FR2403646A1 - Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v - Google Patents

Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v

Info

Publication number
FR2403646A1
FR2403646A1 FR7728237A FR7728237A FR2403646A1 FR 2403646 A1 FR2403646 A1 FR 2403646A1 FR 7728237 A FR7728237 A FR 7728237A FR 7728237 A FR7728237 A FR 7728237A FR 2403646 A1 FR2403646 A1 FR 2403646A1
Authority
FR
France
Prior art keywords
iii
semiconductor compound
deposit
making
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7728237A
Other languages
English (en)
Other versions
FR2403646B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7728237A priority Critical patent/FR2403646A1/fr
Priority to GB7835375A priority patent/GB2007632B/en
Priority to US05/941,728 priority patent/US4250205A/en
Priority to JP11322778A priority patent/JPS5453963A/ja
Priority to DE19782840331 priority patent/DE2840331A1/de
Publication of FR2403646A1 publication Critical patent/FR2403646A1/fr
Application granted granted Critical
Publication of FR2403646B1 publication Critical patent/FR2403646B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Abstract

L'invention concerne un procédé de réalisation par dépôt chimique en phase vapeur, d'une couche d'un composé semi-conducteur d'éléments M(III) et M'(V) des groupes III et V sur un substrat. Le procédé consiste à décomposer en présence du substrat, un composé de coordination : renfermant, d'une part, les éléments M(III) et M'(V) liés par une liaison donneur/accepteur, d'autre part, des radicaux chimiques R1 , R2 , R3 , R4 , R5 , R 6 , autres qu'un hydrogène, au moins un des radicaux R1 , R2 et/ou R3 fixé à l'élément M(III) étant un donneur d'électrons stabilisant la liaison donneur/accepteur. L'invention est tout particulièrement applicable pour réaliser des dispositifs électroniques semi-conducteurs.
FR7728237A 1977-09-16 1977-09-16 Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v Granted FR2403646A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7728237A FR2403646A1 (fr) 1977-09-16 1977-09-16 Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
GB7835375A GB2007632B (en) 1977-09-16 1978-09-05 Process for depositing a semi-conductor layer on a substrate and a semi-conductor layered substrate produced by the process
US05/941,728 US4250205A (en) 1977-09-16 1978-09-12 Process for depositing a III-V semi-conductor layer on a substrate
JP11322778A JPS5453963A (en) 1977-09-16 1978-09-14 Method of forming third and fifth group element semiconductor compound evaporating layer
DE19782840331 DE2840331A1 (de) 1977-09-16 1978-09-15 Verfahren zum aufbringen einer halbleitenden verbindung von elementen der gruppen iii und v des periodensystems

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7728237A FR2403646A1 (fr) 1977-09-16 1977-09-16 Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v

Publications (2)

Publication Number Publication Date
FR2403646A1 true FR2403646A1 (fr) 1979-04-13
FR2403646B1 FR2403646B1 (fr) 1980-08-01

Family

ID=9195544

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7728237A Granted FR2403646A1 (fr) 1977-09-16 1977-09-16 Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v

Country Status (5)

Country Link
US (1) US4250205A (fr)
JP (1) JPS5453963A (fr)
DE (1) DE2840331A1 (fr)
FR (1) FR2403646A1 (fr)
GB (1) GB2007632B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052979A1 (fr) * 1980-11-18 1982-06-02 BRITISH TELECOMMUNICATIONS public limited company Production de composés du groupe IIIB-VB
WO1986003228A1 (fr) * 1984-11-20 1986-06-05 Hughes Aircraft Company Procede de depot d'arseniure de gallium a partir de complexes de gallium-arsenic en phase vapeur

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3379059D1 (en) * 1982-10-19 1989-03-02 Secr Defence Brit Organometallic chemical vapour deposition of films
EP0117051B2 (fr) * 1983-01-19 1995-02-08 BRITISH TELECOMMUNICATIONS public limited company Croissance de semi-conducteurs
DK318184A (da) * 1984-02-17 1985-08-18 Stauffer Chemical Co Hoejvakuumaflejringsprocesser under anvendelse af et kontinuerligt pnictidleveringssystem
AU2993684A (en) * 1984-02-17 1985-08-22 Stauffer Chemical Company Vapour deposition of pnictides
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
US4524090A (en) * 1984-04-30 1985-06-18 The United States Of America As Represented By The Secretary Of The Navy Deposition of compounds from multi-component organo-metals
JPS61275191A (ja) * 1985-05-29 1986-12-05 Furukawa Electric Co Ltd:The ＧａＡｓ薄膜の気相成長法
JPS6291494A (ja) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan 化合物半導体単結晶成長方法及び装置
JPH0645886B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
US4717597A (en) * 1986-03-21 1988-01-05 Motorola Inc. Method for providing impurities into a carrier gas line
US5250135A (en) * 1986-05-21 1993-10-05 British Telecommunications Public Limited Company Reagent source
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
DE3631469A1 (de) * 1986-09-16 1988-03-17 Merck Patent Gmbh Metallorganische verbindungen
US4814203A (en) * 1986-09-29 1989-03-21 Ethyl Corporation Vapor deposition of arsenic
US4833103A (en) * 1987-06-16 1989-05-23 Eastman Kodak Company Process for depositing a III-V compound layer on a substrate
US4798701A (en) * 1987-07-13 1989-01-17 International Business Machines Corporation Method of synthesizing amorphous group IIIA-group VA compounds
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film
US4975299A (en) * 1989-11-02 1990-12-04 Eastman Kodak Company Vapor deposition process for depositing an organo-metallic compound layer on a substrate
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US6607829B1 (en) * 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6207392B1 (en) 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922475A (en) * 1970-06-22 1975-11-25 Rockwell International Corp Process for producing nitride films
SU570239A1 (ru) * 1976-02-12 1979-02-10 Институт химии АН СССР "Способ получени кристаллических соединений а1у ву14
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052979A1 (fr) * 1980-11-18 1982-06-02 BRITISH TELECOMMUNICATIONS public limited company Production de composés du groupe IIIB-VB
WO1986003228A1 (fr) * 1984-11-20 1986-06-05 Hughes Aircraft Company Procede de depot d'arseniure de gallium a partir de complexes de gallium-arsenic en phase vapeur

Also Published As

Publication number Publication date
GB2007632A (en) 1979-05-23
US4250205A (en) 1981-02-10
GB2007632B (en) 1982-05-26
JPS5453963A (en) 1979-04-27
FR2403646B1 (fr) 1980-08-01
DE2840331A1 (de) 1979-04-05

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