KR920701515A - 유기금속성 부가 화합물 - Google Patents

유기금속성 부가 화합물

Info

Publication number
KR920701515A
KR920701515A KR1019910701065A KR910701065A KR920701515A KR 920701515 A KR920701515 A KR 920701515A KR 1019910701065 A KR1019910701065 A KR 1019910701065A KR 910701065 A KR910701065 A KR 910701065A KR 920701515 A KR920701515 A KR 920701515A
Authority
KR
South Korea
Prior art keywords
organometallic
group
compound
addition compound
alkenyl
Prior art date
Application number
KR1019910701065A
Other languages
English (en)
Inventor
호스타레크 마틴
로카이 마티어스
폴 루드비히
Original Assignee
위르겐 호이만, 라인하르트 슈틀러
메르크 파텐트 게젤샤프트 이크 베쉬랭크터 하프퉁
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 위르겐 호이만, 라인하르트 슈틀러, 메르크 파텐트 게젤샤프트 이크 베쉬랭크터 하프퉁 filed Critical 위르겐 호이만, 라인하르트 슈틀러
Publication of KR920701515A publication Critical patent/KR920701515A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/062—Al linked exclusively to C
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/50—Organo-phosphines
    • C07F9/5045—Complexes or chelates of phosphines with metallic compounds or metals
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/66—Arsenic compounds
    • C07F9/70—Organo-arsenic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

내용 없음

Description

유기금속성 부가 화합물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. 하기 일반식(I)의 유기금속성 부가 화합물의, 기상 증착에 의한 얇은 필름 또는 층 형성에 있어서의 출발 화합물로서의 용도.
    Ⅰ)
    상기식에서, M은 알루미늄, 갈륨 또는 인듐이고, X는 질소, 인, 비소 또는 안티몬이며, R1, R2, R3및 R4는 서로 독립적으로 각각 H, C|1-8의 부분적으로 또는 전체적으로 불화될 수 있는 알킬기, 각각 C3-8의 사이클로알킬, 알케닐 또는 사이클로 알케닐기, 또는 아릴기이고, R5는 C1-8의 부분적으로 또는 전체적으로 불화될 수 있는 알킬기, 각각 C3-8의 사이클로알킬, 알케닐 또는 사이클로알케닐기, 또는 알릴기이다.
  2. 제1항에 있어서, 에피텍시층 형성에 있어서의 일반식(I)의 유기 금속성 부가화합물의 용도.
  3. 사용된 유기금속성 출발 화합물이 하기 일반식(I)의 부가 화합물임을 특징으로 하는, 기상 증착에 의한 기재상의 얇은 필름 또는 층 형성 방법.
    (Ⅰ)
    상기식에서, R1,R2,R3,R4,R5,M 및 X는 제1항에서 정의한 의미를 갖는다.
  4. 제3항에 있어서, 화합물 반도체 또는 전기적 및 광전기적 부품을 제조하기 위해, 증착 공정중에, 사용된 반응 조건하에서 기상인 하나 이상의 비소, 안티몬 또는 인 화합물에 도입함을 특징으로 하는 방법.
  5. 제3항에 있어서, 증착 공정중에 일반식(I)의 유기금속성 부가 화합물 이외에 도핑제를 가함을 특징으로 하는 방법.
  6. 제3항에 있어서, 기타 유기금속 화합물의 증착 공정중에 제1항에 따른 일반식(I)의 부가 화합물을 도핑제로서 가함을 특징으로 하는 방법.
  7. 하기 일반식(Ⅱ)의 유기금속성 부가 화합물.
    (Ⅱ)
    상기식에서, M'는 갈륨 또는 인듐이고, X는 질소, 인, 비소 또는 안티몬이며, R1,R2,R3및 R4는 서로 독립적으로 각각 H, C1-8의 부분적으로 또는 전체적으로 불화될 수 있는 알킬기, 각각 C3-8의 사이클로알킬, 알케닐 또는 사이클로 알케닐기, 또는 아릴기이고, R6의 C3-8의 부분적으로 또는 전체적으로 불화될 수 있는 측쇄 알킬기이다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910701065A 1989-03-09 1990-03-03 유기금속성 부가 화합물 KR920701515A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DEP39075818 1989-03-09
DE3907581A DE3907581A1 (de) 1989-03-09 1989-03-09 Metallorganische adduktverbindungen
PCT/EP1990/000357 WO1990010727A1 (de) 1989-03-09 1990-03-03 Metallorganische adduktverbindungen

Publications (1)

Publication Number Publication Date
KR920701515A true KR920701515A (ko) 1992-08-11

Family

ID=6375894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910701065A KR920701515A (ko) 1989-03-09 1990-03-03 유기금속성 부가 화합물

Country Status (6)

Country Link
US (1) US5234716A (ko)
EP (1) EP0462135B1 (ko)
JP (1) JPH04503954A (ko)
KR (1) KR920701515A (ko)
DE (2) DE3907581A1 (ko)
WO (1) WO1990010727A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8928824D0 (en) * 1989-12-21 1990-02-28 Isis Innovation Processes for the deposition of thin films on solids
DE4217735A1 (de) * 1992-05-29 1993-12-02 Merck Patent Gmbh Borhaltige organische Gruppe-V-Verbindungen
KR101965219B1 (ko) * 2015-02-17 2019-04-03 주식회사 유피케미칼 알루미늄 화합물 및 이를 이용한 알루미늄-함유 막의 형성 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0080844A1 (en) * 1981-11-25 1983-06-08 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and The preparation of adducts which may be used in the preparation of compound semiconductor materials
GB2117775A (en) * 1981-11-25 1983-10-19 Secr Defence Organometallic adducts and their use in the preparation of compound semiconductor materials
DE3575579D1 (de) * 1984-11-20 1990-03-01 Hughes Aircraft Co Verfahren zum niederschlagen von galliumarsenid mittels daempfe von gallium-arsenkomplexen.
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films

Also Published As

Publication number Publication date
DE3907581A1 (de) 1990-09-13
US5234716A (en) 1993-08-10
JPH04503954A (ja) 1992-07-16
EP0462135B1 (de) 1994-09-07
WO1990010727A1 (de) 1990-09-20
DE59007073D1 (de) 1994-10-13
EP0462135A1 (de) 1991-12-27

Similar Documents

Publication Publication Date Title
KR890701598A (ko) 유기 금속성 화합물
KR920701514A (ko) 가스상으로부터 박층 필름을 증착시키기 위한 유기금속 화합물의 용도
KR900001874A (ko) 아르신, 안티모니 및 포스핀 치환물
KR910014404A (ko) 올레핀 중합용 촉매 성분 및 이로부터 수득되는 촉매
KR860700072A (ko) 단결정 실리콘 기판과 단결정 막의 합성물 및 그 형성방법
KR960036160A (ko) 화합물 반도체 발광소자 및 그 제조 방법
KR870011175A (ko) 편광성 필름
KR920700939A (ko) 감광성 내식막-패턴된 금속층용 부식제 용액
KR970061355A (ko) 올레핀 중합용 고체촉매성분, 그 제조방법 및 폴리올레핀의 제조방법
KR870011146A (ko) 유기용매-용해성 다가금속 알콕시 알콕시드와 그 제조방법 및 이를 이용한 조성물
KR970705568A (ko) 에피택셜 반도체 층의 성장을 위한 금속유기화합물의 형성(formation of a metalorganic compound for growing epitaxial semiconductor layers)
KR910011870A (ko) 헤테로사이클릭 유기금속 화합물
KR880001684A (ko) 수소화갈륨-드리알킬아민 부가물, 및 iii-v 화합물 필름의 사용방법
KR920701515A (ko) 유기금속성 부가 화합물
KR960703947A (ko) 알크-1-엔의 동종- 및 공중합체의 제조 방법(process for preparing homo- and copolymers of alk-1-enes)
KR890017261A (ko) 환식 유기 금속 화합물
CA2111728A1 (en) Process for the Preparation of an Organopolysiloxane Resin
DE3772685D1 (de) Verwendung von gemischen aus seltenen erden, um kraftstoffe fuer dieselmotoren zu stabilisieren.
KR940701462A (ko) 기재상에 금속을 부착시키기 위한 유기금속 화합물의 사용방법
KR830007655A (ko) 벤조디아제핀 화합물의 제조 방법
KR910700254A (ko) 유기금속 화합물
KR890002316A (ko) 폴리아릴알칸 올리고머 조성물 및 그의 제조방법
KR900016230A (ko) 유기금속 화합물
KR870007142A (ko) 이환 화합물의 제조방법
KR970003428A (ko) 에피탁시 반도체 웨이퍼(epitaxially coated semiconductor wafer)의 제조방법

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid