MX9300968A - Composicion de capa protectora de tipo positiva. - Google Patents
Composicion de capa protectora de tipo positiva.Info
- Publication number
- MX9300968A MX9300968A MX9300968A MX9300968A MX9300968A MX 9300968 A MX9300968 A MX 9300968A MX 9300968 A MX9300968 A MX 9300968A MX 9300968 A MX9300968 A MX 9300968A MX 9300968 A MX9300968 A MX 9300968A
- Authority
- MX
- Mexico
- Prior art keywords
- protective layer
- layer composition
- positive type
- type protective
- novolac resin
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
Abstract
Una composición de capa protectora de tipo positivo que comprende una resina novolac soluble en álcali, un compuesto de quinondiazina que tiene un peso molecular, convertido a poliestireno, de 1,000 o inferior en la resina novolac soluble en álcali, sea de 25 o menor basado en el área del modelo total de la resina novolac, de la cual se exceptúa el área del modelo del compuesto de fenol no reactivo.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03775092A JP3391471B2 (ja) | 1992-02-25 | 1992-02-25 | ポジ型レジスト組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX9300968A true MX9300968A (es) | 1993-09-01 |
Family
ID=12506155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX9300968A MX9300968A (es) | 1992-02-25 | 1993-02-23 | Composicion de capa protectora de tipo positiva. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5424167A (es) |
EP (1) | EP0557991B1 (es) |
JP (1) | JP3391471B2 (es) |
KR (1) | KR100264691B1 (es) |
CA (1) | CA2089110A1 (es) |
DE (1) | DE69327678T2 (es) |
MX (1) | MX9300968A (es) |
TW (1) | TW430754B (es) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3329026B2 (ja) * | 1993-10-19 | 2002-09-30 | 住友化学工業株式会社 | ポジ型フォトレジスト組成物 |
JP3230925B2 (ja) * | 1994-04-12 | 2001-11-19 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
KR19980701463A (ko) * | 1995-01-17 | 1998-05-15 | 나까노 가쓰히꼬 | 포지티브형 레지스트 조성물 |
JP3427562B2 (ja) * | 1995-05-09 | 2003-07-22 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
US5618932A (en) * | 1995-05-24 | 1997-04-08 | Shipley Company, L.L.C. | Photoactive compounds and compositions |
US5514515A (en) * | 1995-05-24 | 1996-05-07 | Shipley Company, L.L.C. | Photoactive compounds having a heterocyclic group used in photoresist compositions |
JP3076523B2 (ja) * | 1996-03-25 | 2000-08-14 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
JP3796982B2 (ja) * | 1998-06-02 | 2006-07-12 | 住友化学株式会社 | ポジ型レジスト組成物 |
JP3945556B2 (ja) * | 1998-12-17 | 2007-07-18 | 東京応化工業株式会社 | 液晶素子製造用ポジ型ホトレジスト塗布液及びそれを用いた基材 |
JP3931486B2 (ja) | 1999-06-24 | 2007-06-13 | 住友化学株式会社 | ポジ型レジスト組成物 |
US7052824B2 (en) * | 2000-06-30 | 2006-05-30 | E. I. Du Pont De Nemours And Company | Process for thick film circuit patterning |
US7462436B2 (en) | 2003-07-16 | 2008-12-09 | Tokyo Ohka Kogyo Co., Ltd. | Positive photoresist composition and method of forming resist pattern |
CN1802603A (zh) | 2003-07-17 | 2006-07-12 | 霍尼韦尔国际公司 | 用于高级微电子应用的平面化薄膜及其生产装置和方法 |
US20050221222A1 (en) * | 2004-03-22 | 2005-10-06 | Canon Kabushiki Kaisha | Photosensitive resin composition, resist pattern forming method, substrate processing method, and device manufacturing method |
JP4678195B2 (ja) * | 2005-02-03 | 2011-04-27 | 三菱瓦斯化学株式会社 | フェナントレンキノン誘導体及びその製造方法 |
KR100725023B1 (ko) | 2006-10-16 | 2007-06-07 | 제일모직주식회사 | 카도계 수지를 함유한 수지 조성물 및 그에 의한 패턴의 제조방법, 이를 이용한 컬러필터 |
KR101333698B1 (ko) | 2009-11-10 | 2013-11-27 | 제일모직주식회사 | 포지티브형 감광성 수지 조성물 |
US8394911B2 (en) * | 2010-02-03 | 2013-03-12 | Dic Corporation | Phenol resin composition, production method therefor, curable resin composition, cured product thereof, and printed circuit board |
KR101799396B1 (ko) | 2010-05-18 | 2017-11-21 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법 |
CN102436142B (zh) | 2010-09-29 | 2013-11-06 | 第一毛织株式会社 | 黑色光敏树脂组合物以及使用其的光阻层 |
KR101367253B1 (ko) | 2010-10-13 | 2014-03-13 | 제일모직 주식회사 | 감광성 수지 조성물 및 이를 이용한 차광층 |
KR101486560B1 (ko) | 2010-12-10 | 2015-01-27 | 제일모직 주식회사 | 감광성 수지 조성물 및 이를 이용한 차광층 |
KR20120066923A (ko) | 2010-12-15 | 2012-06-25 | 제일모직주식회사 | 신규 페놀 화합물 및 이를 포함하는 포지티브형 감광성 수지 조성물 |
KR101423539B1 (ko) | 2010-12-20 | 2014-07-25 | 삼성전자 주식회사 | 포지티브형 감광성 수지 조성물 |
KR101453769B1 (ko) | 2010-12-24 | 2014-10-22 | 제일모직 주식회사 | 감광성 수지 조성물 및 이를 이용한 컬러 필터 |
KR101344786B1 (ko) | 2011-12-02 | 2013-12-26 | 제일모직주식회사 | 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터 |
KR20140076320A (ko) | 2012-12-12 | 2014-06-20 | 제일모직주식회사 | 감광성 수지 조성물 및 이를 이용한 블랙 스페이서 |
CN110804173B (zh) * | 2019-12-02 | 2022-07-22 | 珠海宏昌电子材料有限公司 | 聚苯醚中间体、聚苯醚衍生物及其制备方法和应用 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL247588A (es) * | 1959-01-21 | |||
DE3039926A1 (de) * | 1980-10-23 | 1982-05-27 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial |
DE3107109A1 (de) * | 1981-02-26 | 1982-09-09 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial |
JPS58203434A (ja) * | 1982-05-24 | 1983-11-26 | Kanto Kagaku Kk | ポジ型フオトレジスト組成物 |
DE3718416A1 (de) * | 1987-06-02 | 1988-12-15 | Hoechst Ag | Lichtempfindliches gemisch auf basis von 1,2-naphthochinondiaziden, daraus hergestelltes aufzeichnungsmaterial und dessen verwendung |
JP2629990B2 (ja) * | 1989-12-20 | 1997-07-16 | 住友化学工業株式会社 | ポジ型レジスト用組成物 |
TW202504B (es) * | 1990-02-23 | 1993-03-21 | Sumitomo Chemical Co | |
DE69132694T2 (de) * | 1990-03-08 | 2002-06-20 | Fuji Photo Film Co., Ltd. | Positiv arbeitende Photolackzusammensetzung |
-
1992
- 1992-02-25 JP JP03775092A patent/JP3391471B2/ja not_active Expired - Fee Related
-
1993
- 1993-02-09 CA CA002089110A patent/CA2089110A1/en not_active Abandoned
- 1993-02-22 TW TW082101241A patent/TW430754B/zh not_active IP Right Cessation
- 1993-02-22 KR KR1019930002423A patent/KR100264691B1/ko not_active IP Right Cessation
- 1993-02-23 MX MX9300968A patent/MX9300968A/es not_active IP Right Cessation
- 1993-02-25 EP EP93102960A patent/EP0557991B1/en not_active Expired - Lifetime
- 1993-02-25 DE DE69327678T patent/DE69327678T2/de not_active Expired - Fee Related
- 1993-02-25 US US08/022,488 patent/US5424167A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69327678D1 (de) | 2000-03-02 |
TW430754B (en) | 2001-04-21 |
EP0557991A1 (en) | 1993-09-01 |
KR930018325A (ko) | 1993-09-21 |
EP0557991B1 (en) | 2000-01-26 |
KR100264691B1 (ko) | 2000-09-01 |
JPH05232697A (ja) | 1993-09-10 |
JP3391471B2 (ja) | 2003-03-31 |
CA2089110A1 (en) | 1993-08-26 |
US5424167A (en) | 1995-06-13 |
DE69327678T2 (de) | 2000-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG | Grant or registration | ||
MM | Annulment or lapse due to non-payment of fees |