DE2543651A1 - Integrated circuit semiconductor substrate - has position marks on its surface for contacting of electrode terminals - Google Patents

Integrated circuit semiconductor substrate - has position marks on its surface for contacting of electrode terminals

Info

Publication number
DE2543651A1
DE2543651A1 DE19752543651 DE2543651A DE2543651A1 DE 2543651 A1 DE2543651 A1 DE 2543651A1 DE 19752543651 DE19752543651 DE 19752543651 DE 2543651 A DE2543651 A DE 2543651A DE 2543651 A1 DE2543651 A1 DE 2543651A1
Authority
DE
Germany
Prior art keywords
marking
semiconductor substrate
bonding
wire
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19752543651
Other languages
German (de)
Inventor
Tsutomu Mimata
Masakazu Ozawa
Ryozo Yuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2543651A1 publication Critical patent/DE2543651A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

The semiconductor substrate of a component of an integrated circuit is provided on its surface with electrode terminals in such manner that at least in one electrode terminal region (2) is defined a position mark (3) for proper contacting. The position mark is preferably in the shape of a cross. It may be divided into two sections defining at least two electrode contacting regions. These two sections may also serve as directioning marks in the coordinate directions. The markings are used for wire contacting and the wire surface coming into contact with the marking should be at least equal to the surface of the position mark, onto which it is to be deposited.

Description

Halbleitersubstrat Die Erfindung betrifft ein Halbleitersubstrat mit mehreren, auf seiner Oberfläche angeordneten Flektrodenanschlüs.sen. Semiconductor substrate The invention relates to a semiconductor substrate with several Flektrodenanschlüs.sen arranged on its surface.

Allgemein bezieht die vorliegende Erfindung sich auf ein Haibleitersubstrat oder eine Tablette bzw. ein Halbleiter-Bauelement.In general, the present invention relates to a semiconductor substrate or a tablet or a semiconductor component.

Beim Zusammenbau bzw. der Montage von Haibleiteranordnungen wird ein Verfahrensschritt durchgeführt, der als "Kontaktieren" oder "Bonden" bezeichnet wird; damit ist die.Herstellung elektrischer Verbindung durch dünne Drähte innerhalb der Halbleiteranordnung gemeint; in dieser Weise wird die Anschlußfläche bzw. der tontaktfleck des Halbleiter-Bauelementes mittels eines dünnen Metalldrahtes, der beispielsweise aus Gold (Au), Aluminium (Al) oder einem ähnlichen Material besteht, mit Leitungen verbunden. Die elektrische Verbindung wird unter Verwendung des Metalidrahtes zwischen den Leitungen und den tontaktflecken des Bauelementes hergestellt, die. einer vorher bestimmten Lage eines Leitungsrahmens angepaßt sind, auf dem einstückig eine Anzahl von Leitungen ausgebildet sind.When assembling or assembling semiconductor arrays, a Process step carried out, referred to as "contacting" or "bonding" will; thus the production of electrical connection through thin wires within meant the semiconductor device; in this way the pad or the contact pad of the semiconductor component by means of a thin metal wire, the for example made of gold (Au), aluminum (Al) or a similar material, connected with lines. The electrical connection is made using the metal wire made between the leads and the contact pads of the component, the. a predetermined position of a lead frame are adapted on the one-piece a number of lines are formed.

tiblicherweise wird das Bonden von Hand durchgeführt. Dazu muß eine Bedienungsperson von Hand einen Manipulator betätigen und eine Kapillare bewegen, während die jeweilige Kontaktlage durch ein Mikroskop überwacht und bestätigt wird. Da das Bonden durchgeführt wird, während gleichzeitig die t'berwachung der Yontaktlage erfolgt, hat dieser Verfahrensschritt einen unbefriedigenden Wirkungsgrad. Außerdem muß bei dem Bonden ein Mikroskop verwendet werden, so daß nur geschickte Personen dieses Verfahren durchführen können. Ein weiterer wesentlicher Nachteil liegt darin,daß die Bedienungspersonen relativ rasch ermüden. Usually the bonding is done by hand. To do this, one must Operator manually operate a manipulator and move a capillary, while the respective contact position is monitored and confirmed by a microscope. Since the bonding is carried out while at the same time monitoring the contact position takes place, this process step has an unsatisfactory efficiency. aside from that a microscope must be used in the bonding, so that only skilled persons be able to perform this procedure. Another major disadvantage is that the operators tire relatively quickly.

In Anbetracht dieser Nachteile der Hanefertigung ist versucht worden, die komplizierten, beim Bonden erforderlichen Verfahrensschritte zu autonzatisieren; zu diesem Zweck sind verschiedene Vorschläge gemacht und teilweise auch in die Praxis umgesetzt worden. Beim automatischen Bonden ist die Ausrichtung einer Anschlußfläche bzw.In view of these disadvantages of hemp manufacture, it has been attempted to automate the complicated process steps required during bonding; Various proposals have been made for this purpose, some of which have been put into practice implemented. In automatic bonding, the orientation of a pad is respectively.

eines Kontaktflecks mit einer Kapillaren von ausschlaggebender Be deutung. Um diese Allsrichtung zu erreichen, ist unter anderem ein Verfahren vorgeschlagen worden, bei dem eine Ausrichtungsmarkierung auf dem Bauelement ausgebildet wird, so daß die Ausrichtung durch die Feststellung dieser Markierungen durchgeführt werden kann.of a contact point with a capillary of crucial Be interpretation. In order to achieve this omnidirectional direction, a method is proposed, among other things in which an alignment mark is formed on the component, so that the alignment can be done by noting these marks can.

Halbleiter-Bauelemente werden jedoch im allgemeinen so ausgelegt, daß sich eine hohe Kompaktheit bzw. Packungsdichte und eine möglichst geringe Größe ergibt; es ist deshalb nicht zweckmäßig, das Bauelement zusätzlich mit einer Ausrichtungsmarkierung zu versehen, da die Anbringung der Ausrichtungsmarkierung zwangsläufig zu einer Vergrößerung des Bauelementes führt.However, semiconductor components are generally designed in such a way that that there is a high degree of compactness or packing density and the smallest possible size results; it is therefore not advisable to additionally mark the component with an alignment mark to be provided, as the application of the alignment mark inevitably leads to a Enlargement of the component leads.

Der Erfindung liegt deshalb die Aufgabe zugrunde, ein Halbleitersubstrat der angegebenen Gattung zu schaffen, das mit einer Markierung für das Bonden versehen werden kann, ohne die Größe des Substrates bzw. des Bauelementes zu erhöhen.The invention is therefore based on the object of a semiconductor substrate to create the specified type, provided with a marking for bonding can be without increasing the size of the substrate or the component.

Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß eine Lagemarkierung für das Bonden in wenigstens einem Elektrodenanschlußbereich definiert ist.This object is achieved according to the invention in that a position marker is defined for bonding in at least one electrode connection area.

Die mit der Erfindung erzielten Vorteile liegen insbesondere darin, daß in wenigstens einem Elektrodenanschlußbereich eines Halbleitersubstrats ( oder eines Halbleiter-#auele'.nentes) Markierungen angeordnet sind, mit denen sich die jeweils erforderliche Lage für die Durchführung des Bondens feststellen läßt; das Halbleitersubstrat weist mehrere Elektrodenanschlüsse (oder Anschlußflächen bzw. Kontaktflecke) auf, die auf seiner Oberfläche ausgebildet sind.The advantages achieved with the invention are, in particular, that in at least one electrode connection area of a semiconductor substrate (or of a semiconductor # auele'.nentes) markings are arranged with which the can be determined in each case required position for the implementation of the bonding; the Semiconductor substrate has several electrode connections (or connection surfaces or Pads) formed on its surface.

Die Erfindung schafft also ein Halbleitersubstrat mit einer Lagemarkierung für das Bonden, die in einer Anschlußfläche des Substrats definiert ist. Die Anordnung der Markierung nach der Erfindung erfordert keine Vergrößerung des Halbleitersubstrats, sondern stellt die Ausrichtung der Yontaktlage während des Bondens auf einfache und genaue Weise sicher.The invention thus creates a semiconductor substrate with a position marking for bonding defined in a pad of the substrate. The order the marking according to the invention does not require enlargement of the semiconductor substrate, but makes the alignment of the contact layer during bonding easy and accurate way for sure.

Die Erfindung wird im folgenden anhand von Ausführungsbeispielen unter Bezugnahme auf die beiliegenden, schematischen Zeichnungen näher erläutert.The invention is illustrated below with the aid of exemplary embodiments Explained in more detail with reference to the accompanying schematic drawings.

Es zeigen: Fig. 1 eine Draufsicht auf eine Ausführungsform eines Halbleitersubstrats gemäß der vorliegenden Erfindung; Fig. 2 und 3 weitere Draufsichten einer anderen Ausführungs form der Erfindung; Fig. 4, 6 und 8 Draufsichten von Ausführungsformen, wie ein Draht mit einer Anschlußfläche verbunden wird; und Fig. 5, 7 und 9 Querschnittsansichten der in den Fig. 4,6, bzw.1 shows a plan view of an embodiment of a semiconductor substrate according to the present invention; Figures 2 and 3 are further plan views of another Embodiment of the invention; 4, 6 and 8 plan views of embodiments, how to connect a wire to a pad; and Figures 5, 7 and 9 are cross-sectional views the one in Figs.

8 dargestellten Ausführungsformen. 8 illustrated embodiments.

In Fig. 1 ist eine Draufsicht des wesentlichen Teils eines Halbleitersubstrats gemäß der vorliegenden Erfindung dargestellt.In Fig. 1 is a plan view of the essential part of a semiconductor substrate illustrated in accordance with the present invention.

Das Halbleitersubstrat (Bauelement) 1 weist mehrere quadratische Anschlußflächen 2 mit einer Breite von ungefähr 100 - 120 micron auf, die längs des Timfangs des Substrats angeordnet sind. Die Anschlußflächen 2 werden durch Aufdampfen von Aluminium im Vakuum (~im allgemeinen über eine Siliziumdioxid-Schicht) hergestellt.The semiconductor substrate (component) 1 has a plurality of square connection surfaces 2 with a width of about 100-120 microns along the timeline of the Substrate are arranged. The pads 2 are by vapor deposition of aluminum produced in a vacuum (~ generally via a silicon dioxide layer).

Mit anderen Worten wird zunächst Aluminium durch Aufdampfen im Vakuum auf dem Halbleitersubstrat abgelagert; außer den Anschlußflächen und den Zwischenverbindungsbereichen werden unerwünschte Bereiche entfernt, indem eine Ätzbehandlung durchgeführt wird;dazu kann beispielsweise eine Photogravüretechnik eingesetzt werden.In other words, aluminum is first made by vapor deposition in a vacuum deposited on the semiconductor substrate; except for the pads and interconnection areas unwanted areas are removed by performing an etching treatment; For example, a photo-engraving technique can be used.

Wird zu diesem Zeitpunkt gleichzeitig Aluminium mit einer kreuzförmigen Markierung entfernt, so läßt sich eine Lagemarkierung mit Kreuzform erhalten. Als Alternative hierzu kann zunächst eine Maske mit Kreuzform angebracht werden, um zu verhindern, daß Aluminium bei dem folgenden Aufdampfen im Vakuum auf diesen Bereich des Substrates abgelagert wird.At this point, aluminum is simultaneously used with a cross-shaped Mark removed, a position mark with a cross shape can be obtained. as As an alternative to this, a mask with a cross shape can first be attached to to prevent aluminum from being applied to this area during the subsequent vacuum deposition of the substrate is deposited.

Auf diese Weise kann im Bereich einer viereckigen Anschlußfläche 2 eine Markierung 3 in Kreuzform mit einer Breite von ungefähr 10 micron ausgebildet werden.In this way, in the area of a square connection surface 2 a mark 3 formed in a cross shape with a width of about 10 microns will.

Da die Lagemarkierung 3 in der Anschlußfläche 2 hergestellt wird, wie oben erwähnt wurde, kann eine Verschiebung einer jeden Anschlußfläche aus der üblichen Lage (d.h., aus der Lage, in der sich die Anschlußfläche befinden sollte) vor dem Bonden leicht mittels der Markierung 3 festgestellt werden; damit kann jede Anschlußfläche in der üblichen Lage ausgerichtet werden, indem eine Verschiebung, falls sie vorhanden ist, ausgeglichen wird; anschließend kann das Bonden in korrekter Weise durchgeführt werden.Since the position marking 3 is produced in the connection surface 2, as mentioned above, displacement of each pad out of the usual position (i.e. from the position in which the connection surface should be) can be easily ascertained by means of the marker 3 before bonding; everyone can do that Can be aligned in the usual position by a shift, if it is present, it is compensated; then the bonding can be carried out in a more correct manner Way to be carried out.

Gemäß der oben erwähnten Ausführungsform wird die Markierung 3 in der Anschlußfläche 2 angeordnet, so daß zu diesem Zweck keine spezifische Vergrößerung des Bauelementes erforderlich ist. Bei dem herkömmlichen Aufbau wird die Markierung so angeordnet, daß sie nicht in Kontakt mit anderen Mustern bzw. Markierungen kommt; andererseits muß die Markierung zusätzlich an einem Bauelement angebracht werden, das bereits eine hohe Dichte bzw. Yompaktheit und eine minimale Größe hat; dadurch wird zwangsläufig die Form oder die Größe des Bauelementes größer. Im Gegensatz hierzu wird bei der vorliegenden Erfindung die Markierung in der Anschlußfläche angeordnet, so daß das Bauelement nicht vergrößert werden muß.According to the above-mentioned embodiment, the marker 3 in the pad 2 arranged so that no specific enlargement for this purpose of the component is required. In the conventional structure, the marking arranged so that it does not come into contact with other patterns or markings; on the other hand, the marking must also be attached to a component, which already has a high density or compactness and a minimal size; through this the shape or the size of the component is inevitably larger. In contrast for this purpose, in the present invention, the marking in the connection surface arranged so that the component does not have to be enlarged.

Wenn die Markierung 3 in der Anschlußfläche 2 angeordnet ist, wird jedoch bei dem Halbleitersubstrat nach der vorliegenden Erfindung ein tJbergangs bzw. Verbindungsbereich des Drahtes zu der Anschlußfläche 2 kleiner. Sollte sich dadurch unter Umständen manchmal eine nachteilige Wirkung auf die Verbindung ergeben, so kann die Anschlußfläche 2, die sich an den Ecken des Bauelementes 1 befindet, größer gemacht werden, wie in Fig. 2 dargestellt ist; dadurch wird die Fläche des Markierungsbereichs im Innern der Anschlußfläche relativ kleiner. In diesem Fall steht den Anschlußflächen, die sich an den Ecken des Bauelementes befinden, ausreichend Raum zur Verfugung, um sich in Richtung auf die Ecken des Bauelementes zu vergrößern.When the marking 3 is arranged in the pad 2, is however, a transition in the semiconductor substrate according to the present invention or connection area of the wire to the connection surface 2 is smaller. Should this may sometimes have an adverse effect on the connection, so the connection surface 2, which is located at the corners of the component 1, can be made larger as shown in Fig. 2; this increases the area of the Marking area in the interior of the connection surface is relatively smaller. In this case is the connection surfaces that are located at the corners of the component, sufficient Space available to increase in the direction of the corners of the component.

Wenn zur Feststellung der Markierungen ein photoelektrisches Mikroskop verwendet wird, so ist ein Grenzabschnitt für helle und dunkle Bereiche wesentlich; es muß also in dem Abtastbereich eine Grenzlinie für helle und dunkle Bereiche vorgesehen werden, die sich aus der Markierung ergibt. Aus diesem Grund muß die Anschlußfläche, die mit der Markierung versehen werden soll, größer gemacht werden. Dies läßt sich dadurch erreichen, daß auch in diesem Fall die Anschlußflächen an den Ecken des Bauelementes innerhalb des kritischen Größenbereiches relativ zu den anderen Anschlußflächen so groß wie möglich gemacht werden. Weiterhin werden manchmal die Anschlußflächen auch als Energiezuführung oder Ausgangsklemmen verwendet; diese Anschlußflächen werden dann größer ausgebildet als die anderen Anschlußflächen, so daß in diesem Fall die Markierungen an den größeren Anschlußflächen angeordnet werden können.When using a photoelectric microscope to determine the markings is used, a boundary portion is essential for light and dark areas; a boundary line for light and dark areas must therefore be provided in the scanning area resulting from the marking. For this reason, the connection surface, which is to be provided with the marking should be made larger. This can be achieve that in this case, too, the pads at the corners of the Component within the critical size range relative to the other pads are made as large as possible. Continue to be sometimes the pads are also used as power supply or output terminals; these pads are then made larger than the other pads, so that in this case the markings are arranged on the larger pads can be.

Selbstverständlich ist die Form der Markierung bei der vorliegenden Erfindung nicht auf die Kreuzform beschränkt, wie sie bei der obigen Ausführungsform beschrieben wurde. Es können in gleicher Weise auch andere Formen eingesetzt werden, wie beispielsweise eine L-Form, eine Form, die durch zwei sich kreuzende Linien definiert ist, eine viereckige bzw. quadratische Form, eine Kreisform, usw.; die jeweils ausgewählte Form muß nur die Bedingung erfüllen, daß ihre Abbildung in ausreichender Weise festgestellt werden kann.It goes without saying that the shape of the marking is in the present case Invention not limited to the cross shape as in the above embodiment has been described. Other shapes can be used in the same way, such as an L-shape, a shape created by two intersecting lines is defined, a square shape, a circular shape, etc .; the each selected form only has to meet the condition that its mapping is sufficient Way can be determined.

Da üblicherweise der Leitungsrahmen, auf dem das Halblitersubstrat montiert ist, im allgemeinen nur wenige Fehler in seiner Richtung O-aufweist, wenn er zur Durchführung des Bondens angebracht wird, gibt es kaum Probleme für das Bonden. Wenn keine Ausrichtung relativ zu der Richtung o in einem solchen Fall erforderlich ist, wie oben erwähnt wurde, kann die Kompensation bzw. der Ausgleich der Lage einer Anschlußfläche in Bezug auf die X-vnd Y-Richtungen, wie in Fig. 2 dargestellt ist, ausreichend genau vorgenommen werden, indem eine einzige Markierung verwendet wird.Since usually the lead frame on which the half liter substrate is mounted, generally has few errors in its O-direction, if it is attached to perform the bonding, there are hardly any problems for the bonding. If no alignment relative to the direction o is required in such a case is, as mentioned above, the compensation or the compensation of the position of a Pad with respect to the X and Y directions, as shown in Fig. 2, be made sufficiently accurate using a single marking.

In Fig. 3 ist ein weiteres Verfahren dargestellt, eine Markierung an einer kleinen Anschlußfläche anzuordnen. Bei diesem Verfahren wird die Markierung 3 in zwei Markierungsbereiche eingeteilt, d.h., beispielsweise eine Markierung 3x in die X-Richtung und eine Markierung 3y in die Y-Richtung; jede der Markierungen 3x und 3y wird jeweils in getrennten Anschlußflächen 2a und 2b angeordnet. In dieser Weise kann die Fläche der Markierunge 3x oder 3y, die in der ;Fläche der Anschlußflächen 2a oder 2b liegen, minimal gemacht werden. Deshalb kann sogar dann die für das Bonden zur Verfügung stehende Oberfläche ausreichend groß gemacht werden, wenn diese Oberfläche die Markierung etwas überlappt oder überdeckt. Diese Ausgestaltung der Anschlußfläche ist in den Fig. 4 bis 7 unter die~ ser Bedingung dargestellt.In Fig. 3, a further method is shown, a marking to be arranged on a small pad. In this process, the marking 3 divided into two marking areas, i.e., for example a marking 3x in the X direction and a mark 3y in the Y direction; each of the marks 3x and 3y are arranged in separate pads 2a and 2b, respectively. In this way can be the area of the marking 3x or 3y, which is in the; area of the connection surfaces 2a or 2b are minimized. Therefore, even then, it can be used for bonding available surface can be made sufficiently large if this surface the marking slightly overlaps or covers. This configuration of the connection surface is shown in FIGS. 4 to 7 under this condition.

In Fig. 4 ist eine Draufsicht einer Anschlußfläche mit einer kreuz, förmigen Markierung gezeigt, die einstückig mit der Anschlußfläche ausgebildet ist; diese Markierung soll sowohl in ihrer X#-Richtung als auch in ihrer Y-Richtung festgestellt werden. Ein Draht wird mit der Anschlußfläche mittels eines Verfahrens verbunden, das als ~,Nagelkopf-Bonden'1 (oder manchmal auch als "rugel-Ponden") bezeichnet wird; dabei wird die Spitze des Drahtes zu einer Kugel form zerdrückt bzw. geschlagen und anschließerd mit der Anschlußfläche kontaktiert.In Fig. 4 is a plan view of a connection surface with a cross, Shaped mark shown which is formed integrally with the terminal surface; this marking should be determined both in its X # direction and in its Y direction will. A wire is connected to the pad using a process this is referred to as ~ 'nail head bonding'1 (or sometimes also as "rugel-Ponden") will; the tip of the wire is crushed or beaten to form a ball and then contacted with the pad.

Fig. 5 stellt eine Querschnittsansicht der Anschlußfläche und des Drahtes nach Fig. 4 dar.Fig. 5 illustrates a cross-sectional view of the pad and the Wire according to Fig. 4.

Fig. 6 zeigt eine Draufsicht der Anschlußfläche 2b mit einer der beiden geteilten Markierungen (Markierung 3y) einer Markierung dar, die in ihrer X und Y-Richtung festgestellt werden soll;, damit wird ein Draht mittels Nagelkopf-Bonden verbunden; Fig. 7 stellt eine Querschnittsansicht dar.Fig. 6 shows a plan view of the connection surface 2b with one of the two split markings (mark 3y) of a mark, which in their X and Y-direction is to be determined; so that a wire is bonded by means of nail head tied together; Fig. 7 is a cross-sectional view.

Wie sich aus einem Vergleich der Figuren 4 und 5 mit den Figuren 6 und 7 ergibt, hat die in den zuletzt erwähnten Figuren dargestellte Anschlußfläche einen größeren Kontaktbereich als die in den zuerst erwähnten gezeigte Anschlußfläche.As can be seen from a comparison of FIGS. 4 and 5 with FIGS and 7 results, has the connection surface shown in the last-mentioned figures a larger contact area than the pad shown in the first mentioned.

Dies gilt auch für den Fall, bei dem das Bonden des Drahtes mit der Anschlußfläche durch ein Verfahren durchgeführt wird, das als "Heft- Bonden" ("stich bonding method") bezeichnet wird; dabei wird das Bonden durchgeführt, während die Seitenoberfläche des Drahtes zerdrückt bzw. zerschlagen wird. In diesem Fall schneidet sich zw#ckmäßigerweise eine longitudinale Richtung A der Markierung mit einer longitudinalen Richtung B des Kontaktbereichs, und zwar nach einer bevorzugten Ausführungsform kreuzweise, wie in Figuren 8 und 9 dargestellt ist. Im Falle einer kreuzförmigen Markierung können auch die longitudinale Richtung der Markierungsabschnitte 3x und 3y der Markierung 3 so angeordnet werden, daß sie die longitudinale r.ichtung des Kontaktbereichs schneiden bzw. kreuzen.This also applies to the case where the wire is bonded to the Pad is performed by a process known as "stapling Bonding " ("stich bonding method"); the bonding is carried out while the side surface of the wire is crushed or smashed. In this case expediently intersects a longitudinal direction A of the marking a longitudinal direction B of the contact area, namely according to a preferred one Embodiment crosswise, as shown in FIGS. 8 and 9. In case of a Cross-shaped marking can also indicate the longitudinal direction of the marking sections 3x and 3y of the marker 3 are arranged so that they are the longitudinal r. Direction cut or cross the contact area.

Um eine ausreichende Festigkeit des Kontaktes beizubehalten, sollte die Breite der Anschlußfläche im wesentlichen gleich der des Kontaktbereichs gemacht werden, d.h., des zerdrückten Abschnittes der Spitze der Leitung, die mit der Oberfläche des Halbleiterchips in Kontakt kommt.In order to maintain sufficient strength of the contact, should the width of the pad is made substantially equal to that of the contact area i.e., the crushed portion of the tip of the conduit that comes with the surface of the semiconductor chip comes into contact.

Die Breite der Anschlußflächen liegt im allgemeinen im Bereich von ungefähr 100 bis 120 micron. Bei der Durchführung des Bondens mit den herkömmlichen Anschlußflächen hat sich herausgestellt, daß eine ausreichende Festigkeit für das Bonden dann sichergestellt ist, wenn wenigstens eine Hälfte des oben erwähnten Kontaktbereichs mit der Anschlußfläche verbunden wird. Aus diesem Grunde sollte die Fläche der Markierung fm Innern der Anschlußfläche so ausgelegt werden, daß sie diese Anforderung erfüllt.The width of the pads is generally in the range of about 100 to 120 microns. When performing the bonding with the conventional Terminal surfaces have been found to have sufficient strength for the Bonding is ensured when at least one half of the contact area mentioned above is connected to the pad. Because of this, the area of the marking should be The inside of the connection surface must be designed in such a way that it meets this requirement.

Gemäß der vorliegenden Erfindung wird als für die Durchführung des Bondens eine Lagemarkierung in einer Anschlußfläche eines Halbleitersubstrats angeordnet, so daß keine unerwünschte Vergrößerung des Halbleitersubstrats wegen dieser Markierung erforderlich ist.According to the present invention, as for performing the Bonding a position marking arranged in a connection surface of a semiconductor substrate, so that no undesired enlargement of the semiconductor substrate because of this marking is required.

Deshalb können also mehrere Halbleitersubstrate von einem einzigen Scheibchen oder Wafer gefertigt werden, so daß sich die Produktionskosten senken lassen.Therefore, several semiconductor substrates can be made from a single one Discs or wafers are manufactured, so that the production costs are reduced permit.

In den Figuren bezeichnen die Bezugszeichen im einzelnen folgende Teile: 1 ..... Halbleitersubstrat (Bauelement) 2 Anschlußfläche bzw. Kontaktfleck 2a .... Anschlußfläche, die mit einer Markierung zur Feststellung ihrer X-Richtung versehen ist 2b .... Anschlußfläche, die mit einer Markierung zur Feststellung ihrer Y-Richtung versehen ist 3 ..... Markierung 3x .... Markierung zur Feststellung der Richtung 3y .... Markierung zur Feststellung der Y-Richtung 4 ..... Draht, der mit einer Anschlußfläche durch Nagelkopf-Bonden verbunden wird 5 ..... Draht, der mit einer Anschlußfläche durch Heft-Bonden verbunden wird.In the figures, the reference symbols denote the following in detail Parts: 1 ..... semiconductor substrate (component) 2 connection area or contact pad 2a .... pad with a marking to determine its X-direction is provided 2b .... pad, which is marked with a marking to determine their Y-direction is provided 3 ..... marking 3x .... marking to determine the Direction 3y .... Marking to determine the Y direction 4 ..... wire that goes with a connection surface is connected by nail head bonding 5 ..... wire that is connected to a pad is connected by tack-bonding.

Patentansprüche Claims

Claims (6)

Patentansprüche 3 Halbleitersubstrat mit mehreren, auf seiner Oberfläche angecrdneten Elcktrodenanschlüssen, dadurch g e k e n n z e i c h -n e t, daß in wenigstens einem Elektrodenanschlußbereich (2, 2a,2b) eine Lagemarkierung (3,3x,3y) für das Bonden definiert ist. Claims 3 semiconductor substrate with several on its surface connected electrode connections, so that in at least one electrode connection area (2, 2a, 2b) a position marker (3,3x, 3y) for bonding is defined. 2. Halbleitersubstrat nach Anspruch 1, dadurch gekennzeichnet, daß die Lagemarkierung (3,3x,3y) Kreuzform hat. 2. Semiconductor substrate according to claim 1, characterized in that the position marker (3.3x, 3y) has a cross shape. 3. Halbleitersubstrat nach Anspruch 1, dadurch gekennzeichnet, daß die Lagemarkierung in wenigstens zwei Markierungsabschnit te (3x,3y) aufgeteilt und jeweils in wenigstens zwei der Elektrodenanschlußbereiche (2,2a,2b) definiert ist. 3. Semiconductor substrate according to claim 1, characterized in that the position marker divided into at least two marker sections (3x, 3y) and each defined in at least two of the electrode connection areas (2, 2a, 2b) is. 4. Halbleitersubstrat nach Anspruch 3, dadurch gekennzeichnet, daß die Lagemarkierung in wenigstens zwei Markierungsabschnitte (3x,3y) eingeteilt ist, um als Lagemarkierung für die X-Richtung bzw. als Lagemarkierung für die Y-Richtung zu wirken. 4. Semiconductor substrate according to claim 3, characterized in that the position marking is divided into at least two marking sections (3x, 3y), as a position marker for the X direction or as a position marker for the Y direction to act. 5. Verfahren zum Bonden eines Drahtes auf einen Bereich einer Anschlußfläche, dadurch gekennzeichnet, daß in der Anschlußfläche (2,2a,2b) eine Lagemarkierung (3,3x,3y) für das Bonden vorgesehen wird. 5. A method of bonding a wire to an area of a pad, characterized in that a position marking in the connection surface (2, 2a, 2b) (3,3x, 3y) is provided for bonding. 6. Verfahren zum Bonden eines Drahtes an einer Anschlußfläche nach anspruch 5, dadurch gekennzeichnet, daß die Fläche des mit der Anschlußfläche (2,2a,2b) verbundenen Drahtes nahezu gleich oder größer als die Fläche der Lagemarkierung (3,3x,3y) ist, die mit Draht bedeckt ist.6. Method for bonding a wire to a pad according to claim 5, characterized in that the surface of the connecting surface (2, 2a, 2b) connected wire almost equal to or larger than the area of the position marking (3,3x, 3y) covered with wire.
DE19752543651 1974-09-30 1975-09-30 Integrated circuit semiconductor substrate - has position marks on its surface for contacting of electrode terminals Pending DE2543651A1 (en)

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JP49111469A JPS5138969A (en) 1974-09-30 1974-09-30

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477826A (en) * 1979-07-04 1984-10-16 Westinghouse Brake & Signal Co. Ltd. Arrangement for aligning and attaching a shim to a semiconductor element
US4642672A (en) * 1982-09-14 1987-02-10 Nec Corporation Semiconductor device having registration mark for electron beam exposure
DE19632116A1 (en) * 1996-08-08 1998-02-12 Siemens Ag Semiconductor chip identification device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5499226U (en) * 1977-12-23 1979-07-13
JPS5715435A (en) * 1980-06-30 1982-01-26 Nec Home Electronics Ltd Substrate for semiconductor device
JPS60134616A (en) * 1983-12-23 1985-07-17 Toshiba Corp Diaphragm type piezoelectric resonator

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5123078A (en) * 1974-08-20 1976-02-24 Matsushita Electronics Corp Handotaisoshino denkyokukozo

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477826A (en) * 1979-07-04 1984-10-16 Westinghouse Brake & Signal Co. Ltd. Arrangement for aligning and attaching a shim to a semiconductor element
US4642672A (en) * 1982-09-14 1987-02-10 Nec Corporation Semiconductor device having registration mark for electron beam exposure
DE19632116A1 (en) * 1996-08-08 1998-02-12 Siemens Ag Semiconductor chip identification device

Also Published As

Publication number Publication date
JPS5138969A (en) 1976-03-31

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