ES2086485T3 - Proceso termico rapido para obtener revestimientos de silice. - Google Patents
Proceso termico rapido para obtener revestimientos de silice.Info
- Publication number
- ES2086485T3 ES2086485T3 ES91304930T ES91304930T ES2086485T3 ES 2086485 T3 ES2086485 T3 ES 2086485T3 ES 91304930 T ES91304930 T ES 91304930T ES 91304930 T ES91304930 T ES 91304930T ES 2086485 T3 ES2086485 T3 ES 2086485T3
- Authority
- ES
- Spain
- Prior art keywords
- coatings
- thermal process
- silic
- quick thermal
- quick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Surface Treatment Of Glass (AREA)
- Chemically Coating (AREA)
- Consolidation Of Soil By Introduction Of Solidifying Substances Into Soil (AREA)
Abstract
ESTA INVENCION ESTA BASADA EN EL DESCUBRIMIENTO DE QUE UN PROCESO TERMICO RAPIDO (RTP) PUEDE CONVERTIR REVESTIMIENTOS DE RESINA SILSESQUIOXANA DE HIDROGENO EN REVESTIMIENTOS DE SILICE CERAMICOS. ESTA TECNICA ES ESPECIALMENTE VALIDA PARA LA APLICACION DE CAPAS DIELECTRICAS Y PROTECTORAS EN DISPOSITIVOS ELECTRONICOS.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/539,249 US5059448A (en) | 1990-06-18 | 1990-06-18 | Rapid thermal process for obtaining silica coatings |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2086485T3 true ES2086485T3 (es) | 1996-07-01 |
Family
ID=24150433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES91304930T Expired - Lifetime ES2086485T3 (es) | 1990-06-18 | 1991-05-31 | Proceso termico rapido para obtener revestimientos de silice. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5059448A (es) |
| EP (1) | EP0462715B1 (es) |
| JP (1) | JP2561979B2 (es) |
| KR (2) | KR950001671B1 (es) |
| CA (1) | CA2043411A1 (es) |
| DE (1) | DE69117353T2 (es) |
| ES (1) | ES2086485T3 (es) |
Families Citing this family (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5116637A (en) * | 1990-06-04 | 1992-05-26 | Dow Corning Corporation | Amine catalysts for the low temperature conversion of silica precursors to silica |
| US5290399A (en) * | 1991-02-05 | 1994-03-01 | Advanced Micro Devices, Inc. | Surface planarizing methods for integrated circuit devices |
| US5445894A (en) * | 1991-04-22 | 1995-08-29 | Dow Corning Corporation | Ceramic coatings |
| US5339211A (en) * | 1991-05-02 | 1994-08-16 | Dow Corning Corporation | Variable capacitor |
| US5436029A (en) * | 1992-07-13 | 1995-07-25 | Dow Corning Corporation | Curing silicon hydride containing materials by exposure to nitrous oxide |
| JP3210457B2 (ja) * | 1992-12-14 | 2001-09-17 | ダウ・コ−ニング・コ−ポレ−ション | 酸化ケイ素膜の形成方法 |
| US5258334A (en) * | 1993-01-15 | 1993-11-02 | The U.S. Government As Represented By The Director, National Security Agency | Process of preventing visual access to a semiconductor device by applying an opaque ceramic coating to integrated circuit devices |
| US5387480A (en) * | 1993-03-08 | 1995-02-07 | Dow Corning Corporation | High dielectric constant coatings |
| JP3418458B2 (ja) * | 1993-08-31 | 2003-06-23 | 富士通株式会社 | 半導体装置の製造方法 |
| JP2739902B2 (ja) * | 1993-09-30 | 1998-04-15 | 東京応化工業株式会社 | 酸化ケイ素系被膜形成用塗布液 |
| EP0686680A4 (en) * | 1993-12-27 | 1996-07-24 | Kawasaki Steel Co | INSULATING FILM FOR SEMICONDUCTOR DEVICES, COATING FLUID USED TO FORM THE FILM, AND PROCESS FOR PRODUCING SAID FILM |
| KR950034495A (ko) * | 1994-04-20 | 1995-12-28 | 윌리엄 이.힐러 | 반도체 장치 제조를 위한 고 수율 광 경화 공정 |
| US5456952A (en) * | 1994-05-17 | 1995-10-10 | Lsi Logic Corporation | Process of curing hydrogen silsesquioxane coating to form silicon oxide layer |
| DE69502709T2 (de) * | 1994-10-18 | 1998-12-24 | Philips Electronics N.V., Eindhoven | Verfahren und herstellung einer dünnen silizium-oxid-schicht |
| US5530293A (en) | 1994-11-28 | 1996-06-25 | International Business Machines Corporation | Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits |
| US5508238A (en) * | 1995-05-11 | 1996-04-16 | Dow Corning Corporation | Monolithic ceramic bodies using modified hydrogen silsesquioxane resin |
| JP3070450B2 (ja) * | 1995-07-14 | 2000-07-31 | ヤマハ株式会社 | 多層配線形成法 |
| JP3149739B2 (ja) * | 1995-07-14 | 2001-03-26 | ヤマハ株式会社 | 多層配線形成法 |
| JP3696939B2 (ja) * | 1995-08-11 | 2005-09-21 | 東京応化工業株式会社 | シリカ系被膜の形成方法 |
| EP0764704B1 (en) * | 1995-09-25 | 2000-03-08 | Dow Corning Corporation | Use of preceramic polymers as electronic adhesives |
| US5609925A (en) * | 1995-12-04 | 1997-03-11 | Dow Corning Corporation | Curing hydrogen silsesquioxane resin with an electron beam |
| JPH09237785A (ja) * | 1995-12-28 | 1997-09-09 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP3123449B2 (ja) * | 1996-11-01 | 2001-01-09 | ヤマハ株式会社 | 多層配線形成法 |
| JP3082688B2 (ja) * | 1996-11-05 | 2000-08-28 | ヤマハ株式会社 | 配線形成法 |
| JP3225872B2 (ja) | 1996-12-24 | 2001-11-05 | ヤマハ株式会社 | 酸化シリコン膜形成法 |
| JPH10247686A (ja) * | 1996-12-30 | 1998-09-14 | Yamaha Corp | 多層配線形成法 |
| US6239441B1 (en) * | 1997-01-20 | 2001-05-29 | Kabushiki Kaisha Toshiba | Apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device |
| EP0860462A3 (en) * | 1997-02-24 | 1999-04-21 | Dow Corning Toray Silicone Company Limited | Composition and method for the formation of silica thin films |
| US6143855A (en) * | 1997-04-21 | 2000-11-07 | Alliedsignal Inc. | Organohydridosiloxane resins with high organic content |
| US6743856B1 (en) | 1997-04-21 | 2004-06-01 | Honeywell International Inc. | Synthesis of siloxane resins |
| US6218497B1 (en) | 1997-04-21 | 2001-04-17 | Alliedsignal Inc. | Organohydridosiloxane resins with low organic content |
| US6015457A (en) * | 1997-04-21 | 2000-01-18 | Alliedsignal Inc. | Stable inorganic polymers |
| JP3909912B2 (ja) * | 1997-05-09 | 2007-04-25 | 東京応化工業株式会社 | シリカ系厚膜被膜形成方法 |
| EP0881668A3 (en) | 1997-05-28 | 2000-11-15 | Dow Corning Toray Silicone Company, Ltd. | Deposition of an electrically insulating thin film with a low dielectric constant |
| US5866197A (en) * | 1997-06-06 | 1999-02-02 | Dow Corning Corporation | Method for producing thick crack-free coating from hydrogen silsequioxane resin |
| US6030904A (en) * | 1997-08-21 | 2000-02-29 | International Business Machines Corporation | Stabilization of low-k carbon-based dielectrics |
| US5935650A (en) * | 1997-10-17 | 1999-08-10 | Lerch; Wilfried | Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system |
| TW439197B (en) * | 1997-10-31 | 2001-06-07 | Dow Corning | Electronic coating having low dielectric constant |
| US6018002A (en) * | 1998-02-06 | 2000-01-25 | Dow Corning Corporation | Photoluminescent material from hydrogen silsesquioxane resin |
| US6218020B1 (en) | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
| US6177199B1 (en) | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
| US6417115B1 (en) * | 1998-05-26 | 2002-07-09 | Axeclis Technologies, Inc. | Treatment of dielectric materials |
| US5935638A (en) * | 1998-08-06 | 1999-08-10 | Dow Corning Corporation | Silicon dioxide containing coating |
| US6124164A (en) | 1998-09-17 | 2000-09-26 | Micron Technology, Inc. | Method of making integrated capacitor incorporating high K dielectric |
| WO2000077575A1 (en) * | 1999-06-10 | 2000-12-21 | Alliedsignal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
| US20060263531A1 (en) * | 2003-12-18 | 2006-11-23 | Lichtenhan Joseph D | Polyhedral oligomeric silsesquioxanes as glass forming coatings |
| US6358841B1 (en) | 1999-08-23 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | Method of copper CMP on low dielectric constant HSQ material |
| US6440550B1 (en) * | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
| US6472076B1 (en) | 1999-10-18 | 2002-10-29 | Honeywell International Inc. | Deposition of organosilsesquioxane films |
| US6368400B1 (en) * | 2000-07-17 | 2002-04-09 | Honeywell International | Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography |
| US20030054115A1 (en) * | 2001-09-14 | 2003-03-20 | Ralph Albano | Ultraviolet curing process for porous low-K materials |
| US6705457B2 (en) * | 2002-04-01 | 2004-03-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Transport device and method of transporting to-be-processed elements through a high-temperature zone |
| US6889410B2 (en) * | 2003-01-31 | 2005-05-10 | Indian Institute Of Science | Rapid coating process and its application to lead-acid batteries |
| US7622399B2 (en) * | 2003-09-23 | 2009-11-24 | Silecs Oy | Method of forming low-k dielectrics using a rapid curing process |
| US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| SG149034A1 (en) * | 2003-12-18 | 2009-01-29 | Hybrid Plastics Inc | Polyhedral oligomeric silsesquioxanes and metallized polyhedral oligomeric silsesquioxanes as coatings, composites and additives |
| JP5309316B2 (ja) * | 2006-02-06 | 2013-10-09 | 国立大学法人東北大学 | チップ素子 |
| US7776404B2 (en) * | 2006-11-30 | 2010-08-17 | General Electric Company | Methods for forming thermal oxidative barrier coatings on organic matrix composite substrates |
| US8642246B2 (en) | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
| JP4954758B2 (ja) * | 2007-03-19 | 2012-06-20 | 新日本製鐵株式会社 | 耐食性および塗料密着性に優れためっき鋼板の製造方法 |
| JP2009078191A (ja) * | 2007-09-25 | 2009-04-16 | Ibaraki Prefecture | 基材温度上昇の少ない加熱コーティング方法 |
| US8163357B2 (en) * | 2009-03-26 | 2012-04-24 | Signet Armorlite, Inc. | Scratch-resistant coatings with improved adhesion to inorganic thin film coatings |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| US8457540B2 (en) | 2009-09-15 | 2013-06-04 | Ricoh Company, Ltd. | Fixing device and image forming apparatus incorporating same |
| KR101303220B1 (ko) * | 2010-03-16 | 2013-09-03 | 김진욱 | 활선 상태에서 교체 가능한 탈착용 안전 차단기 |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| GB201209695D0 (en) * | 2012-05-31 | 2012-07-18 | Dow Corning | Silicon wafer coated with passivation layer |
| US9741918B2 (en) | 2013-10-07 | 2017-08-22 | Hypres, Inc. | Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
| KR102550414B1 (ko) * | 2016-11-03 | 2023-07-04 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4822697A (en) * | 1986-12-03 | 1989-04-18 | Dow Corning Corporation | Platinum and rhodium catalysis of low temperature formation multilayer ceramics |
| US4911992A (en) * | 1986-12-04 | 1990-03-27 | Dow Corning Corporation | Platinum or rhodium catalyzed multilayer ceramic coatings from hydrogen silsesquioxane resin and metal oxides |
| US4753855A (en) * | 1986-12-04 | 1988-06-28 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides for protection of electronic devices |
| JP2624254B2 (ja) * | 1987-05-22 | 1997-06-25 | 東京応化工業株式会社 | シリカ系被膜の膜質改善方法 |
| US4847162A (en) * | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
| US4849296A (en) * | 1987-12-28 | 1989-07-18 | Dow Corning Corporation | Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia |
| US4885186A (en) * | 1988-12-29 | 1989-12-05 | Bell Communications Research, Inc. | Method for preparation of silicate glasses of controlled index of refraction |
| US4911942A (en) * | 1989-01-13 | 1990-03-27 | Asama Chemical Co., Ltd. | Stabilized oil and fat powder |
| CA2010335A1 (en) * | 1989-03-09 | 1990-09-09 | Ronald H. Baney | Method for protective coating superconductors |
| US4973526A (en) * | 1990-02-15 | 1990-11-27 | Dow Corning Corporation | Method of forming ceramic coatings and resulting articles |
-
1990
- 1990-06-18 US US07/539,249 patent/US5059448A/en not_active Expired - Fee Related
-
1991
- 1991-05-28 CA CA002043411A patent/CA2043411A1/en not_active Abandoned
- 1991-05-31 EP EP91304930A patent/EP0462715B1/en not_active Expired - Lifetime
- 1991-05-31 DE DE69117353T patent/DE69117353T2/de not_active Expired - Fee Related
- 1991-05-31 ES ES91304930T patent/ES2086485T3/es not_active Expired - Lifetime
- 1991-06-13 KR KR1019910009913A patent/KR950001671B1/ko not_active Expired - Fee Related
- 1991-06-15 KR KR1019910009913A patent/KR920000663A/ko active Granted
- 1991-06-17 JP JP3144617A patent/JP2561979B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2561979B2 (ja) | 1996-12-11 |
| KR920000663A (ko) | 1992-01-29 |
| KR950001671B1 (ko) | 1995-02-28 |
| EP0462715A1 (en) | 1991-12-27 |
| DE69117353D1 (de) | 1996-04-04 |
| JPH04298542A (ja) | 1992-10-22 |
| US5059448A (en) | 1991-10-22 |
| DE69117353T2 (de) | 1996-09-05 |
| EP0462715B1 (en) | 1996-02-28 |
| KR930000800A (ko) | 1993-01-15 |
| CA2043411A1 (en) | 1991-12-19 |
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