DE3680724D1 - Aetzverfahren. - Google Patents
Aetzverfahren.Info
- Publication number
- DE3680724D1 DE3680724D1 DE8686305068T DE3680724T DE3680724D1 DE 3680724 D1 DE3680724 D1 DE 3680724D1 DE 8686305068 T DE8686305068 T DE 8686305068T DE 3680724 T DE3680724 T DE 3680724T DE 3680724 D1 DE3680724 D1 DE 3680724D1
- Authority
- DE
- Germany
- Prior art keywords
- reducing environment
- action process
- lurnineting
- opto
- ultra
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB858516984A GB8516984D0 (en) | 1985-07-04 | 1985-07-04 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3680724D1 true DE3680724D1 (de) | 1991-09-12 |
Family
ID=10581807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686305068T Expired - Fee Related DE3680724D1 (de) | 1985-07-04 | 1986-06-30 | Aetzverfahren. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4705593A (de) |
EP (1) | EP0209288B1 (de) |
JP (1) | JPH0628255B2 (de) |
AT (1) | ATE66093T1 (de) |
CA (1) | CA1275613C (de) |
DE (1) | DE3680724D1 (de) |
GB (1) | GB8516984D0 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4731158A (en) * | 1986-09-12 | 1988-03-15 | International Business Machines Corporation | High rate laser etching technique |
IL84255A (en) * | 1987-10-23 | 1993-02-21 | Galram Technology Ind Ltd | Process for removal of post- baked photoresist layer |
US4997520A (en) * | 1988-06-10 | 1991-03-05 | Texas Instruments Incorporated | Method for etching tungsten |
US4962057A (en) * | 1988-10-13 | 1990-10-09 | Xerox Corporation | Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth |
JPH0828498B2 (ja) * | 1989-10-02 | 1996-03-21 | 株式会社東芝 | 半導体素子とその製造方法 |
US5380398A (en) * | 1992-11-25 | 1995-01-10 | At&T Bell Laboratories | Method for selectively etching AlGaAs |
US5735451A (en) * | 1993-04-05 | 1998-04-07 | Seiko Epson Corporation | Method and apparatus for bonding using brazing material |
US5814156A (en) * | 1993-09-08 | 1998-09-29 | Uvtech Systems Inc. | Photoreactive surface cleaning |
WO1995007152A1 (en) * | 1993-09-08 | 1995-03-16 | Uvtech Systems, Inc. | Surface processing |
JP3312377B2 (ja) * | 1993-12-09 | 2002-08-05 | セイコーエプソン株式会社 | ろう材による接合方法及び装置 |
JP3700177B2 (ja) | 1993-12-24 | 2005-09-28 | セイコーエプソン株式会社 | 大気圧プラズマ表面処理装置 |
US6015503A (en) * | 1994-06-14 | 2000-01-18 | Fsi International, Inc. | Method and apparatus for surface conditioning |
US5580421A (en) * | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
US5603848A (en) * | 1995-01-03 | 1997-02-18 | Texas Instruments Incorporated | Method for etching through a substrate to an attached coating |
US6006763A (en) * | 1995-01-11 | 1999-12-28 | Seiko Epson Corporation | Surface treatment method |
JPH08279495A (ja) * | 1995-02-07 | 1996-10-22 | Seiko Epson Corp | プラズマ処理装置及びその方法 |
JP3521587B2 (ja) * | 1995-02-07 | 2004-04-19 | セイコーエプソン株式会社 | 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法 |
WO1996031997A1 (fr) * | 1995-04-07 | 1996-10-10 | Seiko Epson Corporation | Equipement de traitement de surface |
JP3598602B2 (ja) * | 1995-08-07 | 2004-12-08 | セイコーエプソン株式会社 | プラズマエッチング方法、液晶表示パネルの製造方法、及びプラズマエッチング装置 |
JPH09233862A (ja) * | 1995-12-18 | 1997-09-05 | Seiko Epson Corp | 圧電体を用いた発電方法、発電装置および電子機器 |
US7025831B1 (en) | 1995-12-21 | 2006-04-11 | Fsi International, Inc. | Apparatus for surface conditioning |
AUPN736195A0 (en) * | 1995-12-29 | 1996-01-25 | Pacific Solar Pty Limited | Improved laser grooving method |
JPH09312545A (ja) | 1996-03-18 | 1997-12-02 | Seiko Epson Corp | 圧電素子、その製造方法、及び圧電振動片のマウント装置 |
US5918354A (en) * | 1996-04-02 | 1999-07-06 | Seiko Epson Corporation | Method of making a piezoelectric element |
US5847390A (en) * | 1996-04-09 | 1998-12-08 | Texas Instruments Incorporated | Reduced stress electrode for focal plane array of thermal imaging system and method |
US5824206A (en) * | 1996-06-28 | 1998-10-20 | The United States Of America As Represented By The Secretary Of The Air Force | Photoelectrochemical etching of p-InP |
US6165273A (en) | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
US6465374B1 (en) | 1997-10-21 | 2002-10-15 | Fsi International, Inc. | Method of surface preparation |
US6080987A (en) * | 1997-10-28 | 2000-06-27 | Raytheon Company | Infrared-sensitive conductive-polymer coating |
US6083557A (en) * | 1997-10-28 | 2000-07-04 | Raytheon Company | System and method for making a conductive polymer coating |
US6136210A (en) * | 1998-11-02 | 2000-10-24 | Xerox Corporation | Photoetching of acoustic lenses for acoustic ink printing |
US7009704B1 (en) * | 2000-10-26 | 2006-03-07 | Kla-Tencor Technologies Corporation | Overlay error detection |
ATE323569T1 (de) * | 2001-03-22 | 2006-05-15 | Xsil Technology Ltd | Ein laserbearbeitungssystem und -verfahren |
US20070066076A1 (en) * | 2005-09-19 | 2007-03-22 | Bailey Joel B | Substrate processing method and apparatus using a combustion flame |
US6936546B2 (en) * | 2002-04-26 | 2005-08-30 | Accretech Usa, Inc. | Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates |
KR100450128B1 (ko) * | 2002-06-20 | 2004-09-30 | 동부전자 주식회사 | 반도체 소자의 제조 방법 |
WO2005043701A1 (en) * | 2003-10-31 | 2005-05-12 | Bookham Technology Plc | Method for manufacturing gratings in semiconductor materials |
WO2020033199A1 (en) * | 2018-08-08 | 2020-02-13 | Corning Incorporated | Methods of making halogen doped silica preforms for optical fibers |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3095341A (en) * | 1961-06-30 | 1963-06-25 | Bell Telephone Labor Inc | Photosensitive gas phase etching of semiconductors by selective radiation |
JPS5835364B2 (ja) * | 1977-04-07 | 1983-08-02 | 富士通株式会社 | プラズマエッチング方法 |
JPS5990930A (ja) * | 1982-11-17 | 1984-05-25 | Toshiba Corp | ドライエツチング方法及び装置 |
JPS59141233A (ja) * | 1983-02-02 | 1984-08-13 | Nec Corp | 半導体装置の製造方法 |
JPS59165422A (ja) * | 1983-03-10 | 1984-09-18 | Agency Of Ind Science & Technol | ドライプロセス装置 |
US4518456A (en) * | 1983-03-11 | 1985-05-21 | At&T Bell Laboratories | Light induced etching of InP by aqueous solutions of H3 PO4 |
US4624736A (en) * | 1984-07-24 | 1986-11-25 | The United States Of America As Represented By The United States Department Of Energy | Laser/plasma chemical processing of substrates |
-
1985
- 1985-07-04 GB GB858516984A patent/GB8516984D0/en active Pending
-
1986
- 1986-06-26 CA CA000512502A patent/CA1275613C/en not_active Expired - Fee Related
- 1986-06-26 US US06/881,182 patent/US4705593A/en not_active Expired - Lifetime
- 1986-06-30 DE DE8686305068T patent/DE3680724D1/de not_active Expired - Fee Related
- 1986-06-30 EP EP86305068A patent/EP0209288B1/de not_active Expired
- 1986-06-30 AT AT86305068T patent/ATE66093T1/de active
- 1986-07-01 JP JP61155889A patent/JPH0628255B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE66093T1 (de) | 1991-08-15 |
JPH0628255B2 (ja) | 1994-04-13 |
US4705593A (en) | 1987-11-10 |
CA1275613C (en) | 1990-10-30 |
EP0209288B1 (de) | 1991-08-07 |
GB8516984D0 (en) | 1985-08-07 |
JPS6218035A (ja) | 1987-01-27 |
EP0209288A1 (de) | 1987-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |