08 Friendtech Laboratory, Ltd. Apparatus for manufacturing semiconductor devices
EP0368732B1 (en) * 1988-11-04 1995-06-28 Fujitsu Limited Process for forming resist mask pattern
US4900395A (en) * 1989-04-07 1990-02-13 Fsi International, Inc. HF gas etching of wafers in an acid processor
US5217567A (en) * 1992-02-27 1993-06-08 International Business Machines Corporation Selective etching process for boron nitride films
US5362353A (en) * 1993-02-26 1994-11-08 Lsi Logic Corporation Faraday cage for barrel-style plasma etchers
US20040213368A1 (en) * 1995-09-11 2004-10-28 Norman Rostoker Fusion reactor that produces net power from the p-b11 reaction
US6465159B1 (en) * 1999-06-28 2002-10-15 Lam Research Corporation Method and apparatus for side wall passivation for organic etch
US6664740B2 (en) * 2001-02-01 2003-12-16 The Regents Of The University Of California Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
US9607719B2 (en) 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US8031824B2 (en) 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
US9123512B2 (en) 2005-03-07 2015-09-01 The Regents Of The Unviersity Of California RF current drive for plasma electric generation system
IN2014CN03872A (ja) 2011-11-14 2015-10-16 Univ California
US9664017B2 (en) 2013-08-29 2017-05-30 Halliburton Energy Services, Inc. Methods and systems for generating reactive fluoride species from a gaseous precursor in a subterranean formation for stimulation thereof
RS59657B1 (sr) 2013-09-24 2020-01-31 Tae Technologies Inc Sistem za formiranje i održavanje frc visokih performansi
JP6611802B2 (ja) 2014-10-13 2019-11-27 ティーエーイー テクノロジーズ， インコーポレイテッド コンパクトトーラスを融合および圧縮するためのシステムおよび方法
CN111511087B (zh) 2014-10-30 2023-08-11 阿尔法能源技术公司 用于形成和保持高性能frc的系统和方法
JP6771774B2 (ja) 2015-05-12 2020-10-21 ティーエーイー テクノロジーズ， インコーポレイテッド 不所望の渦電流を低減するシステムおよび方法
WO2017083796A1 (en) 2015-11-13 2017-05-18 Tri Alpha Energy, Inc. Systems and methods for frc plasma position stability
PE20190677A1 (es) 2016-10-28 2019-05-14 Tae Tech Inc Sistemas y metodos para mejorar el mantenimiento de un alto desempeno de elevadas energias frc (field reverse configuration-configuracion de campo invertido) que utilizan inyectores de haz neutro con energia de haz ajustable
BR112019009034A2 (pt) 2016-11-04 2019-07-09 Tae Tech Inc sistemas e métodos para melhor sustentação de uma frc de alto desempenho com bombeamento a vácuo tipo captura multidimensionado
JP7266880B2 (ja) 2016-11-15 2023-05-01 ティーエーイー テクノロジーズ， インコーポレイテッド 高性能ｆｒｃの改良された持続性および高性能ｆｒｃにおける高調高速波電子加熱のためのシステムおよび方法
TWI719590B (zh) * 2018-08-17 2021-02-21 美商生命技術公司 形成離子感測器之方法
WO2020037259A1 (en) * 2018-08-17 2020-02-20 Life Technologies Corporation Method of forming ion sensors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026742A (en) * 1972-11-22 1977-05-31 Katsuhiro Fujino Plasma etching process for making a microcircuit device
US4213818A (en) * 1979-01-04 1980-07-22 Signetics Corporation Selective plasma vapor etching process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS641236A (en) * 1987-03-20 1989-01-05 Applied Materials Inc Method for selectively etching thin film and gas mixture used therefor
JP2004273532A (ja) * 2003-03-05 2004-09-30 Hitachi High-Technologies Corp プラズマエッチング方法

Also Published As

Publication number Publication date
US4303467A (en) 1981-12-01
CA1117400A (en) 1982-02-02
GB2008499B (en) 1982-07-28
NL7811183A (nl) 1979-05-15
FR2408913A1 (fr) 1979-06-08
IT7829676A0 (it) 1978-11-10
GB2008499A (en) 1979-06-06
DE2848691A1 (de) 1979-05-17

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