CA984974A - Integrated circuit having bipolar transistors and method of manufacturing said circuit - Google Patents

Integrated circuit having bipolar transistors and method of manufacturing said circuit

Info

Publication number
CA984974A
CA984974A CA157,039A CA157039A CA984974A CA 984974 A CA984974 A CA 984974A CA 157039 A CA157039 A CA 157039A CA 984974 A CA984974 A CA 984974A
Authority
CA
Canada
Prior art keywords
circuit
manufacturing
bipolar transistors
integrated circuit
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA157,039A
Other versions
CA157039S (en
Inventor
Jean Encinas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA984974A publication Critical patent/CA984974A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
CA157,039A 1971-11-22 1972-11-21 Integrated circuit having bipolar transistors and method of manufacturing said circuit Expired CA984974A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7141734A FR2160709B1 (en) 1971-11-22 1971-11-22

Publications (1)

Publication Number Publication Date
CA984974A true CA984974A (en) 1976-03-02

Family

ID=9086150

Family Applications (1)

Application Number Title Priority Date Filing Date
CA157,039A Expired CA984974A (en) 1971-11-22 1972-11-21 Integrated circuit having bipolar transistors and method of manufacturing said circuit

Country Status (6)

Country Link
JP (1) JPS52676B2 (en)
CA (1) CA984974A (en)
DE (1) DE2256883C3 (en)
FR (1) FR2160709B1 (en)
GB (1) GB1408627A (en)
IT (1) IT975787B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608267A1 (en) * 1976-02-28 1977-09-08 Itt Ind Gmbh Deutsche METHOD OF MANUFACTURING A MONOLITHIC INTEGRATED CIRCUIT

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3547716A (en) * 1968-09-05 1970-12-15 Ibm Isolation in epitaxially grown monolithic devices
US3566218A (en) * 1968-10-02 1971-02-23 Nat Semiconductor Corp The Multiple base width integrated circuit

Also Published As

Publication number Publication date
DE2256883A1 (en) 1973-05-30
DE2256883B2 (en) 1980-07-10
FR2160709B1 (en) 1974-09-27
GB1408627A (en) 1975-10-01
FR2160709A1 (en) 1973-07-06
DE2256883C3 (en) 1981-03-12
JPS52676B2 (en) 1977-01-10
JPS4860878A (en) 1973-08-25
IT975787B (en) 1974-08-10

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