GB922150A - Improvements in or relating to methods of making semiconductor bodies - Google Patents

Improvements in or relating to methods of making semiconductor bodies

Info

Publication number
GB922150A
GB922150A GB2635259A GB2635259A GB922150A GB 922150 A GB922150 A GB 922150A GB 2635259 A GB2635259 A GB 2635259A GB 2635259 A GB2635259 A GB 2635259A GB 922150 A GB922150 A GB 922150A
Authority
GB
United Kingdom
Prior art keywords
strips
along lines
slices
dividing
strip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2635259A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB922150A publication Critical patent/GB922150A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

922,150. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. July 31, 1959 [Aug. 4, 1958], No. 26352/59. Class 37. A method of making strips of semi-conductor material of uniform length comprises dividing a rod into slices by cuts perpendicular to its longitudinal axis with a spacing at least as long as a strip, and parallel cuts parallel to the axis of the rod with a spacing corresponding to the strip thickness, and dividing the slices into strips along parallel lines. In an example a germanium or silicon rod 25 (Fig. 5) is cut along lines 27 and then along lines 29 (Fig. 6), or vice versa, and the resultant slices 28 divided into strips along lines 30 (Fig. 7) or along lines perpendicular to this. Transistors are formed from the resulting strips by alloying dots to corresponding points on opposite faces along the length of the strips and dividing the strip between each pair of dots.
GB2635259A 1958-08-04 1959-07-31 Improvements in or relating to methods of making semiconductor bodies Expired GB922150A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL230223 1958-08-04

Publications (1)

Publication Number Publication Date
GB922150A true GB922150A (en) 1963-03-27

Family

ID=19751299

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2635259A Expired GB922150A (en) 1958-08-04 1959-07-31 Improvements in or relating to methods of making semiconductor bodies

Country Status (3)

Country Link
DE (1) DE1095952B (en)
FR (1) FR1233270A (en)
GB (1) GB922150A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783225A (en) * 1982-07-30 1988-11-08 Hitachi, Ltd. Wafer and method of working the same
US5230747A (en) * 1982-07-30 1993-07-27 Hitachi, Ltd. Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer
US5279992A (en) * 1982-07-30 1994-01-18 Hitachi, Ltd. Method of producing a wafer having a curved notch
DE102011088054A1 (en) * 2011-12-08 2013-06-13 Solarworld Innovations Gmbh Method for manufacturing silicon wafer used in solar module, involves introducing parallel saw sections into silicon crystal so as to manufacture silicon discs and aligning saw sections parallel to longitudinal axis of silicon crystal

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514082C3 (en) * 1964-02-13 1984-08-30 Kabushiki Kaisha Hitachi Seisakusho, Tokio/Tokyo Field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402839A (en) * 1941-03-27 1946-06-25 Bell Telephone Labor Inc Electrical translating device utilizing silicon
US2840770A (en) * 1955-03-14 1958-06-24 Texas Instruments Inc Semiconductor device and method of manufacture

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783225A (en) * 1982-07-30 1988-11-08 Hitachi, Ltd. Wafer and method of working the same
US5230747A (en) * 1982-07-30 1993-07-27 Hitachi, Ltd. Wafer having chamfered bend portions in the joint regions between the contour of the wafer and the cut-away portion of the wafer
US5279992A (en) * 1982-07-30 1994-01-18 Hitachi, Ltd. Method of producing a wafer having a curved notch
USRE40139E1 (en) * 1982-07-30 2008-03-04 Renesas Technology Corp. Wafer having chamfered bend portions in the joint regions between the contour of the cut-away portion of the wafer
DE102011088054A1 (en) * 2011-12-08 2013-06-13 Solarworld Innovations Gmbh Method for manufacturing silicon wafer used in solar module, involves introducing parallel saw sections into silicon crystal so as to manufacture silicon discs and aligning saw sections parallel to longitudinal axis of silicon crystal

Also Published As

Publication number Publication date
DE1095952B (en) 1960-12-29
FR1233270A (en) 1960-10-12

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