JPS5271174A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5271174A
JPS5271174A JP14771475A JP14771475A JPS5271174A JP S5271174 A JPS5271174 A JP S5271174A JP 14771475 A JP14771475 A JP 14771475A JP 14771475 A JP14771475 A JP 14771475A JP S5271174 A JPS5271174 A JP S5271174A
Authority
JP
Japan
Prior art keywords
substrates
production
semiconductor device
fitanium
10mmhg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14771475A
Other languages
Japanese (ja)
Other versions
JPS5742970B2 (en
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14771475A priority Critical patent/JPS5271174A/en
Publication of JPS5271174A publication Critical patent/JPS5271174A/en
Publication of JPS5742970B2 publication Critical patent/JPS5742970B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To form a fitanium nitride film on substrates at a low temperature and low pressure by putting the substrates into a reaction tube which is heated at 100-400°C is kept under a reduced pressure of 0,1-10mmHg and is applied therein with a high frequency magnetic field, and introducing organic titanium compound and ammonia as a carrier gas.
COPYRIGHT: (C)1977,JPO&Japio
JP14771475A 1975-12-10 1975-12-10 Production of semiconductor device Granted JPS5271174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14771475A JPS5271174A (en) 1975-12-10 1975-12-10 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14771475A JPS5271174A (en) 1975-12-10 1975-12-10 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5271174A true JPS5271174A (en) 1977-06-14
JPS5742970B2 JPS5742970B2 (en) 1982-09-11

Family

ID=15436532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14771475A Granted JPS5271174A (en) 1975-12-10 1975-12-10 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5271174A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748249A (en) * 1980-09-08 1982-03-19 Nec Corp Semiconductor device
JPS5848459A (en) * 1981-09-16 1983-03-22 Nec Corp Semiconductor device
JPS58101454A (en) * 1981-12-12 1983-06-16 Nippon Telegr & Teleph Corp <Ntt> Electrode for semiconductor device
JPS60225464A (en) * 1984-04-24 1985-11-09 Hitachi Ltd Image sensor and manufacture thereof
JPS63174319A (en) * 1987-01-14 1988-07-18 Hitachi Ltd Manufacture of semiconductor device
JPH02259073A (en) * 1989-03-31 1990-10-19 Sharp Corp Formation of titanium nitride film
JPH0547707A (en) * 1990-10-24 1993-02-26 Sumitomo Metal Ind Ltd Thin film forming method, and semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748249A (en) * 1980-09-08 1982-03-19 Nec Corp Semiconductor device
JPS5848459A (en) * 1981-09-16 1983-03-22 Nec Corp Semiconductor device
JPS58101454A (en) * 1981-12-12 1983-06-16 Nippon Telegr & Teleph Corp <Ntt> Electrode for semiconductor device
JPH033395B2 (en) * 1981-12-12 1991-01-18 Nippon Telegraph & Telephone
JPS60225464A (en) * 1984-04-24 1985-11-09 Hitachi Ltd Image sensor and manufacture thereof
JPS63174319A (en) * 1987-01-14 1988-07-18 Hitachi Ltd Manufacture of semiconductor device
JPH02259073A (en) * 1989-03-31 1990-10-19 Sharp Corp Formation of titanium nitride film
JPH0547707A (en) * 1990-10-24 1993-02-26 Sumitomo Metal Ind Ltd Thin film forming method, and semiconductor device

Also Published As

Publication number Publication date
JPS5742970B2 (en) 1982-09-11

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