GB699050A - Transistors, and their method of manufacture - Google Patents

Transistors, and their method of manufacture

Info

Publication number
GB699050A
GB699050A GB21110/51A GB2111051A GB699050A GB 699050 A GB699050 A GB 699050A GB 21110/51 A GB21110/51 A GB 21110/51A GB 2111051 A GB2111051 A GB 2111051A GB 699050 A GB699050 A GB 699050A
Authority
GB
United Kingdom
Prior art keywords
slab
semi
conductor
rib
whisker
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21110/51A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GTE Sylvania Inc
Original Assignee
Sylvania Electric Products Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sylvania Electric Products Inc filed Critical Sylvania Electric Products Inc
Publication of GB699050A publication Critical patent/GB699050A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Element Separation (AREA)

Abstract

699,050. Semi-conductor amplifiers. SYLVANIA ELECTRIC PRODUCTS, Inc. Sept. 6, 1951 [Sept. 9, 1950], No. 21110/50. Class 40 (iv). A transistor comprises a body of semi-conductor material incorporating an upstanding rib 10a between laterally extending surfaces on a base portion 10, a large area electrode on the body and a pair of whiskers engaging the inside corners of the rib from opposite sides. Fig. 5 shows the completed assembly in which the contact pressure of the whisker electrodes may be adjusted by varying the position of pins 28 in insulating plugs 30. The base electrode is formed by metal plug 24. An inspection window 26c facilitates adjustment, the two whisker electrodes preferably being placed directly opposite each other. Fig. 6 shows an alternative arrangement comprising a third whisker electrode similarly placed in the inside corner formed by the end face of the rib portion 10a<SP>1</SP>. The shaped semi-conductor body may be produced by sticking a slab of semi-conductor material on to a support, and cutting the slab into a number of square portions by making crossed sets of parallel cuts through the slab with a diamond wheel. With the material still stuck to the slab, pairs of grooves of equal depth are then cut into the material with diamond wheels 16a, 16b, as shown in Fig. 3, to produce the ribbed portions. N-type germanium may be used and the cut elements etched in a solution of hydrofluoric acid, nitric acid and cupric nitrate.
GB21110/51A 1950-09-09 1951-09-06 Transistors, and their method of manufacture Expired GB699050A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US699050XA 1950-09-09 1950-09-09

Publications (1)

Publication Number Publication Date
GB699050A true GB699050A (en) 1953-10-28

Family

ID=22091930

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21110/51A Expired GB699050A (en) 1950-09-09 1951-09-06 Transistors, and their method of manufacture

Country Status (2)

Country Link
FR (1) FR1042048A (en)
GB (1) GB699050A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027320B (en) * 1953-12-30 1958-04-03 Ibm Deutschland Tip transistor, the semiconductor surface of which is partially worn away by a small amount of thickness
DE1074759B (en) * 1954-11-02 1960-02-04 Pye Limited, Cambridge (Grossbritannien) Process for the production of a junction transistor and a junction transistor produced according to this method
DE1092132B (en) * 1958-07-25 1960-11-03 Rca Corp Method for dividing a semiconductor wafer into the smaller semiconductor bodies of semiconductor arrangements
DE1142420B (en) * 1958-06-10 1963-01-17 Associated Electrical Ind Wool Method for producing platelet-shaped semiconductor bodies for semiconductor components from a single semiconductor crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1027320B (en) * 1953-12-30 1958-04-03 Ibm Deutschland Tip transistor, the semiconductor surface of which is partially worn away by a small amount of thickness
DE1074759B (en) * 1954-11-02 1960-02-04 Pye Limited, Cambridge (Grossbritannien) Process for the production of a junction transistor and a junction transistor produced according to this method
DE1142420B (en) * 1958-06-10 1963-01-17 Associated Electrical Ind Wool Method for producing platelet-shaped semiconductor bodies for semiconductor components from a single semiconductor crystal
DE1092132B (en) * 1958-07-25 1960-11-03 Rca Corp Method for dividing a semiconductor wafer into the smaller semiconductor bodies of semiconductor arrangements

Also Published As

Publication number Publication date
FR1042048A (en) 1953-10-28

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