DE3789881D1 - Verfahren zur Herstellung von Photomasken und Photomaske. - Google Patents

Verfahren zur Herstellung von Photomasken und Photomaske.

Info

Publication number
DE3789881D1
DE3789881D1 DE3789881T DE3789881T DE3789881D1 DE 3789881 D1 DE3789881 D1 DE 3789881D1 DE 3789881 T DE3789881 T DE 3789881T DE 3789881 T DE3789881 T DE 3789881T DE 3789881 D1 DE3789881 D1 DE 3789881D1
Authority
DE
Germany
Prior art keywords
photomasks
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789881T
Other languages
English (en)
Other versions
DE3789881T2 (de
Inventor
Junji Hirokane
Hiroyuki Katayama
Akira Takahashi
Tetsuya Inui
Kenji Ohta
Junichi Washo
Tomoyuki Miyake
Kazuo Van
Michinobu Mieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61045754A external-priority patent/JPS62201444A/ja
Priority claimed from JP61076338A external-priority patent/JPS62231960A/ja
Priority claimed from JP61076337A external-priority patent/JPS62231959A/ja
Priority claimed from JP61117932A external-priority patent/JPS62273543A/ja
Priority claimed from JP61178195A external-priority patent/JPS6333746A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE3789881D1 publication Critical patent/DE3789881D1/de
Publication of DE3789881T2 publication Critical patent/DE3789881T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/261—Preparing a master, e.g. exposing photoresist, electroforming
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam
DE3789881T 1986-02-28 1987-02-24 Verfahren zur Herstellung von Photomasken und Photomaske. Expired - Fee Related DE3789881T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP61045754A JPS62201444A (ja) 1986-02-28 1986-02-28 フオトマスクおよびその製造方法
JP61076338A JPS62231960A (ja) 1986-04-01 1986-04-01 フオトマスクの製造方法
JP61076337A JPS62231959A (ja) 1986-04-01 1986-04-01 フオトマスクの製造方法
JP61117932A JPS62273543A (ja) 1986-05-21 1986-05-21 フオトマスクの製造方法
JP61178195A JPS6333746A (ja) 1986-07-29 1986-07-29 フオトマスクの製造方法

Publications (2)

Publication Number Publication Date
DE3789881D1 true DE3789881D1 (de) 1994-06-30
DE3789881T2 DE3789881T2 (de) 1994-09-08

Family

ID=27522488

Family Applications (2)

Application Number Title Priority Date Filing Date
DE3789881T Expired - Fee Related DE3789881T2 (de) 1986-02-28 1987-02-24 Verfahren zur Herstellung von Photomasken und Photomaske.
DE3752197T Expired - Fee Related DE3752197T2 (de) 1986-02-28 1987-02-24 Photomaske und Herstellungsverfahren dafür

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3752197T Expired - Fee Related DE3752197T2 (de) 1986-02-28 1987-02-24 Photomaske und Herstellungsverfahren dafür

Country Status (4)

Country Link
US (2) US5087535A (de)
EP (2) EP0533217B1 (de)
CA (1) CA1313792C (de)
DE (2) DE3789881T2 (de)

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US5234780A (en) * 1989-02-13 1993-08-10 Kabushiki Kaisha Toshiba Exposure mask, method of manufacturing the same, and exposure method using the same
EP0653679B1 (de) * 1989-04-28 2002-08-21 Fujitsu Limited Maske, Verfahren zur Herstellung der Maske und Verfahren zur Musterherstellung mit einer Maske
US5362591A (en) * 1989-10-09 1994-11-08 Hitachi Ltd. Et Al. Mask having a phase shifter and method of manufacturing same
EP0730200A3 (de) * 1990-01-12 1997-01-22 Sony Corp Phasenverschiebungsmaske und Verfahren zur Herstellung
US5260152A (en) * 1990-01-12 1993-11-09 Sony Corporation Phase shifting mask and method of manufacturing same
DE59010548D1 (de) * 1990-04-09 1996-11-28 Siemens Ag Phasenmaske für die Projektionsphotolithographie und Verfahren zu deren Herstellung
KR920009369B1 (ko) * 1990-05-25 1992-10-15 삼성전자 주식회사 마스크의 제작방법
JPH0450943A (ja) * 1990-06-15 1992-02-19 Mitsubishi Electric Corp マスクパターンとその製造方法
EP0466189B1 (de) * 1990-07-12 2000-10-11 Canon Kabushiki Kaisha Röntgenstrahlmaskenstruktur, Verfahren zur Herstellung und zur Röntgenstrahlbelichtung
JP2585861B2 (ja) * 1990-11-30 1997-02-26 シャープ株式会社 光メモリ素子用フォトマスクの製造方法
JP3006199B2 (ja) * 1991-09-03 2000-02-07 株式会社日立製作所 光ディスクの製造方法
EP0674223B1 (de) * 1994-02-14 1997-05-02 International Business Machines Corporation Dämpfende Phasenverschiebungsmaske und Herstellungsverfahren
JP2878143B2 (ja) * 1994-02-22 1999-04-05 インターナショナル・ビジネス・マシーンズ・コーポレイション 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法
US5679483A (en) * 1994-12-20 1997-10-21 Siemens Aktiengesellschaft Embedded phase shifting photomasks and method for manufacturing same
US5757879A (en) * 1995-06-07 1998-05-26 International Business Machines Corporation Tungsten absorber for x-ray mask
US5695896A (en) * 1995-12-04 1997-12-09 Micron Technology, Inc. Process for fabricating a phase shifting mask
KR100223329B1 (ko) * 1995-12-29 1999-10-15 김영환 반도체 소자의 미세 패턴 제조방법
US5876878A (en) * 1996-07-15 1999-03-02 Micron Technology, Inc. Phase shifting mask and process for forming comprising a phase shift layer for shifting two wavelengths of light
WO1999057722A1 (en) * 1998-05-06 1999-11-11 Seagate Technology, Llc. An etched glass disk process
US6524689B1 (en) * 1999-10-28 2003-02-25 Quantum Corporation Castellation technique for improved lift-off of photoresist in thin-film device processing and a thin-film device made thereby
KR100455723B1 (ko) 2001-09-13 2004-11-12 주식회사 하이닉스반도체 비트라인 형성방법
WO2005045911A1 (ja) * 2003-11-11 2005-05-19 Asahi Glass Company, Limited パターン形成方法、およびこれにより製造される電子回路、並びにこれを用いた電子機器
CN1320405C (zh) * 2003-12-29 2007-06-06 中芯国际集成电路制造(上海)有限公司 光罩处理器及使用此光罩处理器来处理光罩的方法
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
KR100752673B1 (ko) * 2006-10-17 2007-08-29 삼성전자주식회사 보조 패턴을 갖는 포토마스크 및 그 제조 방법
JP2010080224A (ja) * 2008-09-25 2010-04-08 Sony Corp 光学部品の製造方法および光学部品、並びに表示装置の製造方法および表示装置
US20100095707A1 (en) * 2008-10-21 2010-04-22 Qualcomm Mems Technologies,Inc. Fabricating optical waveguides
KR20100131117A (ko) * 2009-06-05 2010-12-15 삼성모바일디스플레이주식회사 유기전계 발광 표시장치용 포토마스크 제조방법
CN102103323B (zh) * 2009-12-21 2012-10-10 北京京东方光电科技有限公司 半色调掩模板及其制作方法
JP2016018139A (ja) * 2014-07-10 2016-02-01 株式会社ディスコ 露光マスクの製造方法
JP2016018187A (ja) * 2014-07-11 2016-02-01 株式会社ディスコ 露光マスクの製造方法
US10854455B2 (en) * 2016-11-21 2020-12-01 Marvell Asia Pte, Ltd. Methods and apparatus for fabricating IC chips with tilted patterning
US20200135898A1 (en) * 2018-10-30 2020-04-30 International Business Machines Corporation Hard mask replenishment for etching processes
CN117174583B (zh) * 2023-11-02 2024-01-30 合肥晶合集成电路股份有限公司 半导体结构及其制备方法

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* Cited by examiner, † Cited by third party
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DE208988C (de) *
DE1060717B (de) * 1956-04-13 1959-07-02 Franz Wagner Verfahren zur Herstellung von Rastern, Zeichnungen u. a. auf Filmen, Glaesern und anderen Traegern
US4049347A (en) * 1976-03-24 1977-09-20 General Electric Company Scratch-resistant mask for photolithographic processing
JPS5354172U (de) * 1976-10-07 1978-05-10
US4980262A (en) * 1976-08-16 1990-12-25 Eastman Kodak Company Producing a replicate video disc by a method of photographic contact printing
JPS5323631A (en) * 1976-08-18 1978-03-04 Fuji Photo Film Co Ltd Supplement method of photo developer
JPS53143204A (en) * 1977-05-17 1978-12-13 Mitsubishi Electric Corp Production of information recording carrier
JPS565545A (en) * 1979-06-27 1981-01-21 Mitsubishi Electric Corp Transfer mask for x-ray exposure and its production
JPS56112727A (en) * 1980-02-12 1981-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of x-ray mask
US4423137A (en) * 1980-10-28 1983-12-27 Quixote Corporation Contact printing and etching method of making high density recording medium
JPS6057217B2 (ja) * 1980-11-18 1985-12-13 セイコーエプソン株式会社 Ｘ線露光用マスク
JPS57112727A (en) * 1980-12-29 1982-07-13 Canon Inc Speed governor for camera
JPS57207256A (en) * 1981-06-16 1982-12-18 Fujitsu Ltd Photomask
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
DD203988A1 (de) * 1981-08-17 1983-11-09 Elektro Physikalische Werke Verfahren zur herstellung von fotomasken zur erzeugung feiner strukturen
JPS5898923A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp Ｘ線露光ホトマスク
JPS58202526A (ja) * 1982-05-21 1983-11-25 Hitachi Ltd Ｘ線露光用マスクの製造方法
JPS599659A (ja) * 1982-07-09 1984-01-19 Nec Corp フオトマスクの製造方法
JPS5968744A (ja) * 1982-10-13 1984-04-18 Nec Corp フオトマスクの製造方法
AT382040B (de) * 1983-03-01 1986-12-29 Guenther Stangl Verfahren zur herstellung von optisch strukturierten filtern fuer elektromagnetische strahlung und optisch strukturierter filter
JPS59172648A (ja) * 1983-03-22 1984-09-29 Mitsubishi Electric Corp Ｘ線露光用マスク
JPS6041228A (ja) * 1983-08-17 1985-03-04 Fujitsu Ltd パタ−ン形成方法
JPH0648546B2 (ja) * 1984-07-14 1994-06-22 日本ビクター株式会社 情報記録担体の製造法
JPS6156349A (ja) * 1984-08-28 1986-03-22 Nec Corp フオト・マスクの製造方法
EP0434114B1 (de) * 1985-08-30 1994-01-26 Sharp Kabushiki Kaisha Element für optische Speicherung und Verfahren zu dessen Herstellung
LU86722A1 (fr) * 1986-12-23 1988-07-14 Glaverbel Feuille en matiere vitreuse portant un dessin grave et procede pour graver un dessin sur un substrat en matiere vitreuse
US5079113A (en) * 1988-09-29 1992-01-07 Sharp Kabushiki Kaisha Photo-mask

Also Published As

Publication number Publication date
US5457006A (en) 1995-10-10
EP0234547A2 (de) 1987-09-02
EP0234547A3 (en) 1988-09-21
DE3789881T2 (de) 1994-09-08
DE3752197D1 (de) 1998-07-23
EP0234547B1 (de) 1994-05-25
DE3752197T2 (de) 1999-02-18
EP0533217A3 (en) 1993-04-14
US5087535A (en) 1992-02-11
CA1313792C (en) 1993-02-23
EP0533217B1 (de) 1998-06-17
EP0533217A2 (de) 1993-03-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee