JPS5792830A - Manufacture of mask for x-ray exposure - Google Patents
Manufacture of mask for x-ray exposureInfo
- Publication number
- JPS5792830A JPS5792830A JP16805280A JP16805280A JPS5792830A JP S5792830 A JPS5792830 A JP S5792830A JP 16805280 A JP16805280 A JP 16805280A JP 16805280 A JP16805280 A JP 16805280A JP S5792830 A JPS5792830 A JP S5792830A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- mask
- main surface
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a thin-film support type mask with uniform thickness by using partial crystal growth technique through the irradiation of a laser. CONSTITUTION:An SiO2 film 2 is formed at a central section of one main surface of a single crystal Si substrate 1. The size of the film 2 is equalized approximately to that of a desired mask. The whole surface on the main surface of the substrate 1 is coated with amorphous or polycrystal Si 3. When the laser is irradiated to the film 3 and a surface layer is crystallized, an Si layer having sufficient mechanical coupling strength with the substrate is obtained. Metallic layers 4 used as masks having desired patterns are shaped onto the single crystal Si film 3. The substrate 1 of a section, which is worked as a mask, is removed through etching from another main surface of the substrate 1. Accordingly, the film 2 determines an end point of etching, and the mask with uniform thickness can be acquired. An Si3N4 film may be employed in place of the SiO2 film 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16805280A JPS5792830A (en) | 1980-12-01 | 1980-12-01 | Manufacture of mask for x-ray exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16805280A JPS5792830A (en) | 1980-12-01 | 1980-12-01 | Manufacture of mask for x-ray exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5792830A true JPS5792830A (en) | 1982-06-09 |
Family
ID=15860930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16805280A Pending JPS5792830A (en) | 1980-12-01 | 1980-12-01 | Manufacture of mask for x-ray exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792830A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0310124A2 (en) * | 1987-09-30 | 1989-04-05 | Canon Kabushiki Kaisha | Process for producing an X-ray mask |
| JPH01162332A (en) * | 1987-12-18 | 1989-06-26 | Sharp Corp | Mask membrane for x-ray lithography |
| US4958074A (en) * | 1987-07-13 | 1990-09-18 | Oesterreichische Investitionskredit Aktiengesellschaft | Apparatus and method for inspecting a mask |
| JPH04269832A (en) * | 1991-02-26 | 1992-09-25 | Shin Etsu Chem Co Ltd | Manufacture of mask for x-ray lithography |
-
1980
- 1980-12-01 JP JP16805280A patent/JPS5792830A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4958074A (en) * | 1987-07-13 | 1990-09-18 | Oesterreichische Investitionskredit Aktiengesellschaft | Apparatus and method for inspecting a mask |
| EP0310124A2 (en) * | 1987-09-30 | 1989-04-05 | Canon Kabushiki Kaisha | Process for producing an X-ray mask |
| JPH01162332A (en) * | 1987-12-18 | 1989-06-26 | Sharp Corp | Mask membrane for x-ray lithography |
| JPH0583171B2 (en) * | 1987-12-18 | 1993-11-25 | Sharp Kk | |
| JPH04269832A (en) * | 1991-02-26 | 1992-09-25 | Shin Etsu Chem Co Ltd | Manufacture of mask for x-ray lithography |
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