ATE66093T1 - Aetzverfahren. - Google Patents

Aetzverfahren.

Info

Publication number
ATE66093T1
ATE66093T1 AT86305068T AT86305068T ATE66093T1 AT E66093 T1 ATE66093 T1 AT E66093T1 AT 86305068 T AT86305068 T AT 86305068T AT 86305068 T AT86305068 T AT 86305068T AT E66093 T1 ATE66093 T1 AT E66093T1
Authority
AT
Austria
Prior art keywords
reducing environment
etch process
lurnineting
opto
ultra
Prior art date
Application number
AT86305068T
Other languages
English (en)
Inventor
John Haigh
Martin Richard Aylett
Original Assignee
British Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecomm filed Critical British Telecomm
Application granted granted Critical
Publication of ATE66093T1 publication Critical patent/ATE66093T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Saccharide Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Magnetic Heads (AREA)
AT86305068T 1985-07-04 1986-06-30 Aetzverfahren. ATE66093T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB858516984A GB8516984D0 (en) 1985-07-04 1985-07-04 Etching method
EP86305068A EP0209288B1 (de) 1985-07-04 1986-06-30 Ätzverfahren

Publications (1)

Publication Number Publication Date
ATE66093T1 true ATE66093T1 (de) 1991-08-15

Family

ID=10581807

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86305068T ATE66093T1 (de) 1985-07-04 1986-06-30 Aetzverfahren.

Country Status (7)

Country Link
US (1) US4705593A (de)
EP (1) EP0209288B1 (de)
JP (1) JPH0628255B2 (de)
AT (1) ATE66093T1 (de)
CA (1) CA1275613C (de)
DE (1) DE3680724D1 (de)
GB (1) GB8516984D0 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731158A (en) * 1986-09-12 1988-03-15 International Business Machines Corporation High rate laser etching technique
IL84255A (en) * 1987-10-23 1993-02-21 Galram Technology Ind Ltd Process for removal of post- baked photoresist layer
US4997520A (en) * 1988-06-10 1991-03-05 Texas Instruments Incorporated Method for etching tungsten
US4962057A (en) * 1988-10-13 1990-10-09 Xerox Corporation Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth
JPH0828498B2 (ja) * 1989-10-02 1996-03-21 株式会社東芝 半導体素子とその製造方法
US5380398A (en) * 1992-11-25 1995-01-10 At&T Bell Laboratories Method for selectively etching AlGaAs
US5735451A (en) * 1993-04-05 1998-04-07 Seiko Epson Corporation Method and apparatus for bonding using brazing material
AU7682594A (en) * 1993-09-08 1995-03-27 Uvtech Systems, Inc. Surface processing
US5814156A (en) * 1993-09-08 1998-09-29 Uvtech Systems Inc. Photoreactive surface cleaning
JP3312377B2 (ja) * 1993-12-09 2002-08-05 セイコーエプソン株式会社 ろう材による接合方法及び装置
JP3700177B2 (ja) 1993-12-24 2005-09-28 セイコーエプソン株式会社 大気圧プラズマ表面処理装置
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US6006763A (en) * 1995-01-11 1999-12-28 Seiko Epson Corporation Surface treatment method
JP3521587B2 (ja) * 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
JPH08279495A (ja) * 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
WO1996031997A1 (fr) * 1995-04-07 1996-10-10 Seiko Epson Corporation Equipement de traitement de surface
JP3598602B2 (ja) * 1995-08-07 2004-12-08 セイコーエプソン株式会社 プラズマエッチング方法、液晶表示パネルの製造方法、及びプラズマエッチング装置
JPH09233862A (ja) * 1995-12-18 1997-09-05 Seiko Epson Corp 圧電体を用いた発電方法、発電装置および電子機器
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
AUPN736195A0 (en) * 1995-12-29 1996-01-25 Pacific Solar Pty Limited Improved laser grooving method
JPH09312545A (ja) 1996-03-18 1997-12-02 Seiko Epson Corp 圧電素子、その製造方法、及び圧電振動片のマウント装置
US5918354A (en) * 1996-04-02 1999-07-06 Seiko Epson Corporation Method of making a piezoelectric element
US5847390A (en) * 1996-04-09 1998-12-08 Texas Instruments Incorporated Reduced stress electrode for focal plane array of thermal imaging system and method
US5824206A (en) * 1996-06-28 1998-10-20 The United States Of America As Represented By The Secretary Of The Air Force Photoelectrochemical etching of p-InP
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
US6165273A (en) 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6080987A (en) * 1997-10-28 2000-06-27 Raytheon Company Infrared-sensitive conductive-polymer coating
US6083557A (en) * 1997-10-28 2000-07-04 Raytheon Company System and method for making a conductive polymer coating
US6136210A (en) * 1998-11-02 2000-10-24 Xerox Corporation Photoetching of acoustic lenses for acoustic ink printing
US7009704B1 (en) * 2000-10-26 2006-03-07 Kla-Tencor Technologies Corporation Overlay error detection
JP4643889B2 (ja) * 2001-03-22 2011-03-02 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド レーザ加工システム及び方法
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
US6936546B2 (en) * 2002-04-26 2005-08-30 Accretech Usa, Inc. Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates
KR100450128B1 (ko) * 2002-06-20 2004-09-30 동부전자 주식회사 반도체 소자의 제조 방법
WO2005043701A1 (en) * 2003-10-31 2005-05-12 Bookham Technology Plc Method for manufacturing gratings in semiconductor materials
CN112805252B (zh) * 2018-08-08 2023-04-04 康宁股份有限公司 用于光纤的卤素掺杂二氧化硅预制件的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3095341A (en) * 1961-06-30 1963-06-25 Bell Telephone Labor Inc Photosensitive gas phase etching of semiconductors by selective radiation
JPS5835364B2 (ja) * 1977-04-07 1983-08-02 富士通株式会社 プラズマエッチング方法
JPS5990930A (ja) * 1982-11-17 1984-05-25 Toshiba Corp ドライエツチング方法及び装置
JPS59141233A (ja) * 1983-02-02 1984-08-13 Nec Corp 半導体装置の製造方法
JPS59165422A (ja) * 1983-03-10 1984-09-18 Agency Of Ind Science & Technol ドライプロセス装置
US4518456A (en) * 1983-03-11 1985-05-21 At&T Bell Laboratories Light induced etching of InP by aqueous solutions of H3 PO4
US4624736A (en) * 1984-07-24 1986-11-25 The United States Of America As Represented By The United States Department Of Energy Laser/plasma chemical processing of substrates

Also Published As

Publication number Publication date
CA1275613C (en) 1990-10-30
EP0209288B1 (de) 1991-08-07
JPS6218035A (ja) 1987-01-27
DE3680724D1 (de) 1991-09-12
EP0209288A1 (de) 1987-01-21
GB8516984D0 (en) 1985-08-07
JPH0628255B2 (ja) 1994-04-13
US4705593A (en) 1987-11-10

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