JPS53114686A - Semiconductor and method of producing same - Google Patents

Semiconductor and method of producing same

Info

Publication number
JPS53114686A
JPS53114686A JP2781578A JP2781578A JPS53114686A JP S53114686 A JPS53114686 A JP S53114686A JP 2781578 A JP2781578 A JP 2781578A JP 2781578 A JP2781578 A JP 2781578A JP S53114686 A JPS53114686 A JP S53114686A
Authority
JP
Japan
Prior art keywords
semiconductor
producing same
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2781578A
Other languages
Japanese (ja)
Inventor
Antoniusu Andoriasu F Yohanesu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS53114686A publication Critical patent/JPS53114686A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/7688Filling of holes, grooves or trenches, e.g. vias, with conductive material by deposition over sacrificial masking layer, e.g. lift-off
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5283Cross-sectional geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP2781578A 1977-03-16 1978-03-13 Semiconductor and method of producing same Pending JPS53114686A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7702814A NL7702814A (en) 1977-03-16 1977-03-16 SEMI-CONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THIS.

Publications (1)

Publication Number Publication Date
JPS53114686A true JPS53114686A (en) 1978-10-06

Family

ID=19828174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2781578A Pending JPS53114686A (en) 1977-03-16 1978-03-13 Semiconductor and method of producing same

Country Status (6)

Country Link
JP (1) JPS53114686A (en)
CA (1) CA1102923A (en)
DE (1) DE2809411A1 (en)
FR (1) FR2384355A1 (en)
GB (1) GB1594067A (en)
NL (1) NL7702814A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3214991A1 (en) * 1982-04-22 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Semiconductor chip with discrete capacitor
FR2634318B1 (en) * 1988-07-13 1992-02-21 Commissariat Energie Atomique METHOD FOR MANUFACTURING AN INTEGRATED MEMORY CELL

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088980A (en) * 1973-12-10 1975-07-17

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161617C (en) * 1968-06-17 1980-02-15 Nippon Electric Co SEMICONDUCTOR WITH FLAT SURFACE AND METHOD FOR MANUFACTURING THE SAME
GB1364677A (en) * 1970-07-10 1974-08-29 Philips Electronic Associated Semiconductor devices and methods of making semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5088980A (en) * 1973-12-10 1975-07-17

Also Published As

Publication number Publication date
FR2384355A1 (en) 1978-10-13
NL7702814A (en) 1978-09-19
GB1594067A (en) 1981-07-30
DE2809411A1 (en) 1978-09-21
CA1102923A (en) 1981-06-09

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