DE69018307T2 - Verfahren zur Herstellung von Kontakten in Halbleiterbauelementen. - Google Patents
Verfahren zur Herstellung von Kontakten in Halbleiterbauelementen.Info
- Publication number
- DE69018307T2 DE69018307T2 DE69018307T DE69018307T DE69018307T2 DE 69018307 T2 DE69018307 T2 DE 69018307T2 DE 69018307 T DE69018307 T DE 69018307T DE 69018307 T DE69018307 T DE 69018307T DE 69018307 T2 DE69018307 T2 DE 69018307T2
- Authority
- DE
- Germany
- Prior art keywords
- contacts
- production
- semiconductor components
- semiconductor
- components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11712889 | 1989-05-09 | ||
JP5891890 | 1990-03-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69018307D1 DE69018307D1 (de) | 1995-05-11 |
DE69018307T2 true DE69018307T2 (de) | 1995-08-03 |
Family
ID=26399931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69018307T Expired - Fee Related DE69018307T2 (de) | 1989-05-09 | 1990-05-09 | Verfahren zur Herstellung von Kontakten in Halbleiterbauelementen. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0397131B1 (de) |
KR (1) | KR930005947B1 (de) |
DE (1) | DE69018307T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69323513T2 (de) * | 1992-07-27 | 1999-08-12 | St Microelectronics Inc | Planaxer Kontakt mit einer Lücke |
US6291343B1 (en) * | 1994-11-14 | 2001-09-18 | Applied Materials, Inc. | Plasma annealing of substrates to improve adhesion |
US6251758B1 (en) | 1994-11-14 | 2001-06-26 | Applied Materials, Inc. | Construction of a film on a semiconductor wafer |
US6156382A (en) * | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Chemical vapor deposition process for depositing tungsten |
US6221174B1 (en) | 1999-02-11 | 2001-04-24 | Applied Materials, Inc. | Method of performing titanium/titanium nitride integration |
KR100369354B1 (ko) * | 1999-06-30 | 2003-01-24 | 주식회사 하이닉스반도체 | 저에너지 건식 세정 및 급속열처리 공정을 이용한 콘택 저항감소 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4338354A (en) * | 1980-04-28 | 1982-07-06 | International Standard Electric Corporation | Coating powdered material |
JPS5747706A (en) * | 1980-09-04 | 1982-03-18 | Toshio Hirai | Lump of silicon nitride containing ti and its manufacture |
JPS57157525A (en) * | 1981-03-23 | 1982-09-29 | Fujitsu Ltd | Surface treating method |
JPS58172206A (ja) * | 1982-04-02 | 1983-10-11 | Shin Etsu Chem Co Ltd | 金属窒化物の製造方法 |
DE3485769T2 (de) * | 1983-02-25 | 1992-12-24 | Liburdi Engineering | Chemische dampfabscheidung von ueberzuegen aus metallischen verbindungen unter verwendung von metallischen subhalogeniden. |
EP0174743A3 (de) * | 1984-09-05 | 1988-06-08 | Morton Thiokol, Inc. | Verfahren zur Abscheidung von Dünnfilmen aus Nitriden der Übergangsmetalle |
JPS6372881A (ja) * | 1986-09-16 | 1988-04-02 | Toshiba Corp | 薄膜形成方法 |
JPH0818919B2 (ja) * | 1987-04-03 | 1996-02-28 | 東芝タンガロイ株式会社 | 収率にすぐれたウイスカ−の製造方法 |
JPH089784B2 (ja) * | 1987-04-28 | 1996-01-31 | 東芝タンガロイ株式会社 | 表面精度のすぐれた被覆鉄基合金及びその製造方法 |
DE3815569A1 (de) * | 1987-05-07 | 1988-12-29 | Intel Corp | Verfahren zum selektiven abscheiden eines leitenden materials bei der herstellung integrierter schaltungen |
-
1990
- 1990-05-09 DE DE69018307T patent/DE69018307T2/de not_active Expired - Fee Related
- 1990-05-09 KR KR1019900006563A patent/KR930005947B1/ko not_active IP Right Cessation
- 1990-05-09 EP EP90108719A patent/EP0397131B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0397131B1 (de) | 1995-04-05 |
EP0397131A3 (de) | 1991-03-27 |
DE69018307D1 (de) | 1995-05-11 |
KR900019159A (ko) | 1990-12-24 |
EP0397131A2 (de) | 1990-11-14 |
KR930005947B1 (ko) | 1993-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |