CA952628A - Semiconductor structure and method - Google Patents

Semiconductor structure and method

Info

Publication number
CA952628A
CA952628A CA911,827A CA911827A CA952628A CA 952628 A CA952628 A CA 952628A CA 911827 A CA911827 A CA 911827A CA 952628 A CA952628 A CA 952628A
Authority
CA
Canada
Prior art keywords
semiconductor structure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA911,827A
Inventor
David A. Maxwell
David F. Allison
Albert P. Youmans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Application granted granted Critical
Publication of CA952628A publication Critical patent/CA952628A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • H10D88/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • H10W15/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
CA911,827A 1963-12-16 1964-09-16 Semiconductor structure and method Expired CA952628A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33069763A 1963-12-16 1963-12-16
US33880264A 1964-01-20 1964-01-20

Publications (1)

Publication Number Publication Date
CA952628A true CA952628A (en) 1974-08-06

Family

ID=26987403

Family Applications (1)

Application Number Title Priority Date Filing Date
CA911,827A Expired CA952628A (en) 1963-12-16 1964-09-16 Semiconductor structure and method

Country Status (6)

Country Link
BE (1) BE657077A (en)
CA (1) CA952628A (en)
DE (1) DE1439485A1 (en)
FR (1) FR1421618A (en)
GB (1) GB1061060A (en)
NL (1) NL6411895A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1439760B2 (en) * 1964-12-19 1976-06-24 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm TRANSISTOR AND PROCESS FOR ITS MANUFACTURING
NL7001607A (en) * 1970-02-05 1971-08-09
US3954522A (en) * 1973-06-28 1976-05-04 Motorola, Inc. Integrated circuit process
US3875413A (en) * 1973-10-09 1975-04-01 Hewlett Packard Co Infrared radiation source

Also Published As

Publication number Publication date
GB1061060A (en) 1967-03-08
FR1421618A (en) 1965-12-17
NL6411895A (en) 1965-06-17
BE657077A (en) 1965-04-01
DE1439485A1 (en) 1968-11-28

Similar Documents

Publication Publication Date Title
IL22370A (en) Semiconductor devices and methods for their manufacture
CA667423A (en) Semiconductor device and method of manufacture
CA952628A (en) Semiconductor structure and method
CA664317A (en) Semiconductor device and method of making same
CA668947A (en) Semiconductor electrodes and method
CA673797A (en) Semiconductor and method of making the same
CA669920A (en) Semi-conductor devices and methods for their manufacture
CA663402A (en) Semiconductor devices and method of making the same
CA655493A (en) N-type semiconductors and method of manufacture
CA655410A (en) Method of making semiconductor units and the like
CA675587A (en) Photo-mountings and method and manufacture
CA664504A (en) Anthelmintic distilbazoles and method
AU285460B2 (en) Semiconductor devices and method of manufacture thereof. v
AU285665B2 (en) Electroprinting method and means
CA668270A (en) Semiconductor devices and method of making same
AU278956B2 (en) Method and means for forming semi - conductor contacts
CA674842A (en) Inhibit logic means and method
CA668257A (en) Semiconductor devices and methods of making them
CA668561A (en) Semiconductor devices and methods of making them
AU284543B2 (en) Semiconductor element and method of making same
AU282642B2 (en) Semiconductor element and method of making same
AU5089064A (en) Semiconductor devices and method of manufacture thereof. v
CA657818A (en) 3-ethylheptanol-1 and 3-ethylhexanol-1
AU3296563A (en) Electroprinting method and means
AU284047B2 (en) Electrodialysis-cell and method of operation