DD264029A5 - Verwendung von metallorganischen verbindungen zur gasphasenabscheidung - Google Patents
Verwendung von metallorganischen verbindungen zur gasphasenabscheidung Download PDFInfo
- Publication number
- DD264029A5 DD264029A5 DD87306951A DD30695187A DD264029A5 DD 264029 A5 DD264029 A5 DD 264029A5 DD 87306951 A DD87306951 A DD 87306951A DD 30695187 A DD30695187 A DD 30695187A DD 264029 A5 DD264029 A5 DD 264029A5
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- compounds
- metal
- atoms
- formula
- group
- Prior art date
Links
- 150000002902 organometallic compounds Chemical class 0.000 title claims abstract description 19
- 230000008021 deposition Effects 0.000 title description 6
- 238000007740 vapor deposition Methods 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 20
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 125000000217 alkyl group Chemical group 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 125000000392 cycloalkenyl group Chemical group 0.000 claims description 5
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 125000004070 6 membered heterocyclic group Chemical group 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- KPPVNWGJXFMGAM-UUILKARUSA-N (e)-2-methyl-1-(6-methyl-3,4-dihydro-2h-quinolin-1-yl)but-2-en-1-one Chemical compound CC1=CC=C2N(C(=O)C(/C)=C/C)CCCC2=C1 KPPVNWGJXFMGAM-UUILKARUSA-N 0.000 claims description 3
- 125000002373 5 membered heterocyclic group Chemical group 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- -1 alkyl radical Chemical class 0.000 description 20
- 238000000354 decomposition reaction Methods 0.000 description 9
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 9
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 125000002524 organometallic group Chemical group 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QAIDPMSYQQBQTK-UHFFFAOYSA-N diethylgallium Chemical compound CC[Ga]CC QAIDPMSYQQBQTK-UHFFFAOYSA-N 0.000 description 3
- IGOGAEYHSPSTHS-UHFFFAOYSA-N dimethylgallium Chemical compound C[Ga]C IGOGAEYHSPSTHS-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 239000002879 Lewis base Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- OWQWEJKPOUNPPG-UHFFFAOYSA-M chloro(dimethyl)gallane Chemical compound C[Ga](C)Cl OWQWEJKPOUNPPG-UHFFFAOYSA-M 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012442 inert solvent Substances 0.000 description 2
- 150000007527 lewis bases Chemical class 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 238000010626 work up procedure Methods 0.000 description 2
- WPWHSFAFEBZWBB-UHFFFAOYSA-N 1-butyl radical Chemical compound [CH2]CCC WPWHSFAFEBZWBB-UHFFFAOYSA-N 0.000 description 1
- FJOBHOXWINCDFI-UHFFFAOYSA-N 2-(dimethylalumanylmethyl)-N,N-dipropylcyclohexan-1-amine 1-(2-dimethylindiganylcyclohexyl)-N,N-dimethylmethanamine Chemical compound CN(C)CC1C(CCCC1)[In](C)C.C(CC)N(C1C(CCCC1)C[Al](C)C)CCC FJOBHOXWINCDFI-UHFFFAOYSA-N 0.000 description 1
- 125000005916 2-methylpentyl group Chemical group 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- 125000004105 2-pyridyl group Chemical group N1=C([*])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- KEFHIAWHBQGYQM-UHFFFAOYSA-N 3-dimethylalumanyl-n,n-dimethylpropan-1-amine Chemical compound CN(C)CCC[Al](C)C KEFHIAWHBQGYQM-UHFFFAOYSA-N 0.000 description 1
- HZVMDZFIUJZIOT-UHFFFAOYSA-N 3-dimethylindiganyl-n,n-dimethylpropan-1-amine Chemical compound CN(C)CCC[In](C)C HZVMDZFIUJZIOT-UHFFFAOYSA-N 0.000 description 1
- 125000005917 3-methylpentyl group Chemical group 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- MMCSVIBTNDEOGH-UHFFFAOYSA-N C(C)N(CCC[In](CC)CC)CC.C(C)N(CCC[In](C)C)CC Chemical compound C(C)N(CCC[In](CC)CC)CC.C(C)N(CCC[In](C)C)CC MMCSVIBTNDEOGH-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- IAOIYZGEZFTSLO-UHFFFAOYSA-N N1=C(C=CC=C1)CC[In](C)C.C(C)(C)N(CCCC[In](C)C)C(C)C Chemical compound N1=C(C=CC=C1)CC[In](C)C.C(C)(C)N(CCCC[In](C)C)C(C)C IAOIYZGEZFTSLO-UHFFFAOYSA-N 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 101710198350 Snaclec 1 Proteins 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001348 alkyl chlorides Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SIPUZPBQZHNSDW-UHFFFAOYSA-N bis(2-methylpropyl)aluminum Chemical compound CC(C)C[Al]CC(C)C SIPUZPBQZHNSDW-UHFFFAOYSA-N 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 125000000596 cyclohexenyl group Chemical group C1(=CCCCC1)* 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- HJXBDPDUCXORKZ-UHFFFAOYSA-N diethylalumane Chemical compound CC[AlH]CC HJXBDPDUCXORKZ-UHFFFAOYSA-N 0.000 description 1
- 125000006001 difluoroethyl group Chemical group 0.000 description 1
- VMZNTODJXPNZEI-UHFFFAOYSA-N dimethyl(phenyl)indigane Chemical compound C[In](C)C1=CC=CC=C1 VMZNTODJXPNZEI-UHFFFAOYSA-N 0.000 description 1
- JGHYBJVUQGTEEB-UHFFFAOYSA-M dimethylalumanylium;chloride Chemical compound C[Al](C)Cl JGHYBJVUQGTEEB-UHFFFAOYSA-M 0.000 description 1
- SZEJQLSRYARYHS-UHFFFAOYSA-N dimethylindium Chemical compound C[In]C SZEJQLSRYARYHS-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- RRFBKRFYFCJYFK-UHFFFAOYSA-N lithium;n,n-dimethylpropan-1-amine Chemical compound [Li+].CN(C)CC[CH2-] RRFBKRFYFCJYFK-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000004205 trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19863631469 DE3631469A1 (de) | 1986-09-16 | 1986-09-16 | Metallorganische verbindungen |
Publications (1)
Publication Number | Publication Date |
---|---|
DD264029A5 true DD264029A5 (de) | 1989-01-18 |
Family
ID=6309677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DD87306951A DD264029A5 (de) | 1986-09-16 | 1987-09-14 | Verwendung von metallorganischen verbindungen zur gasphasenabscheidung |
Country Status (6)
Country | Link |
---|---|
US (2) | US4880492A (ko) |
EP (1) | EP0260534B1 (ko) |
JP (1) | JP2579169B2 (ko) |
KR (1) | KR950001217B1 (ko) |
DD (1) | DD264029A5 (ko) |
DE (2) | DE3631469A1 (ko) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3631469A1 (de) * | 1986-09-16 | 1988-03-17 | Merck Patent Gmbh | Metallorganische verbindungen |
DE3726485A1 (de) * | 1987-08-08 | 1989-02-16 | Merck Patent Gmbh | Metallorganische verbindungen |
US5156884A (en) * | 1987-10-23 | 1992-10-20 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a film of oxidized metal |
DE3817090A1 (de) * | 1988-05-19 | 1989-11-30 | Merck Patent Gmbh | Cyclische metallorganische verbindungen |
DE3841643C2 (de) * | 1988-12-10 | 1999-07-01 | Merck Patent Gmbh | Metallorganische Verbindungen und deren Verwendung |
DE3913165C2 (de) * | 1989-04-21 | 2000-05-18 | Merck Patent Gmbh | Metallorganische Verbindungen sowie deren Verwendung zur Herstellung dünner Schichten |
US5089643A (en) * | 1990-06-08 | 1992-02-18 | The United States Of America As Represented By The Secretary Of The Navy | Method of preparing monomeric organometallic compounds |
US5075466A (en) * | 1990-06-08 | 1991-12-24 | The United States Of America As Represented By The Secretary Of The Navy | Method of monomeric organometallic compounds |
US5171610A (en) * | 1990-08-28 | 1992-12-15 | The Regents Of The University Of Calif. | Low temperature photochemical vapor deposition of alloy and mixed metal oxide films |
WO1993007312A1 (de) * | 1991-10-09 | 1993-04-15 | Aixtron Gmbh | Verfahren zum beschichten von substraten |
GB9315771D0 (en) * | 1993-07-30 | 1993-09-15 | Epichem Ltd | Method of depositing thin metal films |
US5924012A (en) | 1996-10-02 | 1999-07-13 | Micron Technology, Inc. | Methods, complexes, and system for forming metal-containing films |
US6130160A (en) * | 1996-10-02 | 2000-10-10 | Micron Technology, Inc. | Methods, complexes and system for forming metal-containing films |
KR100266965B1 (ko) * | 1997-12-02 | 2000-09-15 | 김충섭 | 리튬과 13 족 금속의 알킬산알킬헤테로금속 화합물을 사용한 리튬과 13 족 금속의 복합 산화물의 제조방법 |
US6214729B1 (en) | 1998-09-01 | 2001-04-10 | Micron Technology, Inc. | Metal complexes with chelating C-, N-donor ligands for forming metal-containing films |
US6281124B1 (en) | 1998-09-02 | 2001-08-28 | Micron Technology, Inc. | Methods and systems for forming metal-containing films on substrates |
GB9919071D0 (en) | 1999-08-12 | 1999-10-13 | Isis Innovation | Deposition compounds |
US7309359B2 (en) * | 2003-08-21 | 2007-12-18 | Warsaw Orthopedic, Inc. | Allogenic/xenogenic implants and methods for augmenting or repairing intervertebral discs |
US7744651B2 (en) | 2002-09-18 | 2010-06-29 | Warsaw Orthopedic, Inc | Compositions and methods for treating intervertebral discs with collagen-based materials |
US20040054414A1 (en) * | 2002-09-18 | 2004-03-18 | Trieu Hai H. | Collagen-based materials and methods for augmenting intervertebral discs |
WO2004026190A2 (en) * | 2002-09-18 | 2004-04-01 | Sdgi Holdings, Inc. | Natural tissue devices and methods of implantation |
JP2006515765A (ja) | 2002-11-15 | 2006-06-08 | エスディージーアイ・ホールディングス・インコーポレーテッド | 滑膜性関節を治療するためのコラーゲンベース材料および方法 |
US8118779B2 (en) | 2006-06-30 | 2012-02-21 | Warsaw Orthopedic, Inc. | Collagen delivery device |
US8399619B2 (en) | 2006-06-30 | 2013-03-19 | Warsaw Orthopedic, Inc. | Injectable collagen material |
KR20130087354A (ko) * | 2012-01-27 | 2013-08-06 | 주식회사 유피케미칼 | 인듐을 포함한 산화막 및 이의 제조 방법 |
CN105473599B (zh) * | 2013-08-22 | 2018-08-28 | 优美科股份公司及两合公司 | 用于生产烷基铟化合物的方法及其用途 |
WO2016108398A1 (ko) * | 2014-12-31 | 2016-07-07 | 주식회사 유진테크 머티리얼즈 | 유기 13족 전구체 및 이를 이용한 박막 증착 방법 |
WO2022190877A1 (ja) * | 2021-03-08 | 2022-09-15 | 株式会社Adeka | 原子層堆積法用薄膜形成用原料、薄膜、薄膜の製造方法及び亜鉛化合物 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3154828A (en) * | 1961-07-13 | 1964-11-03 | Accurate Wire Forming Inc | Crate fastener |
FR2403646A1 (fr) * | 1977-09-16 | 1979-04-13 | Anvar | Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v |
US4171235A (en) * | 1977-12-27 | 1979-10-16 | Hughes Aircraft Company | Process for fabricating heterojunction structures utilizing a double chamber vacuum deposition system |
US4247359A (en) * | 1978-10-30 | 1981-01-27 | Honeywell Inc. | Preparation of epitaxial rare earth thin films |
DE3133871A1 (de) * | 1981-08-27 | 1983-03-10 | M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München | Verfahren zur herstellung homogener beschichtungen aus zwei oder mehreren metallen und/oder metallverbindungen |
GB2117775A (en) * | 1981-11-25 | 1983-10-19 | Secr Defence | Organometallic adducts and their use in the preparation of compound semiconductor materials |
DE3366927D1 (en) * | 1982-08-13 | 1986-11-20 | Secr Defence Brit | Preparation of organometallic indium and gallium compounds |
DE3379059D1 (en) * | 1982-10-19 | 1989-03-02 | Secr Defence Brit | Organometallic chemical vapour deposition of films |
DE3483164D1 (de) * | 1983-01-19 | 1990-10-18 | British Telecomm | Zuechtung von halbleiter. |
US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
US4734514A (en) * | 1984-10-25 | 1988-03-29 | Morton Thiokol, Inc. | Hydrocarbon-substituted analogs of phosphine and arsine, particularly for metal organic chemical vapor deposition |
US4594264A (en) * | 1984-11-20 | 1986-06-10 | Hughes Aircraft Company | Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes |
JPS6217099A (ja) * | 1985-07-16 | 1987-01-26 | Kokusai Denshin Denwa Co Ltd <Kdd> | ビスマス含有酸化物単結晶の製造方法 |
DE3631469A1 (de) * | 1986-09-16 | 1988-03-17 | Merck Patent Gmbh | Metallorganische verbindungen |
US4833103A (en) * | 1987-06-16 | 1989-05-23 | Eastman Kodak Company | Process for depositing a III-V compound layer on a substrate |
US4792467A (en) * | 1987-08-17 | 1988-12-20 | Morton Thiokol, Inc. | Method for vapor phase deposition of gallium nitride film |
US4879397A (en) * | 1987-11-03 | 1989-11-07 | Cornell Research Foundation, Inc. | Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom |
US4904616A (en) * | 1988-07-25 | 1990-02-27 | Air Products And Chemicals, Inc. | Method of depositing arsine, antimony and phosphine substitutes |
US4975299A (en) * | 1989-11-02 | 1990-12-04 | Eastman Kodak Company | Vapor deposition process for depositing an organo-metallic compound layer on a substrate |
-
1986
- 1986-09-16 DE DE19863631469 patent/DE3631469A1/de not_active Withdrawn
-
1987
- 1987-09-03 EP EP87112843A patent/EP0260534B1/de not_active Expired - Lifetime
- 1987-09-03 DE DE8787112843T patent/DE3775311D1/de not_active Expired - Fee Related
- 1987-09-12 KR KR1019870010130A patent/KR950001217B1/ko not_active IP Right Cessation
- 1987-09-14 DD DD87306951A patent/DD264029A5/de not_active IP Right Cessation
- 1987-09-15 US US07/096,583 patent/US4880492A/en not_active Expired - Lifetime
- 1987-09-16 JP JP62229965A patent/JP2579169B2/ja not_active Expired - Fee Related
-
1989
- 1989-08-03 US US07/389,197 patent/US5112432A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5112432A (en) | 1992-05-12 |
EP0260534B1 (de) | 1991-12-18 |
US4880492A (en) | 1989-11-14 |
KR880004129A (ko) | 1988-06-01 |
DE3775311D1 (de) | 1992-01-30 |
JP2579169B2 (ja) | 1997-02-05 |
JPS6383092A (ja) | 1988-04-13 |
DE3631469A1 (de) | 1988-03-17 |
KR950001217B1 (ko) | 1995-02-14 |
EP0260534A1 (de) | 1988-03-23 |
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