DE69423800T2 - Positiv arbeitende fotoempfindliche Zusammensetzung - Google Patents

Positiv arbeitende fotoempfindliche Zusammensetzung

Info

Publication number
DE69423800T2
DE69423800T2 DE69423800T DE69423800T DE69423800T2 DE 69423800 T2 DE69423800 T2 DE 69423800T2 DE 69423800 T DE69423800 T DE 69423800T DE 69423800 T DE69423800 T DE 69423800T DE 69423800 T2 DE69423800 T2 DE 69423800T2
Authority
DE
Germany
Prior art keywords
photosensitive composition
positive working
working photosensitive
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69423800T
Other languages
English (en)
Other versions
DE69423800D1 (de
Inventor
Syunichi Kondo
Akira Umehara
Yoshimasa Aotani
Tsuguo Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69423800D1 publication Critical patent/DE69423800D1/de
Publication of DE69423800T2 publication Critical patent/DE69423800T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69423800T 1993-02-05 1994-01-14 Positiv arbeitende fotoempfindliche Zusammensetzung Expired - Fee Related DE69423800T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5018793A JPH06230574A (ja) 1993-02-05 1993-02-05 ポジ型感光性組成物

Publications (2)

Publication Number Publication Date
DE69423800D1 DE69423800D1 (de) 2000-05-11
DE69423800T2 true DE69423800T2 (de) 2000-08-03

Family

ID=11981482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69423800T Expired - Fee Related DE69423800T2 (de) 1993-02-05 1994-01-14 Positiv arbeitende fotoempfindliche Zusammensetzung

Country Status (4)

Country Link
US (1) US5939235A (de)
EP (1) EP0609684B1 (de)
JP (1) JPH06230574A (de)
DE (1) DE69423800T2 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0876380A (ja) 1994-09-06 1996-03-22 Fuji Photo Film Co Ltd ポジ型印刷版組成物
US5658708A (en) * 1995-02-17 1997-08-19 Fuji Photo Film Co., Ltd. Image recording material
JP3198915B2 (ja) * 1996-04-02 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3518158B2 (ja) * 1996-04-02 2004-04-12 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3125678B2 (ja) * 1996-04-08 2001-01-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
KR100566042B1 (ko) * 1997-10-07 2006-05-25 간사이 페인트 가부시키가이샤 포지티브형전착포토레지스트조성물및패턴의제조방법
JP3903638B2 (ja) * 1999-04-12 2007-04-11 株式会社日立製作所 パタン形成方法
US6555286B1 (en) * 1999-08-25 2003-04-29 Kansai Paint Co., Ltd. Positive type actinic-ray-curable dry film and pattern-forming method by use of the same
EP1228108A1 (de) * 1999-11-02 2002-08-07 Canadian Space Agency Photolösungsfähige schichten
DE60128283T2 (de) * 2000-03-22 2008-01-31 Shin-Etsu Chemical Co., Ltd. Chemisch verstärkte positiv arbeitende Resistzusammensetzung und Strukturierungsverfahren
ATE486301T1 (de) 2000-08-21 2010-11-15 Tokyo Ohka Kogyo Co Ltd Vernetzte, positiv arbeitende photoresist- zusammensetzung
JP3948646B2 (ja) 2000-08-31 2007-07-25 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP3890052B2 (ja) * 2001-09-11 2007-03-07 関西ペイント株式会社 活性エネルギー線性組成物及びパターン形成方法
TWI282907B (en) 2003-05-20 2007-06-21 Tokyo Ohka Kogyo Co Ltd Chemical amplification type positive photoresist composition and resist pattern forming method using the same
US7329478B2 (en) 2003-05-22 2008-02-12 Tokyo Ohka Kogyo Co., Ltd. Chemical amplified positive photo resist composition and method for forming resist pattern
JP4131864B2 (ja) 2003-11-25 2008-08-13 東京応化工業株式会社 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法
JP2005173369A (ja) 2003-12-12 2005-06-30 Tokyo Ohka Kogyo Co Ltd レジストパターンの剥離方法
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
JP4630077B2 (ja) 2005-01-27 2011-02-09 日本電信電話株式会社 レジストパターン形成方法
JP4555698B2 (ja) 2005-01-27 2010-10-06 日本電信電話株式会社 レジストパターン形成方法
JP4937594B2 (ja) 2006-02-02 2012-05-23 東京応化工業株式会社 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法
CN101443705B (zh) * 2006-05-16 2012-05-30 日产化学工业株式会社 含有硅氧烷化合物的正型感光性树脂组合物
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US20100291483A1 (en) * 2007-09-20 2010-11-18 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing branched polyhydroxystyrene
US8715918B2 (en) 2007-09-25 2014-05-06 Az Electronic Materials Usa Corp. Thick film resists
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8393158B2 (en) * 2007-10-24 2013-03-12 Gulfstream Aerospace Corporation Low shock strength inlet
KR101647158B1 (ko) * 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
JP4918162B2 (ja) * 2008-02-22 2012-04-18 ブルーワー サイエンス アイ エヌ シー． １９３ｎｍリソグラフィー用の二重層の感光性で現像液に可溶な底面反射防止塗膜
JP5553488B2 (ja) * 2008-06-06 2014-07-16 株式会社ダイセル リソグラフィー用重合体並びにその製造方法
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
JP6119668B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP6135600B2 (ja) 2013-06-11 2017-05-31 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP6119669B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
JP6119667B2 (ja) 2013-06-11 2017-04-26 信越化学工業株式会社 下層膜材料及びパターン形成方法
WO2018029142A1 (en) 2016-08-09 2018-02-15 AZ Electronic Materials (Luxembourg) S.à.r.l. Enviromentally stable, thick film, chemically amplified resist
KR101977886B1 (ko) * 2018-06-18 2019-05-13 영창케미칼 주식회사 패턴 프로파일 개선용 화학증폭형 포지티브 포토레지스트 조성물

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
DE2829511A1 (de) * 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE3725741A1 (de) * 1987-08-04 1989-02-16 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch
JPH0480758A (ja) * 1990-07-23 1992-03-13 Fuji Photo Film Co Ltd 感光性組成物
US5364738A (en) * 1991-10-07 1994-11-15 Fuji Photo Film Co., Ltd. Light-sensitive composition

Also Published As

Publication number Publication date
US5939235A (en) 1999-08-17
EP0609684A1 (de) 1994-08-10
JPH06230574A (ja) 1994-08-19
EP0609684B1 (de) 2000-04-05
DE69423800D1 (de) 2000-05-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee