MX9303079A - Composicion de capa protectora positiva. - Google Patents

Composicion de capa protectora positiva.

Info

Publication number
MX9303079A
MX9303079A MX9303079A MX9303079A MX9303079A MX 9303079 A MX9303079 A MX 9303079A MX 9303079 A MX9303079 A MX 9303079A MX 9303079 A MX9303079 A MX 9303079A MX 9303079 A MX9303079 A MX 9303079A
Authority
MX
Mexico
Prior art keywords
protective layer
positive protective
composition
layer composition
positive
Prior art date
Application number
MX9303079A
Other languages
English (en)
Inventor
Hiroshi Moriuma
Kyoko Nagase
Haruyoshi Osaki
Kazuhiko Hashimoto
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of MX9303079A publication Critical patent/MX9303079A/es

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0381—Macromolecular compounds which are rendered insoluble or differentially wettable using a combination of a phenolic resin and a polyoxyethylene resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Se describe una composición de capa protectora positiva que comprende un compuesto de quinonadiazina y una resina soluble en álcali que contiene resina (A) obtenible por medio de una reacción de condensación de por lo menos un compuesto representado por la fórmula general (I). Esta composición de capa protectora positiva es excelente en propiedades tales como perfil, resolución, resistencia al calor, ect., y casi completamente libre de escoria.
MX9303079A 1992-05-27 1993-05-26 Composicion de capa protectora positiva. MX9303079A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4134862A JPH05323604A (ja) 1992-05-27 1992-05-27 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
MX9303079A true MX9303079A (es) 1994-02-28

Family

ID=15138214

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9303079A MX9303079A (es) 1992-05-27 1993-05-26 Composicion de capa protectora positiva.

Country Status (8)

Country Link
US (1) US5429904A (es)
EP (1) EP0571988B1 (es)
JP (1) JPH05323604A (es)
KR (1) KR930024120A (es)
CA (1) CA2096213A1 (es)
DE (1) DE69301273T2 (es)
MX (1) MX9303079A (es)
TW (1) TW270181B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0706090B1 (en) * 1994-10-05 2001-01-03 JSR Corporation Radiation sensitive resin composition
JP3444562B2 (ja) * 1995-03-28 2003-09-08 東京応化工業株式会社 レジスト溶液の調製方法
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound
JP3057010B2 (ja) * 1996-08-29 2000-06-26 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
JP3666839B2 (ja) * 1998-01-23 2005-06-29 東京応化工業株式会社 ポジ型ホトレジスト組成物およびその製造方法
US6201094B1 (en) 1998-09-22 2001-03-13 Borden Chemical, Inc. Phenol-novolacs with improved optical properties
US6239248B1 (en) * 1998-09-22 2001-05-29 Borden Chemical, Inc. Phenol-novolacs with improved optical properties
US6001950A (en) * 1998-09-22 1999-12-14 Borden Chemical, Inc. Phenol-novolacs with improved optical properties
MY121469A (en) * 1999-02-16 2006-01-28 Shell Int Research Process for producing phenol-dicarbonyl condensates with increased fluorescence, epoxy resins, epoxy resin systems and laminates made with the same
US6379800B1 (en) 2000-06-05 2002-04-30 Borden Chemical, Inc. Glyoxal-phenolic condensates with enhanced fluorescence
ATE354595T1 (de) * 2000-06-05 2007-03-15 Hexion Specialty Chemicals Inc Glyoxal-phenol-kondensate mit gesteigerter fluoreszenz
JP4429546B2 (ja) * 2001-05-09 2010-03-10 東京応化工業株式会社 ノボラック樹脂の製造方法、およびこれを用いたポジ型ホトレジスト組成物
CN1802603A (zh) 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
JP5535869B2 (ja) * 2010-10-21 2014-07-02 明和化成株式会社 ノボラック型フェノール樹脂およびこれを含むフォトレジスト組成物
JP7176844B2 (ja) * 2015-10-19 2022-11-22 日産化学株式会社 長鎖アルキル基含有ノボラックを含むレジスト下層膜形成組成物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238774A (en) * 1985-08-07 1993-08-24 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent
JPH0654384B2 (ja) * 1985-08-09 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP2577908B2 (ja) * 1987-04-20 1997-02-05 日本ゼオン株式会社 ポジ型フオトレジスト組成物
DE68928823T2 (de) * 1988-07-07 1999-02-25 Sumitomo Chemical Co., Ltd., Osaka Strahlungsempfindliche, positiv arbeitende Resistzusammensetzung
US5238773A (en) * 1988-10-28 1993-08-24 International Business Machines Corporation Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
CA2024312A1 (en) * 1989-09-05 1991-03-06 Haruyoshi Osaki Radiation-sensitive positive resist composition
JP2814721B2 (ja) * 1989-09-05 1998-10-27 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
US5215856A (en) * 1989-09-19 1993-06-01 Ocg Microelectronic Materials, Inc. Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements
JPH087435B2 (ja) * 1989-12-28 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
CA2041434A1 (en) * 1990-05-02 1991-11-03 Teijiro Kitao Resist composition
JPH0450851A (ja) * 1990-06-14 1992-02-19 Sumitomo Chem Co Ltd ポジ型感放射線性レジスト組成物
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物

Also Published As

Publication number Publication date
US5429904A (en) 1995-07-04
EP0571988A2 (en) 1993-12-01
DE69301273D1 (de) 1996-02-22
JPH05323604A (ja) 1993-12-07
EP0571988A3 (en) 1994-11-09
TW270181B (es) 1996-02-11
EP0571988B1 (en) 1996-01-10
CA2096213A1 (en) 1993-11-28
DE69301273T2 (de) 1996-08-08
KR930024120A (ko) 1993-12-22

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Legal Events

Date Code Title Description
FG Grant or registration
MM Annulment or lapse due to non-payment of fees