DE69301273T2 - Positiv arbeitende Photolackzusammensetzung - Google Patents

Positiv arbeitende Photolackzusammensetzung

Info

Publication number
DE69301273T2
DE69301273T2 DE69301273T DE69301273T DE69301273T2 DE 69301273 T2 DE69301273 T2 DE 69301273T2 DE 69301273 T DE69301273 T DE 69301273T DE 69301273 T DE69301273 T DE 69301273T DE 69301273 T2 DE69301273 T2 DE 69301273T2
Authority
DE
Germany
Prior art keywords
photoresist composition
positive working
working photoresist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69301273T
Other languages
English (en)
Other versions
DE69301273D1 (de
Inventor
Kyoko Nagase
Haruyoshi Osaki
Kazuhiko Hashimoto
Hiroshi Moriuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of DE69301273D1 publication Critical patent/DE69301273D1/de
Application granted granted Critical
Publication of DE69301273T2 publication Critical patent/DE69301273T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE69301273T 1992-05-27 1993-05-26 Positiv arbeitende Photolackzusammensetzung Expired - Fee Related DE69301273T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4134862A JPH05323604A (ja) 1992-05-27 1992-05-27 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
DE69301273D1 DE69301273D1 (de) 1996-02-22
DE69301273T2 true DE69301273T2 (de) 1996-08-08

Family

ID=15138214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69301273T Expired - Fee Related DE69301273T2 (de) 1992-05-27 1993-05-26 Positiv arbeitende Photolackzusammensetzung

Country Status (8)

Country Link
US (1) US5429904A (de)
EP (1) EP0571988B1 (de)
JP (1) JPH05323604A (de)
KR (1) KR930024120A (de)
CA (1) CA2096213A1 (de)
DE (1) DE69301273T2 (de)
MX (1) MX9303079A (de)
TW (1) TW270181B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69519781T2 (de) * 1994-10-05 2001-06-07 Japan Synthetic Rubber Co Ltd Strahlungsempfindliche Harzzusammensetzung
JP3444562B2 (ja) * 1995-03-28 2003-09-08 東京応化工業株式会社 レジスト溶液の調製方法
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound
JP3057010B2 (ja) * 1996-08-29 2000-06-26 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
JP3666839B2 (ja) * 1998-01-23 2005-06-29 東京応化工業株式会社 ポジ型ホトレジスト組成物およびその製造方法
US6201094B1 (en) 1998-09-22 2001-03-13 Borden Chemical, Inc. Phenol-novolacs with improved optical properties
US6001950A (en) * 1998-09-22 1999-12-14 Borden Chemical, Inc. Phenol-novolacs with improved optical properties
US6239248B1 (en) * 1998-09-22 2001-05-29 Borden Chemical, Inc. Phenol-novolacs with improved optical properties
MY121469A (en) 1999-02-16 2006-01-28 Shell Int Research Process for producing phenol-dicarbonyl condensates with increased fluorescence, epoxy resins, epoxy resin systems and laminates made with the same
ATE354595T1 (de) * 2000-06-05 2007-03-15 Hexion Specialty Chemicals Inc Glyoxal-phenol-kondensate mit gesteigerter fluoreszenz
US6379800B1 (en) 2000-06-05 2002-04-30 Borden Chemical, Inc. Glyoxal-phenolic condensates with enhanced fluorescence
JP4429546B2 (ja) * 2001-05-09 2010-03-10 東京応化工業株式会社 ノボラック樹脂の製造方法、およびこれを用いたポジ型ホトレジスト組成物
EP1649322A4 (de) 2003-07-17 2007-09-19 Honeywell Int Inc Planarisierungsfilme für fortschrittliche mikroelektronsiche anwendungen und einrichtungen und herstellungsverfahren dafür
JP5535869B2 (ja) * 2010-10-21 2014-07-02 明和化成株式会社 ノボラック型フェノール樹脂およびこれを含むフォトレジスト組成物
JP7176844B2 (ja) * 2015-10-19 2022-11-22 日産化学株式会社 長鎖アルキル基含有ノボラックを含むレジスト下層膜形成組成物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5238774A (en) * 1985-08-07 1993-08-24 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition containing 1,2-quinonediazide compound, alkali-soluble resin and monooxymonocarboxylic acid ester solvent
JPH0654384B2 (ja) * 1985-08-09 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP2577908B2 (ja) * 1987-04-20 1997-02-05 日本ゼオン株式会社 ポジ型フオトレジスト組成物
CA1337626C (en) * 1988-07-07 1995-11-28 Haruyoshi Osaki Radiation-sensitive positive resist composition
US5238773A (en) * 1988-10-28 1993-08-24 International Business Machines Corporation Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
CA2024312A1 (en) * 1989-09-05 1991-03-06 Haruyoshi Osaki Radiation-sensitive positive resist composition
JP2814721B2 (ja) * 1989-09-05 1998-10-27 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
US5215856A (en) * 1989-09-19 1993-06-01 Ocg Microelectronic Materials, Inc. Tris-(hydroxyphenyl) lower alkane compounds as sensitivity enhancers for o-quinonediazide containing radiation-sensitive compositions and elements
JPH087435B2 (ja) * 1989-12-28 1996-01-29 日本ゼオン株式会社 ポジ型レジスト組成物
CA2041434A1 (en) * 1990-05-02 1991-11-03 Teijiro Kitao Resist composition
JPH0450851A (ja) * 1990-06-14 1992-02-19 Sumitomo Chem Co Ltd ポジ型感放射線性レジスト組成物
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物

Also Published As

Publication number Publication date
EP0571988A3 (de) 1994-11-09
JPH05323604A (ja) 1993-12-07
CA2096213A1 (en) 1993-11-28
KR930024120A (ko) 1993-12-22
TW270181B (de) 1996-02-11
MX9303079A (es) 1994-02-28
EP0571988A2 (de) 1993-12-01
EP0571988B1 (de) 1996-01-10
US5429904A (en) 1995-07-04
DE69301273D1 (de) 1996-02-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee