JPS5271174A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5271174A JPS5271174A JP14771475A JP14771475A JPS5271174A JP S5271174 A JPS5271174 A JP S5271174A JP 14771475 A JP14771475 A JP 14771475A JP 14771475 A JP14771475 A JP 14771475A JP S5271174 A JPS5271174 A JP S5271174A
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- production
- semiconductor device
- fitanium
- 10mmhg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To form a fitanium nitride film on substrates at a low temperature and low pressure by putting the substrates into a reaction tube which is heated at 100-400°C is kept under a reduced pressure of 0,1-10mmHg and is applied therein with a high frequency magnetic field, and introducing organic titanium compound and ammonia as a carrier gas.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14771475A JPS5271174A (en) | 1975-12-10 | 1975-12-10 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14771475A JPS5271174A (en) | 1975-12-10 | 1975-12-10 | Production of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5271174A true JPS5271174A (en) | 1977-06-14 |
JPS5742970B2 JPS5742970B2 (en) | 1982-09-11 |
Family
ID=15436532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14771475A Granted JPS5271174A (en) | 1975-12-10 | 1975-12-10 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5271174A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748249A (en) * | 1980-09-08 | 1982-03-19 | Nec Corp | Semiconductor device |
JPS5848459A (en) * | 1981-09-16 | 1983-03-22 | Nec Corp | Semiconductor device |
JPS58101454A (en) * | 1981-12-12 | 1983-06-16 | Nippon Telegr & Teleph Corp <Ntt> | Electrode for semiconductor device |
JPS60225464A (en) * | 1984-04-24 | 1985-11-09 | Hitachi Ltd | Image sensor and manufacture thereof |
JPS63174319A (en) * | 1987-01-14 | 1988-07-18 | Hitachi Ltd | Manufacture of semiconductor device |
JPH02259073A (en) * | 1989-03-31 | 1990-10-19 | Sharp Corp | Formation of titanium nitride film |
JPH0547707A (en) * | 1990-10-24 | 1993-02-26 | Sumitomo Metal Ind Ltd | Thin film forming method, and semiconductor device |
-
1975
- 1975-12-10 JP JP14771475A patent/JPS5271174A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5748249A (en) * | 1980-09-08 | 1982-03-19 | Nec Corp | Semiconductor device |
JPS5848459A (en) * | 1981-09-16 | 1983-03-22 | Nec Corp | Semiconductor device |
JPS58101454A (en) * | 1981-12-12 | 1983-06-16 | Nippon Telegr & Teleph Corp <Ntt> | Electrode for semiconductor device |
JPH033395B2 (en) * | 1981-12-12 | 1991-01-18 | Nippon Telegraph & Telephone | |
JPS60225464A (en) * | 1984-04-24 | 1985-11-09 | Hitachi Ltd | Image sensor and manufacture thereof |
JPS63174319A (en) * | 1987-01-14 | 1988-07-18 | Hitachi Ltd | Manufacture of semiconductor device |
JPH02259073A (en) * | 1989-03-31 | 1990-10-19 | Sharp Corp | Formation of titanium nitride film |
JPH0547707A (en) * | 1990-10-24 | 1993-02-26 | Sumitomo Metal Ind Ltd | Thin film forming method, and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5742970B2 (en) | 1982-09-11 |
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