KR920000663A - 실리카 피막을 형성시키기 위한 급속 열처리법 - Google Patents

실리카 피막을 형성시키기 위한 급속 열처리법 Download PDF

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KR920000663A
KR920000663A KR1019910009913A KR910009913A KR920000663A KR 920000663 A KR920000663 A KR 920000663A KR 1019910009913 A KR1019910009913 A KR 1019910009913A KR 910009913 A KR910009913 A KR 910009913A KR 920000663 A KR920000663 A KR 920000663A
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substrate
hydrogen silsesquioxane
silsesquioxane resin
group
coated
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KR1019910009913A
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찬드라 그리쉬
아일린 젠틀 테레사
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노만 에드워드 루이스
다우 코닝 코포레이션
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Publication of KR920000663A publication Critical patent/KR920000663A/ko

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Abstract

내용 없음

Description

실리카 피막을 형성시키기 위한 급속 열처리법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (4)

  1. 수소 실세스퀴옥산 수지 및 용매를 포함하는 용액으로 기판을 피복하고, 용매를 증발시켜 기판 상에 수소 실세스퀴옥산 수지를 부착시킨 다음, 피복된 기판을 가시광 영역, 적외선 영역, 자외선 영역 및 이들의 혼합 영역으로 이루어지는 그룹 중에서 선택된 스펙트럼 영역의 비간섭 광을 포함하는 고강도 방사선에 노출시켜 피복된 기판을 충분히 가열시킴으로써 수소 실세스퀴옥산 수지 피막이 실리카 피막으로 전환되는 것을 촉진시킴을 특징으로 하여 실리카 피막을 기판에 도포하는 방법.
  2. 제1항에 있어서, 피복된 기판을 가열하는 동안 열적으로 고립시키고 고강도 방사선으로 피복된 기판을 약1초내지 약 1시간 동안 약 50내지 약 1000℃의 온도에서 가열함을 특징으로 하는 방법.
  3. 제2항에 있어서, 수소 실세스퀴옥산 수지를(HSiO3/2)n, 일반식 HSi(OH)aO3-0/2의 단위를 갖는 중합체 및 일반식 HSi(OH)x(OR)yOz/2의 단위를 갖는 중합체(여기서, R은 각각 독립적으로, 산소 원자를 통해 실리콘에 결합시 가수분해성 치환체를 형성하는 유기 그룹이며, a는 0내지 2이고, x는 0내지 2이며, y는 0내지 2이고, z는 1내지3이며, x,y및 z는 합은 3이고, n은 3을 초과하는 정수이며 중합체 단위 전체에 걸쳐 y의 평균치는 0을 초과한다)로 이루어지는 그룹중에서 선택하고 용매는 알콜, 방향족 탄화수소, 알칸, 사이클딕 디메딜실록산,케톤,테르또는 글리콜 테르로 이루어지는 그룹중에서 선택하며 수소 실세스퀴옥산 수지를 약 0.1내지 약 50중량%가 되게 용해시키기에 충분한 양으로 존재함을 특징으로 하는 방법.
  4. 제3항에 있어서, 용액이, 티탄, 지르코늄, 알루미늄, 탄탈, 바나듐, 니오브, 붕소 및 인으로 이루어지는 그룹 중에서 선택된 원소를 함유하고, 알콕시 또는 아실옥시로 이루어지는 그룹중에서 선택된 가수분해성 치환체 하나 이상을 함유하며 실리카 피막이 개질 세라믹 산화물 0.1내지 30중량%를 함유하도록 하는 양으로 존재하는 화합물을 포함하는 개질 산화물 선구물질을 추가로 함유하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910009913A 1990-06-18 1991-06-15 실리카 피막을 형성시키기 위한 급속 열처리법 KR920000663A (ko)

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US07/539.249 1990-06-18
US07/539,249 US5059448A (en) 1990-06-18 1990-06-18 Rapid thermal process for obtaining silica coatings

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KR920000663A true KR920000663A (ko) 1992-01-29

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KR1019910009913A KR950001671B1 (ko) 1990-06-18 1991-06-13 실리카 피막을 형성시키기 위한 급속 열처리법
KR1019910009913A KR920000663A (ko) 1990-06-18 1991-06-15 실리카 피막을 형성시키기 위한 급속 열처리법

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US (1) US5059448A (ko)
EP (1) EP0462715B1 (ko)
JP (1) JP2561979B2 (ko)
KR (2) KR950001671B1 (ko)
CA (1) CA2043411A1 (ko)
DE (1) DE69117353T2 (ko)
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US5116637A (en) * 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
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US5059448A (en) 1991-10-22
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CA2043411A1 (en) 1991-12-19
DE69117353D1 (de) 1996-04-04
KR930000800A (ko) 1993-01-15
EP0462715A1 (en) 1991-12-27
KR950001671B1 (ko) 1995-02-28
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DE69117353T2 (de) 1996-09-05
ES2086485T3 (es) 1996-07-01

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