DE69005711D1 - Verfahren zur Herstellung von P-Typ-II-VI-Halbleitern. - Google Patents

Verfahren zur Herstellung von P-Typ-II-VI-Halbleitern.

Info

Publication number
DE69005711D1
DE69005711D1 DE90305859T DE69005711T DE69005711D1 DE 69005711 D1 DE69005711 D1 DE 69005711D1 DE 90305859 T DE90305859 T DE 90305859T DE 69005711 T DE69005711 T DE 69005711T DE 69005711 D1 DE69005711 D1 DE 69005711D1
Authority
DE
Germany
Prior art keywords
semiconductors
production
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90305859T
Other languages
English (en)
Other versions
DE69005711T2 (de
Inventor
G Sanjiv Kamath
Owen K Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DirecTV Group Inc
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE69005711D1 publication Critical patent/DE69005711D1/de
Publication of DE69005711T2 publication Critical patent/DE69005711T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE90305859T 1989-06-15 1990-05-30 Verfahren zur Herstellung von P-Typ-II-VI-Halbleitern. Expired - Fee Related DE69005711T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/366,827 US5028561A (en) 1989-06-15 1989-06-15 Method of growing p-type group II-VI material

Publications (2)

Publication Number Publication Date
DE69005711D1 true DE69005711D1 (de) 1994-02-17
DE69005711T2 DE69005711T2 (de) 1994-04-28

Family

ID=23444718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90305859T Expired - Fee Related DE69005711T2 (de) 1989-06-15 1990-05-30 Verfahren zur Herstellung von P-Typ-II-VI-Halbleitern.

Country Status (5)

Country Link
US (1) US5028561A (de)
EP (1) EP0403110B1 (de)
JP (1) JPH0817155B2 (de)
DE (1) DE69005711T2 (de)
IL (1) IL94430A (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR9205993A (pt) * 1991-05-15 1994-08-02 Minnesota Mining & Mfg Diodo laser semicondutor, processo para produzir um contato ôhmico com um corpo semicondutor e contato ôhmico
US5213998A (en) * 1991-05-15 1993-05-25 Minnesota Mining And Manufacturing Company Method for making an ohmic contact for p-type group II-VI compound semiconductors
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
US5510644A (en) * 1992-03-23 1996-04-23 Martin Marietta Corporation CDTE x-ray detector for use at room temperature
US5273931A (en) * 1992-06-04 1993-12-28 North American Philips Corporation Method of growing epitaxial layers of N-doped II-VI semiconductor compounds
JPH0653257A (ja) * 1992-06-05 1994-02-25 Nec Corp 不純物ドーピング方法及び不純物ドーピングによるキャリア濃度制御方法
JPH06244222A (ja) * 1993-02-16 1994-09-02 Nec Corp フォトアシストＭＢＥ法によるテルル化カドミウムのｐ型キャリア濃度制御方法
US5306386A (en) * 1993-04-06 1994-04-26 Hughes Aircraft Company Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates
JP2550870B2 (ja) * 1993-07-14 1996-11-06 日本電気株式会社 テルル化水銀カドミウム分子線エピタキシャル成長における組成及びドーピング濃度制御方法
US5398641A (en) * 1993-07-27 1995-03-21 Texas Instruments Incorporated Method for p-type doping of semiconductor structures formed of group II and group VI elements
US5492080A (en) * 1993-12-27 1996-02-20 Matsushita Electric Industrial Co., Ltd. Crystal-growth method and semiconductor device production method using the crystal-growth method
JPH07240561A (ja) * 1994-02-23 1995-09-12 Hewlett Packard Co <Hp> Ｉｉ−ｖｉ族系半導体レーザおよびその製造方法
US5882805A (en) * 1994-05-18 1999-03-16 The United States Of America As Represented By The Secretary Of The Navy Chemical vapor deposition of II/VI semiconductor material using triisopropylindium as a dopant
US5998809A (en) * 1995-10-06 1999-12-07 Raytheon Company Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter
US6815736B2 (en) 2001-02-09 2004-11-09 Midwest Research Institute Isoelectronic co-doping
US8298856B2 (en) * 2008-07-17 2012-10-30 Uriel Solar, Inc. Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
EP2481094A4 (de) * 2009-12-10 2017-08-09 Uriel Solar Inc. Leistungsstarke polykristalline cdte-dünnschicht-halbleiter-pv-zellstrukturen zur erzeugung von solarstrom
US9076915B2 (en) 2010-03-08 2015-07-07 Alliance For Sustainable Energy, Llc Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices
RU2511279C1 (ru) * 2012-10-22 2014-04-10 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Нижегородский Государственный Университет Им. Н.И. Лобачевского" Способ напыления в вакууме структур для приборов электронной техники, способ регулирования концентрации легирующих примесей при выращивании таких структур и резистивный источник паров напыляемого материала и легирующей примеси для реализации указанного способа регулирования, а также основанный на использовании этого источника паров способ напыления в вакууме кремний-германиевых структур
RU2699949C1 (ru) * 2019-02-08 2019-09-11 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" Способ настройки эпитаксиального выращивания в вакууме легированных слоёв кремния и резистивный испарительный блок для его осуществления

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4159919A (en) * 1978-01-16 1979-07-03 Bell Telephone Laboratories, Incorporated Molecular beam epitaxy using premixing
US4411728A (en) * 1981-03-30 1983-10-25 Agency Of Industrial Science & Technology Method for manufacture of interdigital periodic structure device
US4392453A (en) * 1981-08-26 1983-07-12 Varian Associates, Inc. Molecular beam converters for vacuum coating systems
FR2578095B1 (fr) * 1985-02-28 1988-04-15 Avitaya Francois D Procede et dispositif de depot par croissance epitaxiale d'un materiau dope
US4735910A (en) * 1985-09-19 1988-04-05 Matsushita Electric Industrial Co., Ltd. In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate
JPS6279630A (ja) * 1985-10-02 1987-04-13 Sanyo Electric Co Ltd Ｐ型ＺｎＳｅの製造方法
JPH0251240A (ja) * 1988-08-12 1990-02-21 Sanyo Electric Co Ltd Ｐ型ＺｎＳｅの製造方法

Also Published As

Publication number Publication date
IL94430A0 (en) 1991-03-10
EP0403110B1 (de) 1994-01-05
JPH0330418A (ja) 1991-02-08
US5028561A (en) 1991-07-02
IL94430A (en) 1995-11-27
EP0403110A1 (de) 1990-12-19
DE69005711T2 (de) 1994-04-28
JPH0817155B2 (ja) 1996-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: HUGHES ELECTRONICS CORP., EL SEGUNDO, CALIF., US

8339 Ceased/non-payment of the annual fee