GB1208577A - Methods of manufacturing semiconductor devices - Google Patents

Methods of manufacturing semiconductor devices

Info

Publication number
GB1208577A
GB1208577A GB2751670A GB2751670A GB1208577A GB 1208577 A GB1208577 A GB 1208577A GB 2751670 A GB2751670 A GB 2751670A GB 2751670 A GB2751670 A GB 2751670A GB 1208577 A GB1208577 A GB 1208577A
Authority
GB
United Kingdom
Prior art keywords
silicon
methods
semiconductor devices
step during
manufacturing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2751670A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL666614016A external-priority patent/NL153374B/en
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1208577A publication Critical patent/GB1208577A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,208,577. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 2 Oct., 1967 [5 Oct., 1966], No. 27516/70. Divided out of 1,208,574. Heading H1K. The subject-matter of this Specification is substantially the same as that described in Specifications 1,208,574 and 1,208,575 but the claims are concerned with a method of oxidizing part of the surface of the silicon body comprising a step during which silicon oxide is caused to grow into the silicon body to form a layer which is partially sunk into the body, a step during which this oxide layer is partially or completely removed, and a further step during which silicon oxide is caused to grow into the silicon to form an oxide layer which is partially sunk into the body to a greater depth than was the first oxide layer.
GB2751670A 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices Expired GB1208577A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL666614016A NL153374B (en) 1966-10-05 1966-10-05 PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE PROVIDED WITH AN OXIDE LAYER AND SEMI-CONDUCTOR DEVICE MANUFACTURED ACCORDING TO THE PROCEDURE.
GB44763/67A GB1208574A (en) 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
GB1208577A true GB1208577A (en) 1970-10-14

Family

ID=26265451

Family Applications (4)

Application Number Title Priority Date Filing Date
GB2723970A Expired GB1208576A (en) 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices
GB2751670A Expired GB1208577A (en) 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices
GB2723870A Expired GB1208575A (en) 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices
GB2751770A Expired GB1208578A (en) 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB2723970A Expired GB1208576A (en) 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB2723870A Expired GB1208575A (en) 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices
GB2751770A Expired GB1208578A (en) 1966-10-05 1967-10-02 Methods of manufacturing semiconductor devices

Country Status (1)

Country Link
GB (4) GB1208576A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2441170A1 (en) * 1973-09-07 1975-03-13 Philips Nv METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
JPS6054450A (en) * 1983-09-05 1985-03-28 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4592128A (en) * 1984-06-04 1986-06-03 Inmos Corporation Method for fabricating integrated circuits with polysilicon resistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2441170A1 (en) * 1973-09-07 1975-03-13 Philips Nv METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT

Also Published As

Publication number Publication date
GB1208578A (en) 1970-10-14
GB1208575A (en) 1970-10-14
GB1208576A (en) 1970-10-14

Similar Documents

Publication Publication Date Title
ES345702A1 (en) Methods of producing a semiconductor device and a semiconductor device produced by said method
CA963173A (en) Semiconductor device and method of manufacturing the semiconductor device
ES403027A1 (en) Semiconductor device and method of manufacturing same
GB1328145A (en) Method of producing integrated cirucits
GB1258354A (en)
GB1208577A (en) Methods of manufacturing semiconductor devices
GB1501483A (en) Semiconductor device
GB1081376A (en) Method of producing a semiconductor device
CA963172A (en) Semiconductor device and method of manufacturing the device
CA957784A (en) Method of forming region of a desired conductivity type in the surface of a semiconductor body
GB1214238A (en) A process for manufacturing a semiconductor device
GB1420065A (en) Methods of manufacturing semiconductor bodies
GB1364677A (en) Semiconductor devices and methods of making semiconductor devices
GB1524854A (en) Semiconductors
GB1126338A (en) A method of producing semiconductor bodies with an extremely low-resistance substrate
GB1153052A (en) Manufacture of Semiconductor Devices
GB1246022A (en) Method of manufacturing semiconductor devices
GB958246A (en) Transistors and methods of making same
GB1099049A (en) A method of manufacturing transistors
GB1204437A (en) Improvements in the manufacture of high frequency transistors
GB1280491A (en) Semiconductor device
FR2288388A1 (en) Forming assembly of semi-conductor elements - by producing diffusion zones and filled grooves on opposite structure faces
CA984974A (en) Integrated circuit having bipolar transistors and method of manufacturing said circuit
JPS5245290A (en) Integrated circuit of semiconductor and method for its fabrication
GB1333988A (en) Isolation of semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years