DE69327678D1 - Positiv arbeitende Resistzusammensetzung - Google Patents

Positiv arbeitende Resistzusammensetzung

Info

Publication number
DE69327678D1
DE69327678D1 DE69327678T DE69327678T DE69327678D1 DE 69327678 D1 DE69327678 D1 DE 69327678D1 DE 69327678 T DE69327678 T DE 69327678T DE 69327678 T DE69327678 T DE 69327678T DE 69327678 D1 DE69327678 D1 DE 69327678D1
Authority
DE
Germany
Prior art keywords
resist composition
positive working
working resist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69327678T
Other languages
English (en)
Other versions
DE69327678T2 (de
Inventor
Yasunori Uetani
Hiroshi Moriuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of DE69327678D1 publication Critical patent/DE69327678D1/de
Application granted granted Critical
Publication of DE69327678T2 publication Critical patent/DE69327678T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE69327678T 1992-02-25 1993-02-25 Positiv arbeitende Resistzusammensetzung Expired - Fee Related DE69327678T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03775092A JP3391471B2 (ja) 1992-02-25 1992-02-25 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
DE69327678D1 true DE69327678D1 (de) 2000-03-02
DE69327678T2 DE69327678T2 (de) 2000-09-07

Family

ID=12506155

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327678T Expired - Fee Related DE69327678T2 (de) 1992-02-25 1993-02-25 Positiv arbeitende Resistzusammensetzung

Country Status (8)

Country Link
US (1) US5424167A (de)
EP (1) EP0557991B1 (de)
JP (1) JP3391471B2 (de)
KR (1) KR100264691B1 (de)
CA (1) CA2089110A1 (de)
DE (1) DE69327678T2 (de)
MX (1) MX9300968A (de)
TW (1) TW430754B (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3329026B2 (ja) * 1993-10-19 2002-09-30 住友化学工業株式会社 ポジ型フォトレジスト組成物
JP3230925B2 (ja) * 1994-04-12 2001-11-19 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
WO1996022563A1 (fr) * 1995-01-17 1996-07-25 Nippon Zeon Co., Ltd. Composition de resist positif
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
US5514515A (en) * 1995-05-24 1996-05-07 Shipley Company, L.L.C. Photoactive compounds having a heterocyclic group used in photoresist compositions
US5618932A (en) * 1995-05-24 1997-04-08 Shipley Company, L.L.C. Photoactive compounds and compositions
JP3076523B2 (ja) * 1996-03-25 2000-08-14 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3796982B2 (ja) * 1998-06-02 2006-07-12 住友化学株式会社 ポジ型レジスト組成物
JP3945556B2 (ja) * 1998-12-17 2007-07-18 東京応化工業株式会社 液晶素子製造用ポジ型ホトレジスト塗布液及びそれを用いた基材
JP3931486B2 (ja) 1999-06-24 2007-06-13 住友化学株式会社 ポジ型レジスト組成物
US7052824B2 (en) * 2000-06-30 2006-05-30 E. I. Du Pont De Nemours And Company Process for thick film circuit patterning
WO2005007719A2 (en) 2003-07-16 2005-01-27 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition and method of forming resist pattern
KR101020164B1 (ko) 2003-07-17 2011-03-08 허니웰 인터내셔날 인코포레이티드 진보된 마이크로전자적 응용을 위한 평탄화 막, 및 이를제조하기 위한 장치 및 방법
US20050221222A1 (en) * 2004-03-22 2005-10-06 Canon Kabushiki Kaisha Photosensitive resin composition, resist pattern forming method, substrate processing method, and device manufacturing method
JP4678195B2 (ja) * 2005-02-03 2011-04-27 三菱瓦斯化学株式会社 フェナントレンキノン誘導体及びその製造方法
KR100725023B1 (ko) 2006-10-16 2007-06-07 제일모직주식회사 카도계 수지를 함유한 수지 조성물 및 그에 의한 패턴의 제조방법, 이를 이용한 컬러필터
KR101333698B1 (ko) 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
WO2011096273A1 (ja) * 2010-02-03 2011-08-11 Dic株式会社 フェノール樹脂組成物、その製造方法、硬化性樹脂組成物、その硬化物、及びプリント配線基板
KR101799396B1 (ko) 2010-05-18 2017-11-21 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법
CN102436142B (zh) 2010-09-29 2013-11-06 第一毛织株式会社 黑色光敏树脂组合物以及使用其的光阻层
KR101367253B1 (ko) 2010-10-13 2014-03-13 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR101486560B1 (ko) 2010-12-10 2015-01-27 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101453769B1 (ko) 2010-12-24 2014-10-22 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 컬러 필터
KR101344786B1 (ko) 2011-12-02 2013-12-26 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한　컬러필터
KR20140076320A (ko) 2012-12-12 2014-06-20 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 블랙 스페이서
CN110804173B (zh) * 2019-12-02 2022-07-22 珠海宏昌电子材料有限公司 聚苯醚中间体、聚苯醚衍生物及其制备方法和应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL247588A (de) * 1959-01-21
DE3039926A1 (de) * 1980-10-23 1982-05-27 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
DE3107109A1 (de) * 1981-02-26 1982-09-09 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
JPS58203434A (ja) * 1982-05-24 1983-11-26 Kanto Kagaku Kk ポジ型フオトレジスト組成物
DE3718416A1 (de) * 1987-06-02 1988-12-15 Hoechst Ag Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden, daraus hergestelltes aufzeichnungsmaterial und dessen verwendung
JP2629990B2 (ja) * 1989-12-20 1997-07-16 住友化学工業株式会社 ポジ型レジスト用組成物
TW202504B (de) * 1990-02-23 1993-03-21 Sumitomo Chemical Co
EP0445819B1 (de) * 1990-03-08 2001-08-22 Fuji Photo Film Co., Ltd. Positiv arbeitende Photolackzusammensetzung

Also Published As

Publication number Publication date
KR100264691B1 (ko) 2000-09-01
TW430754B (en) 2001-04-21
DE69327678T2 (de) 2000-09-07
MX9300968A (es) 1993-09-01
US5424167A (en) 1995-06-13
JPH05232697A (ja) 1993-09-10
EP0557991B1 (de) 2000-01-26
KR930018325A (ko) 1993-09-21
JP3391471B2 (ja) 2003-03-31
CA2089110A1 (en) 1993-08-26
EP0557991A1 (de) 1993-09-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee