GB1364677A - Semiconductor devices and methods of making semiconductor devices - Google Patents

Semiconductor devices and methods of making semiconductor devices

Info

Publication number
GB1364677A
GB1364677A GB1028374A GB1028374A GB1364677A GB 1364677 A GB1364677 A GB 1364677A GB 1028374 A GB1028374 A GB 1028374A GB 1028374 A GB1028374 A GB 1028374A GB 1364677 A GB1364677 A GB 1364677A
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semi
substrate
epitaxial layer
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1028374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NLAANVRAGE7010204,A external-priority patent/NL170902C/en
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1364677A publication Critical patent/GB1364677A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers

Abstract

1364677 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 7 July 1971 [10 July 1970] 10283/74 Divided out of 1364676 Heading H1K The subject-matter of this Specification is entirely disclosed in Specification 1,364,676, but the claims are concerned with a semi-conductor device comprising an epitaxial layer on a substrate, a buried region between the layer and the substrate and extending partially into the former, a dielectrically isolating region surrounding a portion of the epitaxial layer and extending partly therethrough to a depth sufficient to meet the buried region but not the substrate, and a semi-conductor component formed in the isolated portion of the epitaxial layer.
GB1028374A 1970-07-10 1971-07-07 Semiconductor devices and methods of making semiconductor devices Expired GB1364677A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE7010204,A NL170902C (en) 1970-07-10 1970-07-10 SEMICONDUCTOR DEVICE, IN PARTICULAR MONOLITHICALLY INTEGRATED SEMICONDUCTOR CIRCUIT.
GB3183971A GB1364676A (en) 1970-07-10 1971-07-07 Semiconductor integrated device

Publications (1)

Publication Number Publication Date
GB1364677A true GB1364677A (en) 1974-08-29

Family

ID=26261100

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1028374A Expired GB1364677A (en) 1970-07-10 1971-07-07 Semiconductor devices and methods of making semiconductor devices

Country Status (1)

Country Link
GB (1) GB1364677A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2384355A1 (en) * 1977-03-16 1978-10-13 Philips Nv SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2384355A1 (en) * 1977-03-16 1978-10-13 Philips Nv SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS

Similar Documents

Publication Publication Date Title
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
GB1526417A (en) Fabrication of semiconductor devices by molecular beam techniques
ES403027A1 (en) Semiconductor device and method of manufacturing same
GB1328145A (en) Method of producing integrated cirucits
GB988903A (en) Semiconductor devices and methods of making same
ES393035A1 (en) Semiconductor devices having local oxide isolation
GB1501483A (en) Semiconductor device
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1364677A (en) Semiconductor devices and methods of making semiconductor devices
CA922026A (en) Method of making electrical contacts on the surface of a semiconductor device
GB1270227A (en) Semiconductor devices
GB1477514A (en) Semiconductor devices
CA966231A (en) Epitaxial outdiffusion technique for integrated bipolar and field effect transistors
GB1208577A (en) Methods of manufacturing semiconductor devices
ES383504A1 (en) A high frequency integrated circuit having circuit elements in separate and mutually spaced isolation regions
GB1524854A (en) Semiconductors
GB1531811A (en) Complementary transistors and their manufacture
GB1153052A (en) Manufacture of Semiconductor Devices
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
GB1280491A (en) Semiconductor device
GB1099049A (en) A method of manufacturing transistors
GB1340461A (en) Method of forming a radio frequency transistor device
GB958247A (en) Semiconductor devices and methods of fabricating same
GB1525557A (en) Semiconductor structure having the function of a diode
GB1481184A (en) Integrated circuits

Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years