DE3435138A1 - Improvement to a method for separating semiconductor components which are obtained by breaking semiconductor wafers - Google Patents

Improvement to a method for separating semiconductor components which are obtained by breaking semiconductor wafers

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Publication number
DE3435138A1
DE3435138A1 DE19843435138 DE3435138A DE3435138A1 DE 3435138 A1 DE3435138 A1 DE 3435138A1 DE 19843435138 DE19843435138 DE 19843435138 DE 3435138 A DE3435138 A DE 3435138A DE 3435138 A1 DE3435138 A1 DE 3435138A1
Authority
DE
Germany
Prior art keywords
crystal
breaking
directions
wafer
improvement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19843435138
Other languages
German (de)
Inventor
Jochen Dr. 8013 Haar Heinen
Christl 8012 Ottobrunn Lauterbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19843435138 priority Critical patent/DE3435138A1/en
Publication of DE3435138A1 publication Critical patent/DE3435138A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Dicing (AREA)

Abstract

An improvement to a method for separating semiconductor components which are obtained by breaking semiconductor wafers. The scratching (scoring) (and breaking) which has to be provided to separate the individual components obtained from a wafer is carried out in a direction which deviates from the crystal direction (for example 5-15 DEG ). <IMAGE>

Description

Verbesserung zu einem Verfahren zum Vereinzeln von Halb-Improvement to a method for separating half

leiter-Bauelementen, die durch Brechen aus Halbleiter-Wafern gewonnen sind.ladder components obtained from semiconductor wafers by breaking are.

Die vorliegende Erfindung bezieht sich auf eine Verbesserung eines Verfahrens, wie es im Oberbegriff des Patentanspruchs 1 angegeben ist.The present invention relates to an improvement in one Method as indicated in the preamble of claim 1.

Es ist bekannt, Halbleiter-Einzelbauelemente in der Weise herzustellen, daß die jeweilige Funktion des betreffenden Halbleiterbauelementes zunächst auf einem größeren Halbleiter-Wafer erzeugt wird, und zwar der Größe des Wafers entsprechend in großer Anzahl derselben Funktionen. Nach Durchführung der Verfahrensschritte zur Erzeugung derartiger Funktionen wird anschließend der Wafer in die Chips der Einzelbauelemente zerteilt, und zwar durch Anritzen des Wafers, z.B. mit einem Diamanten, und anschließendes Brechen. Es werden dabei die natürlichen Spaltflächen des Kristallgitters des Wafers ausgenutzt. Diese Methode eignet sich besonders bei Kristallen mit Zinkblende-Struktur, z.B.It is known to manufacture individual semiconductor components in such a way that that the respective function of the semiconductor component concerned initially a larger semiconductor wafer is produced according to the size of the wafer in large numbers of the same functions. After completing the procedural steps to generate such functions, the wafer is then inserted into the chips of the Individual components divided by scratching the wafer, e.g. with a diamond, and subsequent breaking. Thereby the natural cleavage surfaces of the crystal lattice become of the wafer used. This method is particularly suitable for crystals with a zinc blende structure, e.g.

bei III-V-Halbleitern. Die aufeinander senkrecht stehenden (110)-Kristallflächen dieses Kristalltyps besitzen diese Flächen als natürliche Spaltflächen; die sich für die Vereinzelung besonders gut ausnutzen lassen. Durch Ritzen und Brechen entlang von Kanten dieser Kristallflächen entstehen rechteckige Einzelelemente, deren Ober- und Unterseite von einheitlichen (100)- Kristallflächen gebildet werden.for III-V semiconductors. The perpendicular (110) crystal faces This type of crystal has these faces as natural cleavage faces; which can be used particularly well for isolation. By cracking and breaking along the edges of these crystal surfaces produce rectangular individual elements, the upper and the underside of uniform (100) crystal faces are formed.

Es ist bekannt, daß das Ritzen parallel zu Kristall ebenen an den entstandenen Bruchflächen bzw. im Kristall Fehlstellen erzeugen kann, die Ausgangspunkte für Vorgänge sind, die zu einer Veränderung, insbesondere zu Alterung und Zerstörung des Bauelements, führen können. Insbesondere bei in der Weise hergestellten rechteckigen Einzel bauelementen besteht eine Bruchgefahr in Richtung parallel zur kürzeren Kante.It is known that the scratching is parallel to the crystal planes resulting fracture surfaces or flaws in the crystal produce that are the starting points for operations that lead to a change, in particular can lead to aging and destruction of the component. Especially in the Rectangular individual components manufactured in a way that is prone to breakage Direction parallel to the shorter edge.

Es ist eine Aufgabe der vorliegenden Erfindung, eine technologisch möglichst' einfache Maßnahme anzugeben, mit der eine derartige Bruchgefahr für das fertige Einzelbauelement zumindest wesentlich verringert wird und die erwähnten Fehler wesentlich vermindert auftreten, so daß eine Erhöhung der Ausbeute und Qualität bei solchen Bauelementen aus insbesondere III-V-Halbleitermaterial erreicht wird.It is an object of the present invention, a technological one to indicate the simplest possible measure with which such a risk of breakage for the finished individual component is at least significantly reduced and the mentioned Errors occur significantly less, so that an increase in yield and quality is achieved in such components made of especially III-V semiconductor material.

Diese Aufgabe wird durch die den Merkmalen des Patentanspruchs 1 entsprechenden Maßnahmen gelöst.This object is achieved by the features of claim 1 corresponding Measures resolved.

Zur Lösung einer der obigen Aufgabenformulierung relativ weitgehend entsprechenden Aufgabe ist versucht worden, unter Anwendung von möglichst geringem Auflagedruck exakt parallel zu den (110)-Kristallflächen zu ritzen, speziell ausgewählte Kantenform für den Diamanten zu benutzen und außerdem beim Brechen ein nur möglichst kleines Biegemoment aufzuwenden.To solve one of the above formulation of problems relatively largely corresponding task has been attempted using the least possible Contact pressure to be scratched exactly parallel to the (110) crystal surfaces, specially selected To use the edge shape for the diamond and also only use one when breaking it to spend a small bending moment.

Das damit verbundene Auftreten von Fehlstellen wurde in Kauf genommen.The associated occurrence of imperfections was accepted.

Der Erfindung liegt der Gedanke zugrunde, von dem eingeführten Prinzip exakt parallelen Ritzens abzugehen. Gemäß der Erfindung ist vorgesehen, den Vorgang des Ritzens mit dem Diamanten bewußt so auszuführen, daß die Orientierung des Ritzens nicht möglichst exakt parallel zur (110)- bzw. (110)-Kristallebene durchgeführt wird, sondern daß eine erfindungsgemäß Abweichungsorientierung mit einem Orientierungswinkel ß angewendet wird. Der Winkel ß ist so bemessen, daß er sich deutlich vom Wert O Grad unterscheidet und speziell im Bereich von 5 Grad bis 15 Grad (Abweichung aus der Fläche der Ebene) liegt.The invention is based on the idea of the principle introduced to leave exactly parallel scratches. According to the invention it is provided that the process of scratching with the diamond in such a way that the orientation of the scratching not carried out as exactly as possible parallel to the (110) or (110) crystal plane is, but that a deviation orientation according to the invention with an orientation angle ß is applied. The angle ß is dimensioned so that he clear differs from the value O degrees and especially in the range from 5 degrees to 15 degrees (deviation from the area of the plane).

Überraschenderweise läßt sich mit einer solchen Abweichungsorientierung des Ritzens und mit anschließendem Brechen problemlos das Zerteilen des Wafers in die Einzelbauelemente durchführen. Makroskopisch gesehen haben diese Einzelbauelemente nach wie vor rechteckige Grundfläche. Est wenn man zu dem angegebenen Bereich wesentlich größeren Abweichungswinkeln übergeht, ist dies nicht mehr gewährleistet. Mikroskopisch weisen die nach der Erfindung entstandenen Seitenflächen zwar eine etwas gezahnte Struktur auf. Dies hat sich nicht nur als nicht nachteilig erwiesen, sondern es wurde festgestellt, daß derart hergestellte Einzelbauelementeweniger zum Durchbrechen bzw. Zerbrechen neigen. Die Querkraftkomponente, die beim Ritzen und Brechen auftritt, wirkt nicht weit in den Kristall hinein, sondern bewirkt nachgewiesenermaßen nur das Ausbilden der erwähnten gezahnten Abstufung in der jeweiligen Fläche.Surprisingly, with such a deviation orientation of scoring and then breaking the wafer into carry out the individual components. From a macroscopic point of view, these have individual components still rectangular base. Est if one is essential to the specified area passes over larger deviation angles, this is no longer guaranteed. Microscopic the side surfaces produced according to the invention have a somewhat toothed one Structure on. Not only has this proven not detrimental, but it has it has been found that individual components produced in this way are less prone to breaking through or tend to break. The shear force component that occurs when scratching and breaking, does not work far into the crystal, but has been shown to only have an effect the formation of the mentioned toothed gradation in the respective surface.

Die beigefügte Figur zeigt in der Teilfigur 1a das angewendete Winkel-Schema der Ritzrichtungen 3, 3a bezogen auf die (110)- bzw. (110)- Kirstallrichtungen 2, 2a. Die ausgezogen dargestellte Umrandung gibt in Aufsicht auf die Kristallfläche (100) die Außenkanten eines aus einem Wafer durch Vereinzelung herausgebrochenen Einzelbauelements. Mit weit übertrieben großer Winkelabweichung ist mit gestrichelten Linien 2, 2a der jeweilige Kristallrichtungsverlauf im Bauelement 1 angedeutet.The attached figure shows in the partial figure 1a the angle scheme used the scoring directions 3, 3a related to the (110) or (110) Kirstall directions 2, 2a. The border shown in solid lines gives a plan view of the crystal surface (100) the outer edges of one broken out of a wafer by dicing Single component. A far exaggerated large angular deviation is indicated by a dashed line Lines 2, 2a indicate the respective course of the crystal direction in the component 1.

Wie oben erwähnt, sind die (in der Figur senkrecht zur Zeichnungsebene stehenden) Seitenflächen des Bauelements 1 stufenförmig ausgebildet. Das Lupenbild der Teilfigur 1b läßt diese Stufenform deutlich erkennen.As mentioned above, the (in the figure are perpendicular to the plane of the drawing standing) side surfaces of the component 1 designed stepped. The magnified image of the partial figure 1b shows this step shape clearly.

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Claims (3)

Patentansprüche: @. Verfahren zum Vereinzeln von Halbleiter-Einzelbauelementen, deren Funktionen zunächst in einem größeren Verband eines Wafers hergestellt werden, und wobei das Vereinzeln durch Ritzen und Brechen des Wafers in auf die Kristallrichtungen bezogenen Richtungen erfolgt, g e k e n n z e i c h n e t dadurch daß die angewendete Ritzrichtung und damit die Richtung der zu erzeugenden Bruchkante um einen von Null abweichend orientierten Winkel ß - bezogen auf die betreffende Kristallrichtung - ausgerichtet wird.Claims: @. Method for separating individual semiconductor components, whose functions are initially established in a larger association of a wafer, and wherein the dicing by scoring and breaking the wafer in the crystal directions related directions takes place, indicated by the fact that the applied Direction of the scoring and thus the direction of the breaking edge to be generated around one of zero differently oriented angle ß - based on the relevant crystal direction - is aligned. 2. Verfahren nach Anspruch 1, g e k e n n z e i c h -n e t dadurch , daß der Winkel ß der Abweichungsorientierung zwischen 5 Grad und 15 Grad - bezogen auf die betreffende Kristallrichtung 2 - bemessen ist.2. The method according to claim 1, g e k e n n z e i c h -n e t thereby that the angle β of the deviation orientation between 5 degrees and 15 degrees - related on the relevant crystal direction 2 - is dimensioned. 3. Verfahren nach Anspruch 1 oder 2, g e k e n n -z e i c h n e t dadurch , daß der Kristall Zinblende-Struktur hat und die den Ritzrichtungen (3, 3a) zugrundeliegenden Kristallrichtungen (110)- bzw. (110)-Kristallrichtungen sind.3. The method according to claim 1 or 2, g e k e n n -z e i c h n e t by the fact that the crystal has a tinblende structure and the directions of the scratches (3, 3a) underlying crystal directions are (110) or (110) crystal directions.
DE19843435138 1984-09-25 1984-09-25 Improvement to a method for separating semiconductor components which are obtained by breaking semiconductor wafers Withdrawn DE3435138A1 (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1195352A1 (en) * 2000-10-09 2002-04-10 Interuniversitair Micro-Elektronica Centrum A method for producing micromachined devices and devices obtained thereof
EP1201604A2 (en) * 2000-10-09 2002-05-02 Interuniversitair Micro-Elektronica Centrum Vzw A method for producing micromachined devices and devices obtained thereof
US6740542B2 (en) 2000-10-09 2004-05-25 Interuniversitair Microelektronica Centrum Method for producing micromachined devices and devices obtained thereof
US20080230115A1 (en) * 2007-03-20 2008-09-25 Sanyo Electric Co., Ltd. Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell
US9766171B2 (en) 2014-03-17 2017-09-19 Columbia Insurance Company Devices, systems and method for flooring performance testing

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169837A (en) * 1963-07-31 1965-02-16 Int Rectifier Corp Method of dicing semiconductor wafers
DE1464712A1 (en) * 1962-10-30 1969-02-06 Ibm Process for the production of very small and geometrically very precise crystalline forms, in particular of semiconductor bodies for semiconductor components
DE1652510A1 (en) * 1967-02-10 1971-03-25 Siemens Ag Process for dividing disk-shaped bodies made of monocrystalline silicon or germanium
US3816906A (en) * 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
DD130608A1 (en) * 1977-02-28 1978-04-12 Hans Richter METHOD FOR PRODUCING SMALL PLAETS FROM CRYSTALLINE SEMICONDUCTED WASHERS
DE2731221A1 (en) * 1977-07-11 1979-02-01 Semikron Gleichrichterbau METHOD FOR MANUFACTURING SEMICONDUCTOR BODIES
DD209052A1 (en) * 1982-06-09 1984-04-18 Werk Fernsehelektronik Veb PROCESS FOR DISABLING ACHIEVEMENT OF A HIGH III B HIGH V - SEMICONDUCTOR DISCS

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464712A1 (en) * 1962-10-30 1969-02-06 Ibm Process for the production of very small and geometrically very precise crystalline forms, in particular of semiconductor bodies for semiconductor components
US3169837A (en) * 1963-07-31 1965-02-16 Int Rectifier Corp Method of dicing semiconductor wafers
DE1652510A1 (en) * 1967-02-10 1971-03-25 Siemens Ag Process for dividing disk-shaped bodies made of monocrystalline silicon or germanium
US3816906A (en) * 1969-06-20 1974-06-18 Siemens Ag Method of dividing mg-al spinel substrate wafers coated with semiconductor material and provided with semiconductor components
DD130608A1 (en) * 1977-02-28 1978-04-12 Hans Richter METHOD FOR PRODUCING SMALL PLAETS FROM CRYSTALLINE SEMICONDUCTED WASHERS
DE2731221A1 (en) * 1977-07-11 1979-02-01 Semikron Gleichrichterbau METHOD FOR MANUFACTURING SEMICONDUCTOR BODIES
DD209052A1 (en) * 1982-06-09 1984-04-18 Werk Fernsehelektronik Veb PROCESS FOR DISABLING ACHIEVEMENT OF A HIGH III B HIGH V - SEMICONDUCTOR DISCS

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1195352A1 (en) * 2000-10-09 2002-04-10 Interuniversitair Micro-Elektronica Centrum A method for producing micromachined devices and devices obtained thereof
EP1201604A2 (en) * 2000-10-09 2002-05-02 Interuniversitair Micro-Elektronica Centrum Vzw A method for producing micromachined devices and devices obtained thereof
US6740542B2 (en) 2000-10-09 2004-05-25 Interuniversitair Microelektronica Centrum Method for producing micromachined devices and devices obtained thereof
EP1201604A3 (en) * 2000-10-09 2006-04-12 Interuniversitair Micro-Elektronica Centrum Vzw A method for producing micromachined devices and devices obtained thereof
US20080230115A1 (en) * 2007-03-20 2008-09-25 Sanyo Electric Co., Ltd. Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell
US8389320B2 (en) * 2007-03-20 2013-03-05 Sanyo Electric Co., Ltd. Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell
EP1973174B1 (en) * 2007-03-20 2018-09-05 Panasonic Intellectual Property Management Co., Ltd. Method for fracturing semiconductor substrate and solar cell
US9766171B2 (en) 2014-03-17 2017-09-19 Columbia Insurance Company Devices, systems and method for flooring performance testing
US10684204B2 (en) 2014-03-17 2020-06-16 Columbia Insurance Company Devices, systems and method for flooring performance testing

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