KR940019814A - 실라잔 중합체로부터 유도된 실리카 피복물을 전자기판 위에 부착시키는 방법 - Google Patents

실라잔 중합체로부터 유도된 실리카 피복물을 전자기판 위에 부착시키는 방법 Download PDF

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KR940019814A
KR940019814A KR1019940002069A KR19940002069A KR940019814A KR 940019814 A KR940019814 A KR 940019814A KR 1019940002069 A KR1019940002069 A KR 1019940002069A KR 19940002069 A KR19940002069 A KR 19940002069A KR 940019814 A KR940019814 A KR 940019814A
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silazane
solvent
silazane polymer
coating
silica coating
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하워드 배니 로날드
챤드라 그리쉬
앤드류 할루스카 로렌
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노만 에드워드 루이스
다우 코닝 코포레이션
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    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
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    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
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    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2518/00—Other type of polymers
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Abstract

본 발명은 실라잔 중합체를 전자 기판 위에 적용시키고 산화 환경에서 가열시킴으로써 당해 중합체를 실리카 피복물로 전환시킴을 포함하여, 실리카 피복물을 전자 기판 위에 형성시키는 방법에 관한 것이다. 생성된 두꺼운 평면화 피복물은 보호성 피복물 및 유전성 내부층으로서 유용하다.

Description

실라잔 중합체로부터 유도된 실리카 피복물을 전자기판 위에 부착시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (8)

  1. 실라잔 중합체를 함유하는 피복물을 전자 기판 위에 적용시키고, 피복된 기판을 산화 대기중에서 실라잔 중합체를 실리카 피복물로 전환시키기에 충분한 온도로 가열시킴을 포함하여, 실리카 피복물을 전자 기판 위에 부착시키는 방법.
  2. 제1항에 있어서, 피복물이, 실라잔 중합체를 용매에 용해시켜 용액을 형성하고, 기판을 당해 용액으로 피복시킨 다음, 용매를 증발시킴을 포함하는 방법에 의해 형성되는 방법.
  3. 제2항에 있어서, 용매가 방향족 탄화수소, 알칸, 케논, 에스테르, 글리콜 에테르 및 사이클릭 디메틸 폴리 실록산으로 이루어진 그룹으로부터 선택되고, 당해 용매가, 실라잔 0.1 내지 50중량% 용액으로 될 때까지 용해시키기에 충분한 양으로 존재하는 방법.
  4. 제1항에 있어서, 산화대기가 공기, 산소, 오존, 수증기, 산소 플라즈마, 암모니아, 아민 및 이들의 혼합물로 이루어진 그룹으로부터 선택되는 방법.
  5. 제1항에 있어서, 피복된 기판이 6시간 미만 동안 50내지 800℃의 온도로 가열되는 방법.
  6. 제1항에 있어서, 실라잔 중합체의 반복 단위에 탄소가 없는 방법.
  7. 제1항에 있어서, 실라잔이 [R2SiNH], [RSi(NH)2.5] 및/또는[R3Si(NH)1/2]구조의 단위 [여기서, R은 각각 독립적으로 수소, 탄소수 1 내지 20의 알킬 라디칼, 아릴 라디칼 및 알케닐 라디칼로 이루어진 그룹으로부터 선택된다]를 함유하는 방법.
  8. 제1항에 있어서, 실라잔이 하이드리도폴리실라잔을 포함하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940002069A 1993-02-05 1994-02-04 실라잔중합체로부터유도된실리카피막을전자기판에부착시키는방법 KR100313382B1 (ko)

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US1387393A 1993-02-05 1993-02-05
US08/013,873 1993-02-05

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KR940019814A true KR940019814A (ko) 1994-09-15
KR100313382B1 KR100313382B1 (ko) 2001-12-28

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US (1) US5358739A (ko)
EP (1) EP0611067B1 (ko)
JP (1) JPH072511A (ko)
KR (1) KR100313382B1 (ko)
DE (1) DE69416881T2 (ko)
TW (1) TW270902B (ko)

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US5358739A (en) 1994-10-25
JPH072511A (ja) 1995-01-06
EP0611067A2 (en) 1994-08-17
TW270902B (ko) 1996-02-21
EP0611067B1 (en) 1999-03-10
DE69416881D1 (de) 1999-04-15
EP0611067A3 (en) 1995-01-25
KR100313382B1 (ko) 2001-12-28

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