KR910006044A - 불필요한 물질의 플라즈마 제거 - Google Patents

불필요한 물질의 플라즈마 제거 Download PDF

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Publication number
KR910006044A
KR910006044A KR1019900011230A KR900011230A KR910006044A KR 910006044 A KR910006044 A KR 910006044A KR 1019900011230 A KR1019900011230 A KR 1019900011230A KR 900011230 A KR900011230 A KR 900011230A KR 910006044 A KR910006044 A KR 910006044A
Authority
KR
South Korea
Prior art keywords
unnecessary materials
plasma removal
plasma
exposing
placing
Prior art date
Application number
KR1019900011230A
Other languages
English (en)
Inventor
하워드 내프 제임스
프란시스 카니 죠지
죠셉 카니 프란시스
Original Assignee
빈센트 죠셉 로너
모토로라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빈센트 죠셉 로너, 모토로라 인코포레이티드 filed Critical 빈센트 죠셉 로너
Publication of KR910006044A publication Critical patent/KR910006044A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

내용 없음

Description

불필요한 물질의 프라즈마 제거
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. 상부에 제거될 물질을 포함하는 포면을 제공하는 단계와, 제거될 물질을 포함하는 표면을 플라즈마 반응로에 위치시키는 단계와, 반응성 할로겐 물질을 포함하는 가스 프라즈마에 표면을 노출시키는 단계를 포함하는 것을 특징으로 하는 표면으로 부터의 물질 제거방법.
  2. 상부에 제거될 물질을 갖는 금속, 플라스틱, 유리 또는 세라믹으로 구성된 표면을 제공하는 단계와, 제거될 물질을 청결시키는 단계와, 제거될 물질을 포함하는 표면을 플라즈마 반응로에 위치시키는 단계와, 표면을 하나 이상의 반응성 불소 및 염소 물질을 포함하는 가스 플라즈마에 노출시키는 단계를 포함하는 것을 특징으로 하는 표면으로부터의 물질 제거방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900011230A 1989-09-08 1990-07-24 불필요한 물질의 플라즈마 제거 KR910006044A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/404,938 US4975146A (en) 1989-09-08 1989-09-08 Plasma removal of unwanted material
US404,938 1989-09-08

Publications (1)

Publication Number Publication Date
KR910006044A true KR910006044A (ko) 1991-04-27

Family

ID=23601646

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011230A KR910006044A (ko) 1989-09-08 1990-07-24 불필요한 물질의 플라즈마 제거

Country Status (6)

Country Link
US (1) US4975146A (ko)
EP (1) EP0422381A3 (ko)
JP (1) JP3480496B2 (ko)
KR (1) KR910006044A (ko)
CA (1) CA2021315C (ko)
MY (1) MY107137A (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04297560A (ja) * 1991-03-26 1992-10-21 Nisshin Steel Co Ltd 鋼帯の連続溶融めっき方法及び装置
JP3502096B2 (ja) * 1992-06-22 2004-03-02 ラム リサーチ コーポレイション プラズマ処理装置内の残留物を除去するためのプラズマクリーニング方法
DE4318178C2 (de) * 1993-06-01 1995-07-13 Schott Glaswerke Verfahren zum chemischen Entfernen von, mit der Oberfläche eines Substrates aus Glas, Glaskeramik oder Keramik verbundenen Beschichtungen, so hergestelltes Substrat und Verfahren zur Herstellung eines neuen Dekors auf diesem Substrat
US5882423A (en) * 1994-02-03 1999-03-16 Harris Corporation Plasma cleaning method for improved ink brand permanency on IC packages
US5753567A (en) * 1995-08-28 1998-05-19 Memc Electronic Materials, Inc. Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5698113A (en) * 1996-02-22 1997-12-16 The Regents Of The University Of California Recovery of Mo/Si multilayer coated optical substrates
US5770523A (en) * 1996-09-09 1998-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removal of photoresist residue after dry metal etch
JPH10144668A (ja) * 1996-11-14 1998-05-29 Tokyo Electron Ltd プラズマ処理方法
US6841008B1 (en) * 2000-07-17 2005-01-11 Cypress Semiconductor Corporation Method for cleaning plasma etch chamber structures
RU2000124129A (ru) 2000-09-20 2002-09-10 Карл Цайсс (De) Оптический элемент и способ восстановления субстрата
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30505E (en) * 1972-05-12 1981-02-03 Lfe Corporation Process and material for manufacturing semiconductor devices
US4352716A (en) * 1980-12-24 1982-10-05 International Business Machines Corporation Dry etching of copper patterns
JPH07105378B2 (ja) * 1984-08-24 1995-11-13 富士通株式会社 クロム系膜のドライエツチング方法
US4676866A (en) * 1985-05-01 1987-06-30 Texas Instruments Incorporated Process to increase tin thickness
US4657616A (en) * 1985-05-17 1987-04-14 Benzing Technologies, Inc. In-situ CVD chamber cleaner
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US4764248A (en) * 1987-04-13 1988-08-16 Cypress Semiconductor Corporation Rapid thermal nitridized oxide locos process
US4857140A (en) * 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4878994A (en) * 1987-07-16 1989-11-07 Texas Instruments Incorporated Method for etching titanium nitride local interconnects
US4832787A (en) * 1988-02-19 1989-05-23 International Business Machines Corporation Gas mixture and method for anisotropic selective etch of nitride
JPH0622218B2 (ja) * 1988-08-06 1994-03-23 富士通株式会社 エッチング方法
US4877482A (en) * 1989-03-23 1989-10-31 Motorola Inc. Nitride removal method
US4919748A (en) * 1989-06-30 1990-04-24 At&T Bell Laboratories Method for tapered etching

Also Published As

Publication number Publication date
US4975146A (en) 1990-12-04
EP0422381A3 (en) 1991-05-29
CA2021315C (en) 1995-06-06
CA2021315A1 (en) 1991-03-09
EP0422381A2 (en) 1991-04-17
JP3480496B2 (ja) 2003-12-22
JPH03120383A (ja) 1991-05-22
MY107137A (en) 1995-09-30

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Effective date: 19990225