GB852003A - Improvements relating to the production of wafers of semi-conductor material - Google Patents

Improvements relating to the production of wafers of semi-conductor material

Info

Publication number
GB852003A
GB852003A GB18536/58A GB1853658A GB852003A GB 852003 A GB852003 A GB 852003A GB 18536/58 A GB18536/58 A GB 18536/58A GB 1853658 A GB1853658 A GB 1853658A GB 852003 A GB852003 A GB 852003A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
wafers
production
conductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB18536/58A
Inventor
Roland Freestone
Mary Teresa Weir
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Edison Swan Ltd
Original Assignee
Siemens Edison Swan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Edison Swan Ltd filed Critical Siemens Edison Swan Ltd
Priority to GB18536/58A priority Critical patent/GB852003A/en
Priority to US817874A priority patent/US3054709A/en
Priority to DES63377A priority patent/DE1142420B/en
Publication of GB852003A publication Critical patent/GB852003A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49789—Obtaining plural product pieces from unitary workpiece
    • Y10T29/4979—Breaking through weakened portion

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

852,003. Semi-conductor devices. SIEMENS EDISON SWAN Ltd. May 22, 1959 [June 10, 1958], No. 18536/58. Class 37 A slice of monocrystalline germanium or other semi-conductor is separated into sections by scribing lines on the slice and then etching with an etchant which preferentially attacks the strained regions of the semi-conductor. The etchant may consist of equal proportions of hydrogen peroxide and potassium hydroxide, and used at 70‹ to 80‹C. The scribing may be performed by means of a diamond probe, and a plurality of slices may be processed simultaneously. Fig. 2 shows a pattern of scribed lines on a crystal, and Fig. 3 the position after etching has taken place.
GB18536/58A 1958-06-10 1958-06-10 Improvements relating to the production of wafers of semi-conductor material Expired GB852003A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB18536/58A GB852003A (en) 1958-06-10 1958-06-10 Improvements relating to the production of wafers of semi-conductor material
US817874A US3054709A (en) 1958-06-10 1959-06-03 Production of wafers of semiconductor material
DES63377A DE1142420B (en) 1958-06-10 1959-06-09 Method for producing platelet-shaped semiconductor bodies for semiconductor components from a single semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB18536/58A GB852003A (en) 1958-06-10 1958-06-10 Improvements relating to the production of wafers of semi-conductor material

Publications (1)

Publication Number Publication Date
GB852003A true GB852003A (en) 1960-10-19

Family

ID=10114099

Family Applications (1)

Application Number Title Priority Date Filing Date
GB18536/58A Expired GB852003A (en) 1958-06-10 1958-06-10 Improvements relating to the production of wafers of semi-conductor material

Country Status (3)

Country Link
US (1) US3054709A (en)
DE (1) DE1142420B (en)
GB (1) GB852003A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1234611B (en) * 1961-11-28 1967-02-16 Philips Nv Device for separating a plate made of germanium or the like into pieces

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB934107A (en) * 1960-10-17 1963-08-14 Mark Perks Ltd Improvements in or relating to the patterning of metal surfaces
US3122464A (en) * 1961-01-10 1964-02-25 Rca Corp Method of fabricating semiconductor devices
US3163568A (en) * 1961-02-15 1964-12-29 Sylvania Electric Prod Method of treating semiconductor devices
US3181983A (en) * 1961-03-06 1965-05-04 Sperry Rand Corp Method for controlling the characteristic of a tunnel diode
NL284965A (en) * 1961-11-17 1900-01-01
US3457633A (en) * 1962-12-31 1969-07-29 Ibm Method of making crystal shapes having optically related surfaces
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3283271A (en) * 1963-09-30 1966-11-01 Raytheon Co Notched semiconductor junction strain transducer
NL154867B (en) * 1964-02-13 1977-10-17 Hitachi Ltd PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE AS WELL AS MADE IN ACCORDANCE WITH THIS PROCEDURE, FIELD EFFECT TRANSISTOR AND PLANAR TRANSISTOR.
US3513022A (en) * 1967-04-26 1970-05-19 Rca Corp Method of fabricating semiconductor devices
GB1182820A (en) * 1967-06-27 1970-03-04 Westinghouse Brake & Signal Manufacture of Semiconductor Elements.
US3497948A (en) * 1967-09-05 1970-03-03 Transistor Automation Corp Method and apparatus for sorting semi-conductor devices
GB1248584A (en) * 1968-03-05 1971-10-06 Lucas Industries Ltd Thyristors and other semi-conductor devices
US3816906A (en) * 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
US3680184A (en) * 1970-05-05 1972-08-01 Gen Electric Method of making an electrostatic deflection electrode array
US3847697A (en) * 1972-10-30 1974-11-12 Western Electric Co Article transfer method
US4096619A (en) * 1977-01-31 1978-06-27 International Telephone & Telegraph Corporation Semiconductor scribing method
US4237601A (en) * 1978-10-13 1980-12-09 Exxon Research & Engineering Co. Method of cleaving semiconductor diode laser wafers
JPS55136946A (en) * 1979-04-12 1980-10-25 Ngk Spark Plug Co Ltd Gas component detecting element and manufacture thereof
DE3044947A1 (en) * 1980-11-28 1982-07-01 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING VERY THIN SEMICONDUCTOR CHIPS
US4415405A (en) * 1981-08-19 1983-11-15 Yale University Method for engraving a grid pattern on microscope slides and slips
JPH07201970A (en) * 1993-12-01 1995-08-04 At & T Global Inf Solutions Internatl Inc Separation using shallow groove in integrated circuit
JP3169842B2 (en) * 1996-10-07 2001-05-28 セイコーインスツルメンツ株式会社 Thermal head and method of manufacturing the same
JP2003209259A (en) * 2002-01-17 2003-07-25 Fujitsu Ltd Method for manufacturing semiconductor device and semiconductor chip
JP5089643B2 (en) * 2009-04-30 2012-12-05 インターナショナル・ビジネス・マシーンズ・コーポレーション Optical connection element manufacturing method, optical transmission board, optical connection component, connection method, and optical transmission system

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2493461A (en) * 1944-05-04 1950-01-03 Harvey Wells Communications In Means and method of forming piezo-electric crystals
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
GB699050A (en) * 1950-09-09 1953-10-28 Sylvania Electric Prod Transistors, and their method of manufacture
DE823470C (en) * 1950-09-12 1951-12-03 Siemens Ag Method for etching a semiconductor
NL105904C (en) * 1955-12-30
US2849296A (en) * 1956-01-23 1958-08-26 Philco Corp Etching composition and method
US2978804A (en) * 1958-08-13 1961-04-11 Sylvania Electric Prod Method of classifying non-magnetic elements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1234611B (en) * 1961-11-28 1967-02-16 Philips Nv Device for separating a plate made of germanium or the like into pieces

Also Published As

Publication number Publication date
US3054709A (en) 1962-09-18
DE1142420B (en) 1963-01-17

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