MX9300968A - Composicion de capa protectora de tipo positiva. - Google Patents

Composicion de capa protectora de tipo positiva.

Info

Publication number
MX9300968A
MX9300968A MX9300968A MX9300968A MX9300968A MX 9300968 A MX9300968 A MX 9300968A MX 9300968 A MX9300968 A MX 9300968A MX 9300968 A MX9300968 A MX 9300968A MX 9300968 A MX9300968 A MX 9300968A
Authority
MX
Mexico
Prior art keywords
protective layer
layer composition
positive type
type protective
novolac resin
Prior art date
Application number
MX9300968A
Other languages
English (en)
Inventor
Yasunori Uetani
Hiroshi Moriuma
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of MX9300968A publication Critical patent/MX9300968A/es

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/22Exposing sequentially with the same light pattern different positions of the same surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)

Abstract

Una composición de capa protectora de tipo positivo que comprende una resina novolac soluble en álcali, un compuesto de quinondiazina que tiene un peso molecular, convertido a poliestireno, de 1,000 o inferior en la resina novolac soluble en álcali, sea de 25 o menor basado en el área del modelo total de la resina novolac, de la cual se exceptúa el área del modelo del compuesto de fenol no reactivo.
MX9300968A 1992-02-25 1993-02-23 Composicion de capa protectora de tipo positiva. MX9300968A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03775092A JP3391471B2 (ja) 1992-02-25 1992-02-25 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
MX9300968A true MX9300968A (es) 1993-09-01

Family

ID=12506155

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9300968A MX9300968A (es) 1992-02-25 1993-02-23 Composicion de capa protectora de tipo positiva.

Country Status (8)

Country Link
US (1) US5424167A (es)
EP (1) EP0557991B1 (es)
JP (1) JP3391471B2 (es)
KR (1) KR100264691B1 (es)
CA (1) CA2089110A1 (es)
DE (1) DE69327678T2 (es)
MX (1) MX9300968A (es)
TW (1) TW430754B (es)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3329026B2 (ja) * 1993-10-19 2002-09-30 住友化学工業株式会社 ポジ型フォトレジスト組成物
JP3230925B2 (ja) * 1994-04-12 2001-11-19 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
KR19980701463A (ko) * 1995-01-17 1998-05-15 나까노 가쓰히꼬 포지티브형 레지스트 조성물
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
US5618932A (en) * 1995-05-24 1997-04-08 Shipley Company, L.L.C. Photoactive compounds and compositions
US5514515A (en) * 1995-05-24 1996-05-07 Shipley Company, L.L.C. Photoactive compounds having a heterocyclic group used in photoresist compositions
JP3076523B2 (ja) * 1996-03-25 2000-08-14 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3796982B2 (ja) * 1998-06-02 2006-07-12 住友化学株式会社 ポジ型レジスト組成物
JP3945556B2 (ja) * 1998-12-17 2007-07-18 東京応化工業株式会社 液晶素子製造用ポジ型ホトレジスト塗布液及びそれを用いた基材
JP3931486B2 (ja) 1999-06-24 2007-06-13 住友化学株式会社 ポジ型レジスト組成物
US7052824B2 (en) * 2000-06-30 2006-05-30 E. I. Du Pont De Nemours And Company Process for thick film circuit patterning
US7462436B2 (en) 2003-07-16 2008-12-09 Tokyo Ohka Kogyo Co., Ltd. Positive photoresist composition and method of forming resist pattern
CN1802603A (zh) 2003-07-17 2006-07-12 霍尼韦尔国际公司 用于高级微电子应用的平面化薄膜及其生产装置和方法
US20050221222A1 (en) * 2004-03-22 2005-10-06 Canon Kabushiki Kaisha Photosensitive resin composition, resist pattern forming method, substrate processing method, and device manufacturing method
JP4678195B2 (ja) * 2005-02-03 2011-04-27 三菱瓦斯化学株式会社 フェナントレンキノン誘導体及びその製造方法
KR100725023B1 (ko) 2006-10-16 2007-06-07 제일모직주식회사 카도계 수지를 함유한 수지 조성물 및 그에 의한 패턴의 제조방법, 이를 이용한 컬러필터
KR101333698B1 (ko) 2009-11-10 2013-11-27 제일모직주식회사 포지티브형 감광성 수지 조성물
US8394911B2 (en) * 2010-02-03 2013-03-12 Dic Corporation Phenol resin composition, production method therefor, curable resin composition, cured product thereof, and printed circuit board
KR101799396B1 (ko) 2010-05-18 2017-11-21 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법
CN102436142B (zh) 2010-09-29 2013-11-06 第一毛织株式会社 黑色光敏树脂组合物以及使用其的光阻层
KR101367253B1 (ko) 2010-10-13 2014-03-13 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR101486560B1 (ko) 2010-12-10 2015-01-27 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 차광층
KR20120066923A (ko) 2010-12-15 2012-06-25 제일모직주식회사 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물
KR101423539B1 (ko) 2010-12-20 2014-07-25 삼성전자 주식회사 포지티브형 감광성 수지 조성물
KR101453769B1 (ko) 2010-12-24 2014-10-22 제일모직 주식회사 감광성 수지 조성물 및 이를 이용한 컬러 필터
KR101344786B1 (ko) 2011-12-02 2013-12-26 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
KR20140076320A (ko) 2012-12-12 2014-06-20 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 블랙 스페이서
CN110804173B (zh) * 2019-12-02 2022-07-22 珠海宏昌电子材料有限公司 聚苯醚中间体、聚苯醚衍生物及其制备方法和应用

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL247588A (es) * 1959-01-21
DE3039926A1 (de) * 1980-10-23 1982-05-27 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial
DE3107109A1 (de) * 1981-02-26 1982-09-09 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
JPS58203434A (ja) * 1982-05-24 1983-11-26 Kanto Kagaku Kk ポジ型フオトレジスト組成物
DE3718416A1 (de) * 1987-06-02 1988-12-15 Hoechst Ag Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden, daraus hergestelltes aufzeichnungsmaterial und dessen verwendung
JP2629990B2 (ja) * 1989-12-20 1997-07-16 住友化学工業株式会社 ポジ型レジスト用組成物
TW202504B (es) * 1990-02-23 1993-03-21 Sumitomo Chemical Co
DE69132694T2 (de) * 1990-03-08 2002-06-20 Fuji Photo Film Co., Ltd. Positiv arbeitende Photolackzusammensetzung

Also Published As

Publication number Publication date
DE69327678D1 (de) 2000-03-02
TW430754B (en) 2001-04-21
EP0557991A1 (en) 1993-09-01
KR930018325A (ko) 1993-09-21
EP0557991B1 (en) 2000-01-26
KR100264691B1 (ko) 2000-09-01
JPH05232697A (ja) 1993-09-10
JP3391471B2 (ja) 2003-03-31
CA2089110A1 (en) 1993-08-26
US5424167A (en) 1995-06-13
DE69327678T2 (de) 2000-09-07

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Legal Events

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FG Grant or registration
MM Annulment or lapse due to non-payment of fees