JPS565545A - Transfer mask for x-ray exposure and its production - Google Patents

Transfer mask for x-ray exposure and its production

Info

Publication number
JPS565545A
JPS565545A JP8230679A JP8230679A JPS565545A JP S565545 A JPS565545 A JP S565545A JP 8230679 A JP8230679 A JP 8230679A JP 8230679 A JP8230679 A JP 8230679A JP S565545 A JPS565545 A JP S565545A
Authority
JP
Japan
Prior art keywords
soft
pattern
transmission layer
ray
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8230679A
Other languages
Japanese (ja)
Other versions
JPS641927B2 (en
Inventor
Kazuhiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8230679A priority Critical patent/JPS565545A/en
Publication of JPS565545A publication Critical patent/JPS565545A/en
Publication of JPS641927B2 publication Critical patent/JPS641927B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enable the formation of a soft X-ray absorbing layer with high accuracy and eliminate its damaging owing to physical contact by providing the soft X-ray absorbing layer within a soft X-ray transmission layer. CONSTITUTION:An epitaxial layer is grown on a silicon substrate 4 of plane bearings (1, 0, 0) to form a soft X-ray transmission layer 2. A thermal oxide film is deposited on the back side of the substrate 4 and an etching mask pattern 5 for forming supports 3 is formed. Next, resist is coated on the transmission layer and after a resist pattern 6 is formed, ions of boron or the like are implanted to harden the resist and plasma-etch part of the transmission layer 2. Next, the portions on the resist pattern 6' are annealed, after which a soft X-ray absorbing metal 7 is deposited. Next, the pattern 6' is removed, by which the soft X-ray absorbing layer 1 is formed as a pattern in the etched portions of the soft X-ray transmission layer 2. Further, the substrate 4 is etched by using the etching mask pattern 5 on the substrate 4, whereby the supports 3 are formed.
JP8230679A 1979-06-27 1979-06-27 Transfer mask for x-ray exposure and its production Granted JPS565545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8230679A JPS565545A (en) 1979-06-27 1979-06-27 Transfer mask for x-ray exposure and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8230679A JPS565545A (en) 1979-06-27 1979-06-27 Transfer mask for x-ray exposure and its production

Publications (2)

Publication Number Publication Date
JPS565545A true JPS565545A (en) 1981-01-21
JPS641927B2 JPS641927B2 (en) 1989-01-13

Family

ID=13770862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8230679A Granted JPS565545A (en) 1979-06-27 1979-06-27 Transfer mask for x-ray exposure and its production

Country Status (1)

Country Link
JP (1) JPS565545A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087535A (en) * 1986-02-28 1992-02-11 Sharp Kabushiki Kaisha Method of manufacturing photo-mask and photo-mask manufactured thereby

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5087535A (en) * 1986-02-28 1992-02-11 Sharp Kabushiki Kaisha Method of manufacturing photo-mask and photo-mask manufactured thereby
US5457006A (en) * 1986-02-28 1995-10-10 Sharp Kabushiki Kaisha Method of manufacturing photo-mask and photo-mask manufactured thereby

Also Published As

Publication number Publication date
JPS641927B2 (en) 1989-01-13

Similar Documents

Publication Publication Date Title
JPS57204133A (en) Manufacture of semiconductor integrated circuit
JPS5351970A (en) Manufacture for semiconductor substrate
JPS565545A (en) Transfer mask for x-ray exposure and its production
JPS52119172A (en) Forming method of fine pattern
JPS52117558A (en) Soft x-ray exposure mask and its manufacturing method
JPS5360177A (en) Photo mask
JPS5792830A (en) Manufacture of mask for x-ray exposure
JPS5616136A (en) Production of transfer mask for x-ray
JPS52100872A (en) Fabrication of mask for x-ray exposure
JPS5616137A (en) Transfer mask for x-ray exposure
JPS543470A (en) Etching method
JPS5421272A (en) Metal photo mask
JPS5694741A (en) Positioning mark for electronic beam exposure
JPS6446926A (en) Manufacture of mask for x-ray exposure
JPS53108773A (en) Production of semiconductor device
JPS5459873A (en) Production of semiconductor device
JPS5548950A (en) Manufacturing of semiconductor device
JPS53116787A (en) Production of semiconductor device
JPS5313879A (en) Silicon mask for x-ray exposure and its production
JPS53112673A (en) Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution
JPS5633826A (en) Manufacture of target
JPS5385166A (en) Production of semiconductor device
JPS5299780A (en) Production of silicon mask for x-ray lithography
JPS5570046A (en) Forming method of oxide film
JPS53116774A (en) Production of semiconductor device