DE69231390D1 - Anisotropische Ablagerung von Dielektrika - Google Patents

Anisotropische Ablagerung von Dielektrika

Info

Publication number
DE69231390D1
DE69231390D1 DE69231390T DE69231390T DE69231390D1 DE 69231390 D1 DE69231390 D1 DE 69231390D1 DE 69231390 T DE69231390 T DE 69231390T DE 69231390 T DE69231390 T DE 69231390T DE 69231390 D1 DE69231390 D1 DE 69231390D1
Authority
DE
Germany
Prior art keywords
dielectrics
anisotropic deposition
anisotropic
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69231390T
Other languages
English (en)
Inventor
Chen-Hua Douglas Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of DE69231390D1 publication Critical patent/DE69231390D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
DE69231390T 1991-06-10 1992-06-02 Anisotropische Ablagerung von Dielektrika Expired - Lifetime DE69231390D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71237591A 1991-06-10 1991-06-10

Publications (1)

Publication Number Publication Date
DE69231390D1 true DE69231390D1 (de) 2000-10-05

Family

ID=24861849

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231390T Expired - Lifetime DE69231390D1 (de) 1991-06-10 1992-06-02 Anisotropische Ablagerung von Dielektrika

Country Status (4)

Country Link
US (1) US5302555A (de)
EP (1) EP0518544B1 (de)
JP (1) JPH0766186A (de)
DE (1) DE69231390D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5829128A (en) * 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
US5643838A (en) * 1988-03-31 1997-07-01 Lucent Technologies Inc. Low temperature deposition of silicon oxides for device fabrication
DE69433836D1 (de) 1993-12-28 2004-07-15 Applied Materials Inc Verfahren zur plasma-unterstützten chemischen Dampfabscheidung von Silizium-Oxynitridschichten
US5518959A (en) * 1995-08-24 1996-05-21 Taiwan Semiconductor Manufacturing Company Method for selectively depositing silicon oxide spacer layers
US5599740A (en) * 1995-11-16 1997-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Deposit-etch-deposit ozone/teos insulator layer method
US6194038B1 (en) * 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
JP2002514004A (ja) * 1998-05-01 2002-05-14 セシュー ビー デス 化学蒸着によって堆積された酸化物／有機ポリマー多層薄膜
US6316055B1 (en) * 1998-05-01 2001-11-13 Virginia Tech Intellectual Properties, Inc. Near-room temperature thermal chemical vapor deposition of oxide films
US6495208B1 (en) * 1999-09-09 2002-12-17 Virginia Tech Intellectual Properties, Inc. Near-room temperature CVD synthesis of organic polymer/oxide dielectric nanocomposites
US6891266B2 (en) * 2002-02-14 2005-05-10 Mia-Com RF transition for an area array package
US6911695B2 (en) * 2002-09-19 2005-06-28 Intel Corporation Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain
US6863731B2 (en) * 2002-10-18 2005-03-08 Controls Corporation Of America System for deposition of inert barrier coating to increase corrosion resistance
JP2011522381A (ja) * 2008-05-30 2011-07-28 コロラド ステート ユニバーシティ リサーチ ファンデーション プラズマに基づく化学源装置およびその使用方法
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
JP5807084B2 (ja) * 2013-09-30 2015-11-10 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54135574A (en) * 1978-03-23 1979-10-20 Japan Synthetic Rubber Co Ltd Probe for measuring characteristics of plasma* and method and device employing said probe
JPS5648139A (en) * 1979-09-28 1981-05-01 Hitachi Ltd Formation of plasma psg film
JPS57192032A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Forming method for insulating film
JPS5821324A (ja) * 1981-07-30 1983-02-08 Agency Of Ind Science & Technol 水素添加した半導体薄膜成長用金属表面基板の前処理方法
JPS58181865A (ja) * 1982-04-20 1983-10-24 Citizen Watch Co Ltd プラズマｃｖｄ装置
US4492736A (en) * 1983-09-29 1985-01-08 Atlantic Richfield Company Process for forming microcrystalline silicon material and product
CA1240215A (en) * 1984-07-11 1988-08-09 Edwin A. Chandross Fabrication of devices with a silicon oxide region
US4708884A (en) * 1984-07-11 1987-11-24 American Telephone And Telegraph Company, At&T Bell Laboratories Low temperature deposition of silicon oxides for device fabrication
US4702936A (en) * 1984-09-20 1987-10-27 Applied Materials Japan, Inc. Gas-phase growth process
JPH0697660B2 (ja) * 1985-03-23 1994-11-30 日本電信電話株式会社 薄膜形成方法
US4845054A (en) * 1985-06-14 1989-07-04 Focus Semiconductor Systems, Inc. Low temperature chemical vapor deposition of silicon dioxide films
JPS632330A (ja) * 1986-06-23 1988-01-07 Fujitsu Ltd 化学気相成長方法
JP2763100B2 (ja) * 1988-02-03 1998-06-11 株式会社東芝 薄膜形成方法
JP2683692B2 (ja) * 1988-05-24 1997-12-03 株式会社 半導体エネルギー研究所 プラズマ気相反応方法
US4894352A (en) * 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
JPH02187024A (ja) * 1989-01-13 1990-07-23 Mitsubishi Electric Corp 半導体装置の製造方法および該半導体装置の製造に用いられる処理装置
JPH06103691B2 (ja) * 1989-02-20 1994-12-14 松下電器産業株式会社 薄膜の形成方法
US5013691A (en) * 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
JPH03175632A (ja) * 1989-12-04 1991-07-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0740569B2 (ja) * 1990-02-27 1995-05-01 エイ・ティ・アンド・ティ・コーポレーション Ｅｃｒプラズマ堆積方法

Also Published As

Publication number Publication date
JPH0766186A (ja) 1995-03-10
EP0518544A3 (en) 1993-12-08
US5302555A (en) 1994-04-12
EP0518544B1 (de) 2000-08-30
EP0518544A2 (de) 1992-12-16

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