DE68909408D1 - Integrierte Halbleiterdiodenlaser und Photodiodenstruktur. - Google Patents

Integrierte Halbleiterdiodenlaser und Photodiodenstruktur.

Info

Publication number
DE68909408D1
DE68909408D1 DE89810577T DE68909408T DE68909408D1 DE 68909408 D1 DE68909408 D1 DE 68909408D1 DE 89810577 T DE89810577 T DE 89810577T DE 68909408 T DE68909408 T DE 68909408T DE 68909408 D1 DE68909408 D1 DE 68909408D1
Authority
DE
Germany
Prior art keywords
diode laser
integrated semiconductor
semiconductor diode
photodiode structure
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89810577T
Other languages
English (en)
Other versions
DE68909408T2 (de
Inventor
Peter Leo Dr Buchmann
Christoph Stephan Dr Harder
Otto Dr Voegeli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68909408D1 publication Critical patent/DE68909408D1/de
Application granted granted Critical
Publication of DE68909408T2 publication Critical patent/DE68909408T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE89810577T 1989-07-27 1989-07-27 Integrierte Halbleiterdiodenlaser und Photodiodenstruktur. Expired - Fee Related DE68909408T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP89810577A EP0410067B1 (de) 1989-07-27 1989-07-27 Integrierte Halbleiterdiodenlaser und Photodiodenstruktur

Publications (2)

Publication Number Publication Date
DE68909408D1 true DE68909408D1 (de) 1993-10-28
DE68909408T2 DE68909408T2 (de) 1994-04-21

Family

ID=8203169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89810577T Expired - Fee Related DE68909408T2 (de) 1989-07-27 1989-07-27 Integrierte Halbleiterdiodenlaser und Photodiodenstruktur.

Country Status (5)

Country Link
US (1) US5032879A (de)
EP (1) EP0410067B1 (de)
JP (1) JPH07105574B2 (de)
CA (1) CA2018502C (de)
DE (1) DE68909408T2 (de)

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US5331455A (en) * 1991-10-31 1994-07-19 The Research Foundation Of State University Of New York Electrical pulse operated laser sampling light amplifier
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US5258991A (en) * 1992-03-13 1993-11-02 Eastman Kodak Company Monolithic laser diode and monitor photodetector
JPH0661583A (ja) * 1992-08-11 1994-03-04 Sony Corp 半導体レーザ
JPH07202263A (ja) * 1993-12-28 1995-08-04 Ricoh Co Ltd 端面発光型発光ダイオード、アレイ状光源、側面受光型受光素子、受発光素子、端面発光型発光ダイオードアレイ状光源
DE19502252A1 (de) * 1994-01-26 1995-07-27 Ahlers Horst Dr Ing Habil Temperatursensor
JPH08107252A (ja) * 1994-10-06 1996-04-23 Mitsubishi Electric Corp 半導体レーザ装置，及び半導体レーザアレイ装置
EP0722207A1 (de) * 1995-01-13 1996-07-17 Siemens Aktiengesellschaft Integriert-optische Anordnung aus Halbleiterlaser und Monitordetektor
JP3734900B2 (ja) * 1996-10-31 2006-01-11 古河電気工業株式会社 半導体光導波路構造、光デバイス、及び、それらの製造方法
CN1203374A (zh) * 1997-06-25 1998-12-30 松下电器产业株式会社 光收发信设备及其制造方法以及光半导体组件
US6332719B1 (en) 1997-06-25 2001-12-25 Matsushita Electric Industrial Co., Ltd. Optical transmitter/receiver apparatus, method for fabricating the same and optical semiconductor module
JPH11163383A (ja) * 1997-11-25 1999-06-18 Oki Electric Ind Co Ltd 半導体受光素子
US6151344A (en) * 1998-03-30 2000-11-21 Motorola, Inc. Automatic power control of semiconductor laser
US6115398A (en) * 1998-05-18 2000-09-05 Motorola, Inc. Automatic power control of a semiconductor laser array
JP3628541B2 (ja) * 1999-03-01 2005-03-16 沖電気工業株式会社 半導体装置及び半導体装置の製造方法
US6304587B1 (en) 1999-06-14 2001-10-16 Corning Incorporated Buried ridge semiconductor laser with aluminum-free confinement layer
US6654534B1 (en) * 2000-11-13 2003-11-25 Bookham Technology, Plc Electrode, termination for reduced local heating in an optical device
JPWO2002063730A1 (ja) * 2001-02-05 2004-06-10 住友電気工業株式会社 光送信器
EP1680843A4 (de) * 2003-10-20 2009-05-06 Binoptics Corp Photonische einrichtung mit oberflächenemission und empfang
US7598527B2 (en) * 2004-01-20 2009-10-06 Binoptics Corporation Monitoring photodetector for integrated photonic devices
US8711063B2 (en) * 2005-03-11 2014-04-29 The Invention Science Fund I, Llc Self assembly of elements for displays
US9153163B2 (en) * 2005-03-11 2015-10-06 The Invention Science Fund I, Llc Self assembly of elements for displays
US8860635B2 (en) * 2005-04-04 2014-10-14 The Invention Science Fund I, Llc Self assembling display with substrate
US8334819B2 (en) * 2005-03-11 2012-12-18 The Invention Science Fund I, Llc Superimposed displays
US7977130B2 (en) 2006-08-03 2011-07-12 The Invention Science Fund I, Llc Method of assembling displays on substrates
US20060202944A1 (en) * 2005-03-11 2006-09-14 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Elements for self assembling displays
US8300007B2 (en) * 2005-03-11 2012-10-30 The Invention Science Fund I, Llc Self assembling display with substrate
US8390537B2 (en) * 2005-03-11 2013-03-05 The Invention Science Fund I, Llc Method of assembling displays on substrates
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
US8687664B2 (en) 2006-03-08 2014-04-01 Agere Systems Llc Laser assembly with integrated photodiode
GB2439973A (en) * 2006-07-13 2008-01-16 Sharp Kk Modifying the optical properties of a nitride optoelectronic device
US8934512B2 (en) * 2011-12-08 2015-01-13 Binoptics Corporation Edge-emitting etched-facet lasers
EP4228109A3 (de) 2012-05-08 2023-10-25 MACOM Technology Solutions Holdings, Inc. Laser mit strahlformmodifikation
JP5758359B2 (ja) * 2012-08-09 2015-08-05 株式会社東芝 光配線デバイスおよびその製造方法
US8854929B1 (en) 2013-03-06 2014-10-07 Western Digital Technologies, Inc. Disk drive calibrating laser power and write current for heat assisted magnetic recording
US9105807B2 (en) 2013-04-22 2015-08-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor optical emitting device with grooved substrate providing multiple angled light emission paths
US9747928B1 (en) 2014-09-25 2017-08-29 Western Digital Technologies, Inc. Data storage device modifying write operation when a laser mode hop is detected
CN204947313U (zh) 2015-08-24 2016-01-06 宁波环球广电科技有限公司 多通道阵列光纤激光器
CN204795049U (zh) 2015-08-24 2015-11-18 宁波环球广电科技有限公司 一种光发射模块
TWM523866U (zh) * 2015-09-30 2016-06-11 Applied Optoelectronics Inc 光發射模組
JP2021188070A (ja) * 2020-05-27 2021-12-13 三菱重工業株式会社 積層造形方法及び積層造形装置
CN114784131B (zh) * 2022-04-11 2023-05-16 西安微电子技术研究所 一种光敏二极管、一种光敏运放电路及一种光敏芯片

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JPS5768087A (en) * 1980-10-15 1982-04-26 Nec Corp Photocoupling semiconductor device
JPS59103394A (ja) * 1982-12-06 1984-06-14 Agency Of Ind Science & Technol 検出器付レ−ザダイオ−ド
JPS59125658A (ja) * 1983-01-06 1984-07-20 Nec Corp モニタ集積型半導体発光素子
DE3316271A1 (de) * 1983-04-29 1984-10-31 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zur planaren optokopplung
JPS6180887A (ja) * 1984-09-27 1986-04-24 Nec Corp 複合半導体レ−ザ装置
JPS6195591A (ja) * 1984-10-16 1986-05-14 Sony Corp 半導体レ−ザ
US4817109A (en) * 1985-12-10 1989-03-28 501 Sharp Kabushiki Kaisha External resonator type semiconductor laser apparatus
JPH0654823B2 (ja) * 1986-02-21 1994-07-20 日本電信電話株式会社 発・受光素子
US4698129A (en) * 1986-05-01 1987-10-06 Oregon Graduate Center Focused ion beam micromachining of optical surfaces in materials

Also Published As

Publication number Publication date
EP0410067B1 (de) 1993-09-22
CA2018502A1 (en) 1991-01-27
JPH07105574B2 (ja) 1995-11-13
US5032879A (en) 1991-07-16
CA2018502C (en) 1994-01-11
JPH03179792A (ja) 1991-08-05
DE68909408T2 (de) 1994-04-21
EP0410067A1 (de) 1991-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee