KR860700072A - 단결정 실리콘 기판과 단결정 막의 합성물 및 그 형성방법 - Google Patents

단결정 실리콘 기판과 단결정 막의 합성물 및 그 형성방법

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KR860700072A
KR860700072A KR1019850700404A KR850700404A KR860700072A KR 860700072 A KR860700072 A KR 860700072A KR 1019850700404 A KR1019850700404 A KR 1019850700404A KR 850700404 A KR850700404 A KR 850700404A KR 860700072 A KR860700072 A KR 860700072A
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single crystal
silicon substrate
crystal film
gallium
composite
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KR940001249B1 (ko
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엠·버논 스탠리
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로버트 이·스크라이브너
어드밴스드 에너지 펀드 리미티드
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Abstract

내용 없음

Description

단결성 실리콘 기판과 단결정 막의 합성물 및 그 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명에 따라 만들어진 태양셀에 대한 측단면도이다.

Claims (34)

  1. 실제로 단결정인 실리콘 기판과, 상기 기판상에 직접 접촉되어 에피택셀 방식으로 배치돤 갈륨 아세나이드 또는 갈륨 알루미늄 아세나이드로 구성된 단결정 필름을 포함하는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물.
  2. 제1항에 있어서, 상기 단결정 막이 갈륨 아세나이드로 구성된 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물.
  3. 제1항에 있어서, 상기 단결정 막은 갈륨 알루미늄 아세나이드로 구성된 것을 특징으로 하는 단결성 실리콘 기판과 단결정막의 합성물.
  4. 제1항에 있어서, 상기 단결정 막은 불순물로 도핑된 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물.
  5. 제4항에 있어서, 상기 단결정막은 억셉터 불순물로 도핑된 것을 특징으로 하는 단결정 실리콘기판과 단결정막의 합성물.
  6. 제6항에 있어서, 상기 단결정막은 도너 불순물로 도핑된 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물.
  7. 제4항에 있어서, 상기 단결정막은 금속 유기증기증착에 의해 상기 실리콘 기판상에 직접 성장되는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물.
  8. 제2항에 있어서, 상기 갈륨 아세나이드 막은 트리메틸갈륨과 아르신의 금속유기 화학적 증기 증착에 의해 상기 단결성 실리콘 기판상에 성장되는 것을 특징으로 하는 단결성 실리콘 기판과 단결정막의 합성물.
  9. 제2항에 있어서, 상기 갈륨 아세나이드 막은 트리에틸갈륨과 아르신의 금속유기 화학적 증기 증착에 의해 상기 단결성 실리콘 기판상에 성장되는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물.
  10. 제3항에 있어서, 상기 갈륨아루미늄 아세나이드 막은 트리메틸갈륨과 트리메틸알루미늄과 아르신의 금속유기 증기증착에 의해 상기 실리콘 기판상에 직접 성장되는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물.
  11. 실리콘 기판상에 직접 접촉하여 에피택셜 방식으로 배치된 갈륨 아세나이드 또는 갈륨 알루미늄 아세나이드의 단결정막을 구비하는 실제로 단결정인 실리콘 기판을 포함하고, 상기 단결정막과 결합되어 그위에 배치된 제 1전극을 포함하는 것을 특징으로 하는 감광성 전자장치.
  12. 제11항에 있어서, 상기 실리콘 기판이 베이스에서 억셉터 불순물로 도핑되는 것을 특징으로 하는 감광성 전자장치.
  13. 제11항에 있어서, 상기 실리콘 기판이 베이스에서 도너 불순물로 도핑되는 것을 특징으로 하는 감광성 전자장치.
  14. 제11항에 있어서, 상기 단결정막이 베이스에 억셉터 불순물로 도핑되는 것을 특징으로 하는 감광성 전자장치.
  15. 제11항에 있어서, 상기 단결정막은 베이스에서 도너 불순물로 도핑되는 것을 특징으로 하는 감광성 전자장치.
  16. 제11항에 있어서, 상기 단결정막과 대향하는 측면상에 상기 단결정 실리콘 기판과 결합되어 저항성 접촉을 이루는 도전성 전극을 포함하는 것을 특징으로 하는 감광성 전자장치.
  17. 제11항에 있어서, 상기 제1전극은 상기 단결정막의 표면영역은 작은 부분만을 커버하는것을 특징으로 하는 감광성 전자장치.
  18. 제11항에 있어서, 상기 제 1전국과 상기 막위에서 결합배치된 반 반사 코팅을 포함하는 것을 특징으로 하는 감광성 전자장치.
  19. 실리콘 기판과 직접 접촉하여 에피택셜 방식으로 배치된 갈륨 아세나이드 또는 갈륨 알류미늄 아세나이드의 단결정막을 구비하는 실제로 단결정인 실리콘 기판과, 미세전자 장치와 접촉하는 수단을 포함하는 것을 특징으로 하는 미세전자장치.
  20. 제19항에 따른 미세전자장치를 포함하는 것을 특징으로 하는 다이오드.
  21. 제19항에 따른 미세전자장치를 포함하는 것을 특징으로 하는 트랜지스터
  22. 제19항에 따른 미세전자장치를 포함하는 것을 특징으로 하는 집적회로.
  23. 단결정 실리콘 기판과, 상기 실리콘 기판과 직접 접촉하여 배치된 갈륨 아세니이드 또는 갈륨 알루미늄 아세나이드로 구성된 단결정막을 포함하는 합성물의 형성방법으로서, 수소가 지나가는 반응기 용기에서 상기 기판을 가열하고, 아르신과, 갈륨, 알루미늄 또는 그 혼합물의 유기금속 화합물과의 기체형태 혼합물을 상기 수소가 지나는 반응기 용기에 유입시키며, 경우에 따라서는 전이가 5 : 1보다 상당히 낮은 순간비값에서부터 최고, 연속성장을 위해 이용된 비의 값까지 전이되는 상화에서, 아르신대 갈륨 또는 아르신대 갈륨과 알루미늄합의 비에 있어서의 초기전이를 도입함으로써 실리콘 표면에 대해 사전 조건 설정하며, 갈륨 아세나이드 또는 갈륨 아세나이드의 단결정막을 상기 산전 조건 설정된 실리콘 표면사아에 에피택셜 방식으로 증착하는 단계를 포함하는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물 형성방법.
  24. 제23항에 있어서, 상기 실리콘 기판의 온도는 약 620℃로 유지되고, 상기 반응기 용기의 벽의 온도는 상기 단결정막을 에피택셜 방식으로 증착하는 동안 100℃정도나 그 이하의 낮은 값으로 유지되는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물 형성방법.
  25. 제23항에 있어서, 상기 기판을 상기 반응기 용기에 로딩하기전에 상기 실리콘 기판을 HF용액으로 처리하는 단계를 포함하는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물 형성방법.
  26. 제23항에 있어서, 상기 유기금속원은 트리메틸갈륨, 트리에틸갈륨, 트리메틸알루미늄 및 그 혼합물로 이루어진 집단에서 선택된 알킬 화합물을 포함하는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물 형성방법.
  27. 제23항에 있어서, 필수적으로 갈륨 아세나이드로 이루어진 단결정막을 형성하기 위한 방법으로서, 상기 실리콘 기판의 온도가 상기 증착기간동안 약 620℃로 유지되는 것을 특징으로 하는 단결정 실리콘기판과 단결정막의 합성물 형성방법.
  28. 제23항에 있어서, 갈륨이 풍부한 갈륨 알루미늄 아세나이드 합금의 단결정막을 제조하기 위한 방법으로서, 상기 실리콘 기판의 온도는 상기 증착기간동안 약 620℃로 유지되는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물 형성방법.
  29. 제23항에 있어서, 필수적으로 알루미늄이 풍부한 갈륨 알루미늄 아세나이드 합금으로 이루어진 단결정막을 제조하기 위한 방법으로서, 상기 온도는 상기 증착기간동안 약 620℃로 유지되는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물 형성방법.
  30. 제23항에 있어서, 필수적으로 50 : 50의 갈륨 알루미늄 아세나이드로 이루어진 단결정막을 제조하기 위한 방법으로서 상기 온도는 상기 증착기간동안 약 620℃로 유지되는 것을 특징으로 하는 단결정 실리콘 기판과 단결정 막의 합성물 형성방법.
  31. 제23항에 있어서, 상기 단결정막의 증착기간동안 도너도편트를 기체형태 혼합물에 유입하는 단계를 포함하는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물 형성방법.
  32. 제31항에 있어서, 상기 도편트는 셀레늄을 포함하는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성물 형성방법.
  33. 제31항에 있어서, 상기 도펀트는 아연을 포함하는 것을 특징으로 하는 단결정막의 합성물 형성방법.
  34. 제31항에 있어서, 상기 도펀트는 카드뮴을 포함하는 것을 특징으로 하는 단결정 실리콘 기판과 단결정막의 합성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850700404A 1984-04-27 1985-04-19 단결정 실리콘 기판과 단결정 막의 합성물 및 그 형성방법 KR940001249B1 (ko)

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US4588451A (en) 1986-05-13
EP0179138A4 (en) 1988-12-19
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DE3587853D1 (de) 1994-07-21

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