DE3750076D1 - Verfahren zur Veränderung der Eigenschften von Halbleitern. - Google Patents

Verfahren zur Veränderung der Eigenschften von Halbleitern.

Info

Publication number
DE3750076D1
DE3750076D1 DE3750076T DE3750076T DE3750076D1 DE 3750076 D1 DE3750076 D1 DE 3750076D1 DE 3750076 T DE3750076 T DE 3750076T DE 3750076 T DE3750076 T DE 3750076T DE 3750076 D1 DE3750076 D1 DE 3750076D1
Authority
DE
Germany
Prior art keywords
semiconductors
changing
properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3750076T
Other languages
English (en)
Other versions
DE3750076T2 (de
Inventor
John E Epler
Robert D Burnham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE3750076D1 publication Critical patent/DE3750076D1/de
Publication of DE3750076T2 publication Critical patent/DE3750076T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
DE3750076T 1986-11-21 1987-11-18 Verfahren zur Veränderung der Eigenschften von Halbleitern. Expired - Fee Related DE3750076T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/933,666 US4771010A (en) 1986-11-21 1986-11-21 Energy beam induced layer disordering (EBILD)

Publications (2)

Publication Number Publication Date
DE3750076D1 true DE3750076D1 (de) 1994-07-21
DE3750076T2 DE3750076T2 (de) 1995-01-05

Family

ID=25464329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750076T Expired - Fee Related DE3750076T2 (de) 1986-11-21 1987-11-18 Verfahren zur Veränderung der Eigenschften von Halbleitern.

Country Status (4)

Country Link
US (1) US4771010A (de)
EP (1) EP0269359B1 (de)
JP (1) JP2608567B2 (de)
DE (1) DE3750076T2 (de)

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US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
US4871690A (en) * 1986-01-21 1989-10-03 Xerox Corporation Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects
JPH0748560B2 (ja) * 1986-11-18 1995-05-24 株式会社東芝 半導体受光装置の製造方法
JPH073908B2 (ja) * 1987-07-16 1995-01-18 三菱電機株式会社 半導体発光装置の製造方法
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH01143285A (ja) * 1987-11-28 1989-06-05 Mitsubishi Electric Corp 半導体超格子の無秩序化方法及び半導体レーザ装置
JPH0775265B2 (ja) * 1988-02-02 1995-08-09 三菱電機株式会社 半導体レーザおよびその製造方法
US4870652A (en) * 1988-07-08 1989-09-26 Xerox Corporation Monolithic high density arrays of independently addressable semiconductor laser sources
US4883769A (en) * 1988-08-18 1989-11-28 The United States Of America As Represented By The Secretary Of The Army Method of making a multidimensional quantum-well array
US5031185A (en) * 1988-11-17 1991-07-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a disordered superlattice
JPH02196486A (ja) * 1989-01-24 1990-08-03 Mitsubishi Electric Corp 半導体レーザの製造方法
US5563094A (en) * 1989-03-24 1996-10-08 Xerox Corporation Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
US5013684A (en) * 1989-03-24 1991-05-07 Xerox Corporation Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth
DE3914001A1 (de) * 1989-04-27 1990-10-31 Siemens Ag Halbleiterlaser mit eingepraegtem modenspektrum und verfahren zu dessen herstellung
US5238868A (en) * 1989-11-30 1993-08-24 Gte Laboratories Incorporated Bandgap tuning of semiconductor quantum well structures
US5102825A (en) * 1990-01-25 1992-04-07 The United States Of America As Represented By The United States Department Of Energy Method of making an ion-implanted planar-buried-heterostructure diode laser
US5126281A (en) * 1990-09-11 1992-06-30 Hewlett-Packard Company Diffusion using a solid state source
US5225368A (en) * 1991-02-08 1993-07-06 The United States Of America As Represented By The United States Department Of Energy Method of producing strained-layer semiconductor devices via subsurface-patterning
FR2675308A1 (fr) * 1991-04-12 1992-10-16 Thomson Csf Procede de realisation de dispositifs optoelectroniques a semiconducteurs.
US5225371A (en) * 1992-03-17 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Laser formation of graded junction devices
US5721150A (en) * 1993-10-25 1998-02-24 Lsi Logic Corporation Use of silicon for integrated circuit device interconnection by direct writing of patterns therein
JPH07162086A (ja) * 1993-12-10 1995-06-23 Mitsubishi Electric Corp 半導体レーザの製造方法
US5395793A (en) * 1993-12-23 1995-03-07 National Research Council Of Canada Method of bandgap tuning of semiconductor quantum well structures
US5451552A (en) * 1994-05-13 1995-09-19 Hughes Aircraft Company Method for improvement of optical quality and reduction of background doping in gainSB/INAS superlattices
US5883000A (en) * 1995-05-03 1999-03-16 Lsi Logic Corporation Circuit device interconnection by direct writing of patterns therein
US5682455A (en) * 1996-02-29 1997-10-28 Northern Telecom Limited Semiconductor optical waveguide
US5841179A (en) * 1996-08-28 1998-11-24 Advanced Micro Devices, Inc. Conductive layer with anti-reflective surface portion
DE19934089A1 (de) * 1999-07-19 2001-01-25 Univ Schiller Jena Verfahren zur Erzeugung elektrisch leitender Bereiche in mehrkomponentigen Materialien
US6878562B2 (en) 2000-10-20 2005-04-12 Phosistor Technologies, Incorporated Method for shifting the bandgap energy of a quantum well layer
US6878959B2 (en) * 2002-11-22 2005-04-12 Agilent Technologies, Inc. Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
US7209506B2 (en) 2003-07-31 2007-04-24 Osram Opto Semiconductors Gmbh Optically pumped semiconductor device and method for producing it
DE10341085A1 (de) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleitervorrichtung und Verfahren zu deren Herstellung
GB0509727D0 (en) * 2005-05-13 2005-06-22 Renishaw Plc Method and apparatus for scale manufacture
DE102010010813A1 (de) * 2010-03-03 2011-09-08 Centrotherm Photovoltaics Ag Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung
US8542437B1 (en) * 2010-03-09 2013-09-24 Translucent, Inc. Earth abundant photonic structures
EP3745471A1 (de) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Verfahren zur laserbehandlung eines halbleiterwafers mit algainp-leds zur erhöhung ihrer lichterzeugungseffizienz
CN113300211B (zh) * 2021-06-24 2022-07-15 西安嘉合超亿光电科技有限公司 半导体激光器封装结构及其制备方法

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US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4159414A (en) * 1978-04-25 1979-06-26 Massachusetts Institute Of Technology Method for forming electrically conductive paths
US4181538A (en) * 1978-09-26 1980-01-01 The United States Of America As Represented By The United States Department Of Energy Method for making defect-free zone by laser-annealing of doped silicon
NL7904580A (nl) * 1979-06-12 1980-12-16 Philips Nv Inrichting voor het schrijven van patronen in een laag op een substraat met een bundel elektrisch geladen deeltjes.
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
US4340617A (en) * 1980-05-19 1982-07-20 Massachusetts Institute Of Technology Method and apparatus for depositing a material on a surface
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4378255A (en) * 1981-05-06 1983-03-29 University Of Illinois Foundation Method for producing integrated semiconductor light emitter
US4388145A (en) * 1981-10-29 1983-06-14 Xerox Corporation Laser annealing for growth of single crystal semiconductor areas
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
US4578127A (en) * 1982-08-13 1986-03-25 At&T Bell Laboratories Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer
US4542580A (en) * 1983-02-14 1985-09-24 Prime Computer, Inc. Method of fabricating n-type silicon regions and associated contacts
US4585299A (en) * 1983-07-19 1986-04-29 Fairchild Semiconductor Corporation Process for fabricating optical wave-guiding components and components made by the process
US4671830A (en) * 1984-01-03 1987-06-09 Xerox Corporation Method of controlling the modeling of the well energy band profile by interdiffusion
US4505949A (en) * 1984-04-25 1985-03-19 Texas Instruments Incorporated Thin film deposition using plasma-generated source gas
JPS60251631A (ja) * 1984-05-28 1985-12-12 Semiconductor Res Found 不均一不純物密度分布を有する半導体装置の製造方法
US4543270A (en) * 1984-06-20 1985-09-24 Gould Inc. Method for depositing a micron-size metallic film on a transparent substrate utilizing a visible laser
US4731789A (en) * 1985-05-13 1988-03-15 Xerox Corporation Clad superlattice semiconductor laser
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Also Published As

Publication number Publication date
EP0269359B1 (de) 1994-06-15
DE3750076T2 (de) 1995-01-05
EP0269359A2 (de) 1988-06-01
US4771010A (en) 1988-09-13
JP2608567B2 (ja) 1997-05-07
JPS63197396A (ja) 1988-08-16
EP0269359A3 (en) 1989-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee