DE1142420B - A method of producing plaettchenfoermigen Halbleiterkoerpern of semiconductor devices from a semiconductor single crystal - Google Patents

A method of producing plaettchenfoermigen Halbleiterkoerpern of semiconductor devices from a semiconductor single crystal

Info

Publication number
DE1142420B
DE1142420B DES63377A DES0063377A DE1142420B DE 1142420 B DE1142420 B DE 1142420B DE S63377 A DES63377 A DE S63377A DE S0063377 A DES0063377 A DE S0063377A DE 1142420 B DE1142420 B DE 1142420B
Authority
DE
Germany
Prior art keywords
semiconductor
plaettchenfoermigen
halbleiterkoerpern
crystal
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES63377A
Other languages
German (de)
Inventor
Roland Freestone
Mary Teresa Weir
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASS ELECT IND WOOLWICH Ltd
Original Assignee
ASS ELECT IND WOOLWICH Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB1853658A priority Critical patent/GB852003A/en
Application filed by ASS ELECT IND WOOLWICH Ltd filed Critical ASS ELECT IND WOOLWICH Ltd
Publication of DE1142420B publication Critical patent/DE1142420B/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49789Obtaining plural product pieces from unitary workpiece
    • Y10T29/4979Breaking through weakened portion
DES63377A 1958-06-10 1959-06-09 A method of producing plaettchenfoermigen Halbleiterkoerpern of semiconductor devices from a semiconductor single crystal Pending DE1142420B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1853658A GB852003A (en) 1958-06-10 1958-06-10 Improvements relating to the production of wafers of semi-conductor material

Publications (1)

Publication Number Publication Date
DE1142420B true DE1142420B (en) 1963-01-17

Family

ID=10114099

Family Applications (1)

Application Number Title Priority Date Filing Date
DES63377A Pending DE1142420B (en) 1958-06-10 1959-06-09 A method of producing plaettchenfoermigen Halbleiterkoerpern of semiconductor devices from a semiconductor single crystal

Country Status (3)

Country Link
US (1) US3054709A (en)
DE (1) DE1142420B (en)
GB (1) GB852003A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514082A1 (en) * 1964-02-13 1969-09-18 Hitachi Ltd Semiconductor device and process for their preparation

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB934107A (en) * 1960-10-17 1963-08-14 Mark Perks Ltd Improvements in or relating to the patterning of metal surfaces
US3122464A (en) * 1961-01-10 1964-02-25 Rca Corp Method of fabricating semiconductor devices
US3163568A (en) * 1961-02-15 1964-12-29 Sylvania Electric Prod Method of treating semiconductor devices
US3181983A (en) * 1961-03-06 1965-05-04 Sperry Rand Corp Method for controlling the characteristic of a tunnel diode
NL284965A (en) * 1961-11-17 1900-01-01
BE625323A (en) * 1961-11-28 1900-01-01
US3457633A (en) * 1962-12-31 1969-07-29 Ibm Method of making crystal shapes having optically related surfaces
US3165430A (en) * 1963-01-21 1965-01-12 Siliconix Inc Method of ultra-fine semiconductor manufacture
US3283271A (en) * 1963-09-30 1966-11-01 Raytheon Co Notched semiconductor junction strain transducer
US3513022A (en) * 1967-04-26 1970-05-19 Rca Corp Method of fabricating semiconductor devices
GB1182820A (en) * 1967-06-27 1970-03-04 Westinghouse Brake & Signal Manufacture of Semiconductor Elements.
US3497948A (en) * 1967-09-05 1970-03-03 Transistor Automation Corp Method and apparatus for sorting semi-conductor devices
GB1248584A (en) * 1968-03-05 1971-10-06 Lucas Industries Ltd Thyristors and other semi-conductor devices
US3816906A (en) * 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
US3680184A (en) * 1970-05-05 1972-08-01 Gen Electric Method of making an electrostatic deflection electrode array
US3847697A (en) * 1972-10-30 1974-11-12 Western Electric Co Article transfer method
US4096619A (en) * 1977-01-31 1978-06-27 International Telephone & Telegraph Corporation Semiconductor scribing method
US4237601A (en) * 1978-10-13 1980-12-09 Exxon Research & Engineering Co. Method of cleaving semiconductor diode laser wafers
JPS55136946A (en) * 1979-04-12 1980-10-25 Ngk Spark Plug Co Ltd Gas component detecting element and manufacture thereof
DE3044947A1 (en) * 1980-11-28 1982-07-01 Siemens Ag Method for producing very thin semiconductor chips
US4415405A (en) * 1981-08-19 1983-11-15 Yale University Method for engraving a grid pattern on microscope slides and slips
JPH07201970A (en) * 1993-12-01 1995-08-04 At & T Global Inf Solutions Internatl Inc Separation using shallow groove in integrated circuit
JP3169842B2 (en) * 1996-10-07 2001-05-28 セイコーインスツルメンツ株式会社 Thermal head and method of manufacturing the same
JP2003209259A (en) * 2002-01-17 2003-07-25 Fujitsu Ltd Method for manufacturing semiconductor device and semiconductor chip
JP5089643B2 (en) * 2009-04-30 2012-12-05 インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Optical connection element manufacturing method, optical transmission board, optical connection component, connection method, and optical transmission system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE823470C (en) * 1950-09-12 1951-12-03 Siemens Ag A method of etching a semiconductor
GB699050A (en) * 1950-09-09 1953-10-28 Sylvania Electric Prod Transistors, and their method of manufacture

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2493461A (en) * 1944-05-04 1950-01-03 Harvey Wells Communications In Means and method of forming piezo-electric crystals
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
NL105904C (en) * 1955-12-30
US2849296A (en) * 1956-01-23 1958-08-26 Philco Corp Etching composition and method
US2978804A (en) * 1958-08-13 1961-04-11 Sylvania Electric Prod Method of classifying non-magnetic elements

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB699050A (en) * 1950-09-09 1953-10-28 Sylvania Electric Prod Transistors, and their method of manufacture
DE823470C (en) * 1950-09-12 1951-12-03 Siemens Ag A method of etching a semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514082A1 (en) * 1964-02-13 1969-09-18 Hitachi Ltd Semiconductor device and process for their preparation

Also Published As

Publication number Publication date
GB852003A (en) 1960-10-19
US3054709A (en) 1962-09-18

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