KR940016575A - 산화실리콘 막 형성 방법 - Google Patents

산화실리콘 막 형성 방법 Download PDF

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KR940016575A
KR940016575A KR1019930027163A KR930027163A KR940016575A KR 940016575 A KR940016575 A KR 940016575A KR 1019930027163 A KR1019930027163 A KR 1019930027163A KR 930027163 A KR930027163 A KR 930027163A KR 940016575 A KR940016575 A KR 940016575A
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silicon oxide
substrate
hydrogen silsesquioxane
silsesquioxane resin
solvent
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KR1019930027163A
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KR100275837B1 (ko
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가쯔또시 미네
다까시 나까무라
모또시 사사끼
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이즈까 고지
다우 코닝 토레이 실리콘 캄파니, 리미티드
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    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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    • C03C2217/00—Coatings on glass
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Abstract

기판의 표면상에 유기용제에 불용성이고 크랙과 핀출이 없는 두꺼운 산화 실리콘 막의 형성 방법이 공지되어 있다. 상기 방법은 기판의 표면상에 수소 실세스퀴옥산 수지막을 형성하는 단계와, 불활성 분위기에서 가열함으로써 수소 실세스퀴옥산을 프리세라믹 형태의 산화 실리콘 생성물로 변환하는 단계와, 산소와, 불활성 가스와 함께 혼합된 산소로 구성하는 그룹에서 선택된 분위기에서 가열함으로써 프리세라믹 형태의 산화 실리콘 생성물을 실리콘 산화 세라믹으로 변환하는 단계를 포함한다.

Description

산화실리콘 막 형성 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (7)

  1. 기판의 표면상에 수소 실세스퀴옥산 수지막을 형성하는 단계와, 불활성 가스 분위기에서 수지막이 형성된 기판을 가열함으로써 수소 실세스퀴옥산 수지막을 프리세라믹 형태의 산화 실리콘 생성물로 변환하는 단계와, 산화 실리콘 생성물내의 실리콘 결합 수소 원자의 함유량이 수소 실세스퀴옥산 수지내의 실리콘 결합 수소 원자의 함유량의 80% 이하에 도달할때까지 불활성 가스와 함께 혼합된 산소와, 산소로부터 선택된 분위기에서 프리세라믹 형태의 산화 실리콘막이 형성된 기판을 가열함으로써 프리세라믹 형태의 산화 실리콘을 세라믹 형태의 산화 실리콘으로 변환시키는 단계를 포함하는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  2. 제 1 항에 있어서, 불활성 가스하에서 상기 수소 실세스퀴옥산수지를 프리세락믹 형태의 산화 실리콘 생성물로 변환시키는 가열 온도로 250℃ 내지 500℃ 범위인 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  3. 제 1 항에 있어서, 상기 프리세라믹 형태의 산화 실리콘 생성물을 세라믹 형태의 산화 실리콘으로 변환시키는 가열온도는 250°내지 500℃ 범위인 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  4. 제 1 항에 있어서, 상기 수소 실세스퀴옥산 수지막은, 수소 실세스퀴옥산 수지의 유기 용제 용액을 제공하고, 상기 용액은 스핀-코팅, 스프레잉과 함침중 선택된 방법으로 적용하여, 용제를 제거함으로써 형성되는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  5. 제 4 항에 있어서, 상기 유기 용제는 향료 용제, 지방성 용제, 케톤 용제, 에스테르 용제와 실리콘 용제로부터 선택되는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  6. 제 1 항에 있어서, 상기 기판은 유리 기판, 세라믹 기판, 금속 기판과 반도체 장치로 부터 선택되는 것을 특징으로 하는 산화 실리콘 막 형성 방법.
  7. 제 1 항에 있어서, 상기 불활성 가스는 니트로겐, 아르곤, 헬륨과 네온중에서 선택된 것을 특징으로 하는 산화 실리콘 막 형성 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930027163A 1992-12-14 1993-12-10 산화 실리콘막 형성방법 KR100275837B1 (ko)

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JP92-353644 1992-12-14
JP35364492A JP3210457B2 (ja) 1992-12-14 1992-12-14 酸化ケイ素膜の形成方法

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KR940016575A true KR940016575A (ko) 1994-07-23
KR100275837B1 KR100275837B1 (ko) 2000-12-15

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US (1) US5372842A (ko)
EP (1) EP0606588B1 (ko)
JP (1) JP3210457B2 (ko)
KR (1) KR100275837B1 (ko)
DE (1) DE69305318T2 (ko)
TW (1) TW238325B (ko)

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JPH06181204A (ja) 1994-06-28
EP0606588B1 (en) 1996-10-09
US5372842A (en) 1994-12-13
TW238325B (ko) 1995-01-11
DE69305318T2 (de) 1997-04-30
JP3210457B2 (ja) 2001-09-17
DE69305318D1 (de) 1996-11-14
EP0606588A1 (en) 1994-07-20
KR100275837B1 (ko) 2000-12-15

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