IT1163869B - Wafer e relativo procedimento di lavorazione - Google Patents

Wafer e relativo procedimento di lavorazione

Info

Publication number
IT1163869B
IT1163869B IT8322321A IT2232183A IT1163869B IT 1163869 B IT1163869 B IT 1163869B IT 8322321 A IT8322321 A IT 8322321A IT 2232183 A IT2232183 A IT 2232183A IT 1163869 B IT1163869 B IT 1163869B
Authority
IT
Italy
Prior art keywords
wafer
processing process
related processing
processing
Prior art date
Application number
IT8322321A
Other languages
English (en)
Other versions
IT8322321A0 (it
Inventor
Maejima Hisashi
Nishizuka Hiroshi
Komoriya Susumu
Egashira Etuo
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8322321A0 publication Critical patent/IT8322321A0/it
Application granted granted Critical
Publication of IT1163869B publication Critical patent/IT1163869B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
    • B24D5/02—Wheels in one piece
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y10T428/219—Edge structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
IT8322321A 1982-07-30 1983-07-29 Wafer e relativo procedimento di lavorazione IT1163869B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57131949A JPH0624199B2 (ja) 1982-07-30 1982-07-30 ウエハの加工方法

Publications (2)

Publication Number Publication Date
IT8322321A0 IT8322321A0 (it) 1983-07-29
IT1163869B true IT1163869B (it) 1987-04-08

Family

ID=15069972

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8322321A IT1163869B (it) 1982-07-30 1983-07-29 Wafer e relativo procedimento di lavorazione

Country Status (10)

Country Link
US (1) US4783225A (it)
JP (1) JPH0624199B2 (it)
KR (1) KR900006775B1 (it)
DE (1) DE3326356C3 (it)
FR (1) FR2531108B1 (it)
GB (1) GB2126008B (it)
HK (1) HK69487A (it)
IT (1) IT1163869B (it)
MY (1) MY8700637A (it)
SG (1) SG41787G (it)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5279992A (en) * 1982-07-30 1994-01-18 Hitachi, Ltd. Method of producing a wafer having a curved notch
US5230747A (en) * 1982-07-30 1993-07-27 Hitachi, Ltd. Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer
US4579760A (en) * 1985-01-08 1986-04-01 International Business Machines Corporation Wafer shape and method of making same
JPS62239517A (ja) * 1986-04-10 1987-10-20 Nec Corp 半導体基板
JPH0624179B2 (ja) * 1989-04-17 1994-03-30 信越半導体株式会社 半導体シリコンウェーハおよびその製造方法
JPH0624200B2 (ja) * 1989-04-28 1994-03-30 信越半導体株式会社 半導体デバイス用基板の加工方法
US5036624A (en) * 1989-06-21 1991-08-06 Silicon Technology Corporation Notch grinder
JP2742710B2 (ja) * 1989-06-26 1998-04-22 三菱電機株式会社 半導体ウェハ
JPH04113619A (ja) * 1990-09-03 1992-04-15 Mitsubishi Materials Corp ウェーハおよびその製造方法
JP2559650B2 (ja) * 1991-11-27 1996-12-04 信越半導体株式会社 ウエーハ面取部研磨装置
KR0185234B1 (ko) * 1991-11-28 1999-04-15 가부시키 가이샤 토쿄 세이미쯔 반도체 웨이퍼의 모떼기 방법
JPH07205001A (ja) * 1993-11-16 1995-08-08 Tokyo Seimitsu Co Ltd ウェーハ面取り機
JP2827885B2 (ja) * 1994-02-12 1998-11-25 信越半導体株式会社 半導体単結晶基板およびその製造方法
US5529051A (en) * 1994-07-26 1996-06-25 At&T Corp. Method of preparing silicon wafers
US5510623A (en) * 1995-02-24 1996-04-23 Loral Fairchild Corp. Center readout intra-oral image sensor
JP3336866B2 (ja) * 1996-08-27 2002-10-21 信越半導体株式会社 気相成長用シリコン単結晶基板の製造方法
JP2000254845A (ja) * 1999-03-10 2000-09-19 Nippei Toyama Corp ウエーハのノッチ溝の面取り方法及びウエーハ
MY127032A (en) * 1999-12-28 2006-11-30 Hitachi Metals Ltd Work chamfering apparatus and work chamfering method
US6361405B1 (en) * 2000-04-06 2002-03-26 Applied Materials, Inc. Utility wafer for chemical mechanical polishing
US6804086B2 (en) 2000-04-27 2004-10-12 Seagate Technology Llc Unitary crystalline slider with edges rounded by laser ablation
US6787891B2 (en) * 2000-12-06 2004-09-07 Medtronic, Inc. Freeform substrates and devices
US20020074633A1 (en) * 2000-12-18 2002-06-20 Larson Lary R. Interconnection of active and passive components in substrate
JP2007189093A (ja) * 2006-01-13 2007-07-26 Disco Abrasive Syst Ltd 半導体ウエーハ
TWI314758B (en) * 2006-04-20 2009-09-11 Touch Micro System Tech Wafer having an asymmetric edge profile and method of making the same
US8389099B1 (en) * 2007-06-01 2013-03-05 Rubicon Technology, Inc. Asymmetrical wafer configurations and method for creating the same
WO2017018275A1 (ja) * 2015-07-24 2017-02-02 旭硝子株式会社 ガラス基板、積層基板、積層基板の製造方法、積層体、梱包体、およびガラス基板の製造方法
JP2017190279A (ja) * 2016-04-15 2017-10-19 住友金属鉱山株式会社 非磁性ガーネット基板の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB922150A (en) * 1958-08-04 1963-03-27 Philips Electrical Ind Ltd Improvements in or relating to methods of making semiconductor bodies
NL256387A (it) * 1960-09-29
US3951728A (en) * 1974-07-30 1976-04-20 Hitachi, Ltd. Method of treating semiconductor wafers
JPS5846858B2 (ja) * 1975-11-13 1983-10-19 日本電気ホームエレクトロニクス株式会社 ハンドウタイソウチノセイゾウホウホウ
JPS5338594A (en) * 1976-09-20 1978-04-08 Rakuton Kagaku Kougiyou Kk Baits for angling
US4228937A (en) * 1979-03-29 1980-10-21 Rca Corporation Cleaving apparatus
US4344260A (en) * 1979-07-13 1982-08-17 Nagano Electronics Industrial Co., Ltd. Method for precision shaping of wafer materials
US4256229A (en) * 1979-09-17 1981-03-17 Rockwell International Corporation Boat for wafer processing
JPS56105638A (en) * 1980-01-26 1981-08-22 Sumitomo Electric Ind Ltd Manufacture of circular gallium arsenide wafer
JPS5743410A (en) * 1980-08-29 1982-03-11 Fujitsu Ltd Manufacture of semiconductor device
JPS5823430A (ja) * 1981-08-04 1983-02-12 Nec Kyushu Ltd 半導体ウエハ−ス
JPH05338594A (ja) * 1992-06-11 1993-12-21 Mitsubishi Heavy Ind Ltd 飛行訓練安全監視装置

Also Published As

Publication number Publication date
MY8700637A (en) 1987-12-31
IT8322321A0 (it) 1983-07-29
GB8320110D0 (en) 1983-08-24
FR2531108A1 (fr) 1984-02-03
FR2531108B1 (fr) 1987-05-07
JPS5923524A (ja) 1984-02-07
JPH0624199B2 (ja) 1994-03-30
KR840005383A (ko) 1984-11-12
DE3326356A1 (de) 1984-02-09
US4783225A (en) 1988-11-08
DE3326356C3 (de) 1998-06-10
HK69487A (en) 1987-10-02
KR900006775B1 (ko) 1990-09-21
SG41787G (en) 1987-07-17
GB2126008B (en) 1986-08-06
GB2126008A (en) 1984-03-14
DE3326356C2 (it) 1993-07-01

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970728