BR9205993A - Diodo laser semicondutor, processo para produzir um contato ôhmico com um corpo semicondutor e contato ôhmico - Google Patents

Diodo laser semicondutor, processo para produzir um contato ôhmico com um corpo semicondutor e contato ôhmico

Info

Publication number
BR9205993A
BR9205993A BR9205993A BR9205993A BR9205993A BR 9205993 A BR9205993 A BR 9205993A BR 9205993 A BR9205993 A BR 9205993A BR 9205993 A BR9205993 A BR 9205993A BR 9205993 A BR9205993 A BR 9205993A
Authority
BR
Brazil
Prior art keywords
ohmic contact
produce
laser diode
semiconductor laser
semiconductor
Prior art date
Application number
BR9205993A
Other languages
English (en)
Inventor
Michael A Haase
Hwa Cheng
James M Depuydt
Jin Qiu
Original Assignee
Minnesota Mining & Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/700,606 external-priority patent/US5274269A/en
Priority claimed from US07/700,580 external-priority patent/US5213998A/en
Application filed by Minnesota Mining & Mfg filed Critical Minnesota Mining & Mfg
Publication of BR9205993A publication Critical patent/BR9205993A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3059—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping in II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
BR9205993A 1991-05-15 1992-05-12 Diodo laser semicondutor, processo para produzir um contato ôhmico com um corpo semicondutor e contato ôhmico BR9205993A (pt)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US70060191A 1991-05-15 1991-05-15
US07/700,606 US5274269A (en) 1991-05-15 1991-05-15 Ohmic contact for p-type group II-IV compound semiconductors
US07/700,580 US5213998A (en) 1991-05-15 1991-05-15 Method for making an ohmic contact for p-type group II-VI compound semiconductors
PCT/US1992/003782 WO1992021170A2 (en) 1991-05-15 1992-05-12 Blue-green laser diode

Publications (1)

Publication Number Publication Date
BR9205993A true BR9205993A (pt) 1994-08-02

Family

ID=27418708

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9205993A BR9205993A (pt) 1991-05-15 1992-05-12 Diodo laser semicondutor, processo para produzir um contato ôhmico com um corpo semicondutor e contato ôhmico

Country Status (16)

Country Link
EP (2) EP0584236B1 (pt)
JP (1) JP3269558B2 (pt)
KR (1) KR100247682B1 (pt)
CN (2) CN1321488C (pt)
AU (1) AU654726B2 (pt)
BR (1) BR9205993A (pt)
CA (1) CA2109310C (pt)
DE (1) DE69220942T2 (pt)
ES (1) ES2104931T3 (pt)
FI (1) FI110971B (pt)
HK (1) HK1001353A1 (pt)
IL (1) IL101857A (pt)
MY (2) MY110622A (pt)
RU (1) RU2127478C1 (pt)
SG (1) SG46466A1 (pt)
WO (1) WO1992021170A2 (pt)

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US5396103A (en) * 1991-05-15 1995-03-07 Minnesota Mining And Manufacturing Company Graded composition ohmic contact for P-type II-VI semiconductors
US5341001A (en) * 1992-02-13 1994-08-23 Matsushita Electric Industrial Co., Ltd. Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode
JP3453787B2 (ja) * 1993-06-18 2003-10-06 ソニー株式会社 半導体レーザ及びその製造方法
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
MY111898A (en) * 1993-07-02 2001-02-28 Sony Corp Semiconductor laser
US5640409A (en) * 1993-07-02 1997-06-17 Sony Corporation Semiconductor laser
JPH07231142A (ja) * 1994-02-18 1995-08-29 Mitsubishi Electric Corp 半導体発光素子
JPH07263372A (ja) * 1994-03-24 1995-10-13 Sharp Corp Ｉｉ−ｖｉ族化合物半導体装置およびその製造方法
US5442204A (en) * 1994-05-12 1995-08-15 Philips Electronics North America Corporation III-V Semiconductor heterostructure contacting a P-type II-VI compound
US6876003B1 (en) 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
DE10260183A1 (de) * 2002-12-20 2004-07-15 Osram Opto Semiconductors Gmbh Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator
JP4085953B2 (ja) * 2003-10-22 2008-05-14 住友電気工業株式会社 半導体光素子
JP4411540B2 (ja) * 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
TWI649895B (zh) * 2010-04-30 2019-02-01 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
CN102185058B (zh) * 2011-04-02 2013-09-25 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
CN102185060B (zh) * 2011-04-15 2014-07-16 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
WO2014188149A1 (en) 2013-05-20 2014-11-27 Milan Momcilo Popovich Holographic waveguide eye tracker
US10437064B2 (en) * 2015-01-12 2019-10-08 Digilens Inc. Environmentally isolated waveguide display
WO2016113533A2 (en) 2015-01-12 2016-07-21 Milan Momcilo Popovich Holographic waveguide light field displays
CN113759555A (zh) 2015-10-05 2021-12-07 迪吉伦斯公司 波导显示器
DE102019205376A1 (de) * 2019-04-15 2020-10-15 Forschungszentrum Jülich Herstellen eines ohmschen Kontakts sowie elektronisches Bauelement mit ohmschem Kontakt
JP7207365B2 (ja) * 2019-06-19 2023-01-18 株式会社デンソー 半導体レーザ光源モジュール、半導体レーザ装置
KR20220054386A (ko) 2019-08-29 2022-05-02 디지렌즈 인코포레이티드. 진공 브래그 격자 및 이의 제조 방법
DE102021004609A1 (de) 2021-09-11 2023-03-16 Eques Consulting GmbH Vorrichtung und damit durchführbares Verfahren zur non-invasiven Konzentrationsbestimmung von Komponenten im menschlichen Blutkreislauf und Verwendung des Verfahrens.
CN115498077A (zh) * 2022-09-22 2022-12-20 深圳市思坦科技有限公司 红光微型led芯片制备方法、红光微型led芯片以及显示装置

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Publication number Priority date Publication date Assignee Title
JPS5863183A (ja) * 1981-10-09 1983-04-14 Semiconductor Res Found ２−６族間化合物の結晶成長法
JPS60178684A (ja) * 1984-02-24 1985-09-12 Nec Corp 半導体レ−ザ
JPH0728052B2 (ja) * 1986-01-27 1995-03-29 株式会社東芝 半導体発光素子およびその製造方法
JPS63185077A (ja) * 1987-01-27 1988-07-30 Matsushita Electric Ind Co Ltd 青色発光ダイオ−ド
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JPS63288072A (ja) * 1987-05-20 1988-11-25 Seiko Epson Corp 半導体発光装置
JPH01140663A (ja) * 1987-11-27 1989-06-01 Toshiba Corp 半導体装置の電極
JPH01184977A (ja) * 1988-01-20 1989-07-24 Inkiyuubeetaa Japan:Kk 可視発光半導体レーザ装置
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US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
US5028561A (en) * 1989-06-15 1991-07-02 Hughes Aircraft Company Method of growing p-type group II-VI material
US5248631A (en) * 1990-08-24 1993-09-28 Minnesota Mining And Manufacturing Company Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals

Also Published As

Publication number Publication date
JPH06508003A (ja) 1994-09-08
EP0670593A3 (en) 1996-02-07
EP0584236B1 (en) 1997-07-16
EP0670593A2 (en) 1995-09-06
WO1992021170A2 (en) 1992-11-26
AU2026492A (en) 1992-12-30
CA2109310A1 (en) 1992-11-16
CN1321488C (zh) 2007-06-13
WO1992021170A3 (en) 1993-03-04
MY110622A (en) 1998-09-30
JP3269558B2 (ja) 2002-03-25
AU654726B2 (en) 1994-11-17
EP0584236A1 (en) 1994-03-02
FI110971B (fi) 2003-04-30
CN1097317C (zh) 2002-12-25
DE69220942T2 (de) 1998-03-05
IL101857A0 (en) 1992-12-30
KR100247682B1 (ko) 2000-03-15
CN1066936A (zh) 1992-12-09
CN1474485A (zh) 2004-02-11
ES2104931T3 (es) 1997-10-16
FI935022A0 (fi) 1993-11-12
HK1001353A1 (en) 1998-06-12
FI935022A (fi) 1993-11-12
CA2109310C (en) 2001-10-02
IL101857A (en) 1998-12-06
DE69220942D1 (de) 1997-08-21
SG46466A1 (en) 1998-02-20
RU2127478C1 (ru) 1999-03-10
MY111574A (en) 2000-08-30

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FF Decision: intention to grant
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B24C Patent annual fee: request for for restoration

Free format text: REFERENTE A 16A,17A,18A E 19A ANUIDADES

B24H Lapse because of non-payment of annual fees (definitively: art 78 iv lpi)
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