GB783520A - Improvements in or relating to transistors - Google Patents
Improvements in or relating to transistorsInfo
- Publication number
- GB783520A GB783520A GB12319/54A GB1231954A GB783520A GB 783520 A GB783520 A GB 783520A GB 12319/54 A GB12319/54 A GB 12319/54A GB 1231954 A GB1231954 A GB 1231954A GB 783520 A GB783520 A GB 783520A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junctions
- base electrode
- cuts
- collectors
- emitters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Abstract
783,520. Transistors. PHILIPS ELECTRICAL INDUSTRIES, Ltd. April 28, 1954 [May 1, 1953], No. 12319/54. Class 37. A transistor comprises a semi-conductor body with a base electrode on one face and emittor(s) and collector(s) formed of impurity materials which are partly diffused into the opposite face to form PN junctions, wherein at least one of the emitters or collectors is in electrical contact with the body only at its periphery. Body 1 of N-type Ge (Fig. 3) with a base electrode 2 is formed with parallel saw-cuts 8 in its upper face upon which strips 9 of In, which in the complete transistor are alternately connected as emitter and collector respectively are melted. The cuts are partly filled with solid insulating material, e.g. SiO 2 , to prevent the In from filling then, PN junctions being formed on each side of the cut as shown (Fig. 4). Alternatively the In strips are fused to the surface on lines parallel to a series of long holes drilled just beneath the surface. In another modification a series of holes perpendicular to the base may be drilled downwards to extend as far as or right through the base electrode, and a blob of In fused to and around the top of each hole, the blobs being alternately connected as emitters and collectors. In all cases where the holes or saw-cuts open on the external surface of the completed device the junctions may be cleared by etching.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL178034 | 1953-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB783520A true GB783520A (en) | 1957-09-25 |
Family
ID=19750606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB12319/54A Expired GB783520A (en) | 1953-05-01 | 1954-04-28 | Improvements in or relating to transistors |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US2827599A (en) |
| BE (1) | BE527382A (en) |
| DE (1) | DE1770266U (en) |
| FR (1) | FR1099770A (en) |
| GB (1) | GB783520A (en) |
| NL (1) | NL85504C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1073111B (en) * | 1954-12-02 | 1960-01-14 | Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen | Method for producing a flat transistor with a surface layer of increased concentration of impurities at the free points between the electrodes on a single-crystal semiconductor body |
| US3063129A (en) * | 1956-08-08 | 1962-11-13 | Bendix Corp | Transistor |
| US2959718A (en) * | 1957-04-08 | 1960-11-08 | Int Rectifier Corp | Rectifier assembly |
| US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
| US3443173A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | Narrow emitter lateral transistor |
| US3579059A (en) * | 1968-03-11 | 1971-05-18 | Nat Semiconductor Corp | Multiple collector lateral transistor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
-
0
- BE BE527382D patent/BE527382A/xx unknown
- NL NL85504D patent/NL85504C/xx active
-
1954
- 1954-04-19 US US424173A patent/US2827599A/en not_active Expired - Lifetime
- 1954-04-28 DE DEN4154U patent/DE1770266U/en not_active Expired
- 1954-04-28 GB GB12319/54A patent/GB783520A/en not_active Expired
- 1954-04-29 FR FR1099770D patent/FR1099770A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2827599A (en) | 1958-03-18 |
| FR1099770A (en) | 1955-09-09 |
| BE527382A (en) | |
| DE1770266U (en) | 1958-07-17 |
| NL85504C (en) |
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