JPS5616136A - Production of transfer mask for x-ray - Google Patents
Production of transfer mask for x-rayInfo
- Publication number
- JPS5616136A JPS5616136A JP9122379A JP9122379A JPS5616136A JP S5616136 A JPS5616136 A JP S5616136A JP 9122379 A JP9122379 A JP 9122379A JP 9122379 A JP9122379 A JP 9122379A JP S5616136 A JPS5616136 A JP S5616136A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- soft
- pattern
- ray
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000002500 ions Chemical class 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Abstract
PURPOSE:To increase mechanical strength of a soft X-ray absorbing layer and a soft X-ray transmitting layer to prevent damage dependent upon physical contact surely, by injecting ions after the soft X-ray absorbing layer pattern is formed on the soft X- ray transmitting layer or is patterned. CONSTITUTION:Epitaxial layer 2 of the B density of>=7X10 <19> atom/cm<3> is grown on the upper face of silicon substrate 4. Next, the reverse face of substrate 4 is subjected to thermal oxidation to form pattern 5 of an SiO2 film. Next, after resist pattern 6 is formed on the upper face of layer 2, layer 7 of gold, platinum, Cr, and so on is formed. Next, ions of B<+> and so on are injected to layer 7 to harden layer 7. Next, the needless resist pattern on layer 2 is exfoliated, and layer 7 is hardened at approximately 250 deg.C by annealing to form the pattern of soft X ray absorbing layer 8 consisting of metal layer 7 of a large adhesion strength. Finally, pattern 5 is used as a mask to etch substrate 4, thereby forming soft X-ray transmitting layer 2 and support material 3. Otherwise, ions may be injected after forming pattern 8. Thus, strength of layers 2 and 8 is enhanced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9122379A JPS5616136A (en) | 1979-07-17 | 1979-07-17 | Production of transfer mask for x-ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9122379A JPS5616136A (en) | 1979-07-17 | 1979-07-17 | Production of transfer mask for x-ray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5616136A true JPS5616136A (en) | 1981-02-16 |
Family
ID=14020415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9122379A Pending JPS5616136A (en) | 1979-07-17 | 1979-07-17 | Production of transfer mask for x-ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5616136A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3427449A1 (en) * | 1983-07-27 | 1985-02-07 | Mitsubishi Denki K.K., Tokio/Tokyo | Mask for X-ray lithography |
| US4670365A (en) * | 1984-10-29 | 1987-06-02 | Nec Corporation | Photomask and method of fabrication thereof |
| US4855197A (en) * | 1986-05-06 | 1989-08-08 | International Business Machines Corporation | Mask for ion, electron or X-ray lithography and method of making it |
-
1979
- 1979-07-17 JP JP9122379A patent/JPS5616136A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3427449A1 (en) * | 1983-07-27 | 1985-02-07 | Mitsubishi Denki K.K., Tokio/Tokyo | Mask for X-ray lithography |
| US4670365A (en) * | 1984-10-29 | 1987-06-02 | Nec Corporation | Photomask and method of fabrication thereof |
| US4855197A (en) * | 1986-05-06 | 1989-08-08 | International Business Machines Corporation | Mask for ion, electron or X-ray lithography and method of making it |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57204133A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5616136A (en) | Production of transfer mask for x-ray | |
| JPS52117558A (en) | Soft x-ray exposure mask and its manufacturing method | |
| JPS5331964A (en) | Production of semiconductor substrates | |
| JPS5772333A (en) | Manufacture of semiconductor device | |
| JPS5591130A (en) | Production of semiconductor device | |
| JPS56135975A (en) | Manufacture of semiconductor device | |
| JPS565545A (en) | Transfer mask for x-ray exposure and its production | |
| JPS5661140A (en) | Manufacture of semiconductor device | |
| JPS5616137A (en) | Transfer mask for x-ray exposure | |
| JPS5633840A (en) | Manufacture of semiconductor device | |
| JPS52130575A (en) | Semiconductor device and its preparation | |
| JPS53116787A (en) | Production of semiconductor device | |
| JPS55124233A (en) | Manufacturing method of semiconductor device | |
| JPS5383574A (en) | Manufacture of semiconductor device | |
| JPS5678122A (en) | Formation of pattern | |
| JPS57106170A (en) | Manufacture of semiconductor device | |
| JPS5779641A (en) | Manufacture of semiconductor device | |
| JPS5633826A (en) | Manufacture of target | |
| JPS56111265A (en) | Manufacture of semiconductor device | |
| JPS5283164A (en) | Production of thin film semiconductor substrate | |
| JPS5679446A (en) | Production of semiconductor device | |
| JPS571243A (en) | Manufacture of semiconductor device | |
| JPS5626443A (en) | Manufacture of semiconductor device | |
| JPS55161241A (en) | Transfer mask for x-ray exposure |